Thermal treatment of silicon integrated circuit chips to prevent and heal voids in aluminum metallization

Claim 1

A method of preventing voids, or healing such voids once they have developed, in aluminum metallization conductor lines of micron widths and thicknesses on a silicon integrated circuit chip upon subjecting said chip to thermal treatment upon depositing said aluminum metallization conductor lines, and at any time thereafter, comprising the steps of subjecting said chip to thermal treatment for a period sufficient to allow diffusion of silicon into voids of aluminum metallization conductor lines and then rapidly cooling said chip at a rate sufficient to prevent precipitation of silicon from said aluminum metallization conductor lines by quickly immersing said chip in a volume of liquid nitrogen at a temperature sufficiently below 25° C. to provide said sufficient cooling rate, wherein said inert liquid is nitrogen, and the temperature of said thermal treatment is in the range between 200° C. and 400° C.

Claim 2

A method of preventing voids, or healing such voids once they have developed, in aluminum metallization conductor lines of micron widths and thicknesses on a silicon integrated circuit chip upon subjecting said chip to thermal treatment upon depositing said aluminum metallization conductor lines, and at any time thereafter, comprising the steps of subjecting said chip to thermal treatment for a period sufficient to allow diffusion of silicon into voids of aluminum metallization conductor lines and then rapidly cooling said chip at a rate sufficient to prevent precipitation of silicon from said aluminum metallization conductor lines by quickly immersing said chip in a volume of liquid nitrogen at a temperature sufficiently below 25° C. to provide said sufficient cooling rate, wherein said inert liquid is nitrogen, and the temperature of said thermal treatment is in the range between 200° C. and 400° C.

Claim 4

A method of preventing voids in aluminum metallization conductor lines on an integrated circuit chip during a manufacturing process which involves subjecting said chip to a high temperature in the range between 300° C. and 400° C. for a period sufficient to allow diffusion of silicon into voids of aluminum metallization conductor lines having micron widths and thicknesses, comprising the step of quenching said chip in a volume of inert liquid at a temperature sufficiently below 25° C. to cool said chip at a rate which prevents precipitation of silicon from said aluminum metallization conductor lines, and said inert liquid is liquid nitrogen.

Claim 5

A method of preventing voids in aluminum metallization conductor lines on an integrated circuit chip during a manufacturing process which involves subjecting said chip to a high temperature in the range between 300° C. and 400° C. for a period sufficient to allow diffusion of silicon into voids of aluminum metallization conductor lines having micron widths and thicknesses, comprising the step of quenching said chip in a volume of inert liquid at a temperature sufficiently below 25° C. to cool said chip at a rate which prevents precipitation of silicon from said aluminum metallization conductor lines, and said inert liquid is liquid nitrogen.

Claim 6

A method of healing voids in aluminum metallization conductor lines on an integrated circuit chip comprising the steps of heating said chip to a temperature in the range of 200°C. to 400° C. for a period sufficiently long for diffusion of silicon into voids of said aluminum metallization conductor lines, and quenching said chip in a volume of inert liquid at a temperature sufficiently below 25° C. to cool said chip at a rate sufficiently high to prevent precipitation of silicon from the aluminum metallization, and said inert liquid is liquid nitrogen, thus healing said voids with an internal equilibrium distribution of Al/Si alloy in said voids.

Claim 7

A method of healing voids in aluminum metallization conductor lines on an integrated circuit chip comprising the steps of heating said chip to a temperature in the range of 200°C. to 400° C. for a period sufficiently long for diffusion of silicon into voids of said aluminum metallization conductor lines, and quenching said chip in a volume of inert liquid at a temperature sufficiently below 25° C. to cool said chip at a rate sufficiently high to prevent precipitation of silicon from the aluminum metallization, and said inert liquid is liquid nitrogen, thus healing said voids with an internal equilibrium distribution of Al/Si alloy in said voids.