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US5587593A
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Light-emitting semiconductor device using group III nitrogen compound
Assignee: Japan Science and Technology Agency
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Filing: 1995-04-19
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Granted: 1996-12-24
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Expires: 2015-04-19
Abstract
Abstract A light-emitting semiconductor device includes a sapphire substrate whose main surface orientation is tilted by 1 to 4 degrees from its axis "a" <1120>, and layers epitaxially formed thereon. Tilting the surface orientation of the sapphire substrate enables uniform doping of a p-type impurity into the layers epitaxially grown thereon. As a result, the luminous intensity of the light-emitting semiconductor device is improved.
Inventors
- 👤 Norikatsu Koide
- 👤 Shiro Yamazaki
- 👤 Junichi Umezaki
- 👤 Shinya Asami
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 23:37
CPC Classifications
H; H10; H10H; H10H20/00; H10H20/80; H10H20/81; H10H20/822; H10H20/824; H10H20/825; H10H20/8252; H10H20/817
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
94 words
A light-emitting semiconductor device comprising: a sapphire substrate; an n-layer with n-type conduction of group III nitride compound semiconductor satisfying the formula Al x Ga y In 1-x-y N, 0 ≦x≦1 0≦x≦1, and 0≦x+y≦1; a magnesium (Mg) doped p-layer with p-type conduction of group III nitride compound semiconductor satisfying the formula Al x Ga y In 1-x-y N, 0≦x≦1, 0≦y≦1, and 0≦x+y≦1; and wherein a plane orientation of said sapphire substrate is set at an off angle within the range of 1 to 4 degrees from an axis "a" <1120> of said sapphire substrate.
Claim 2
Dependent Claim
94 words
A light-emitting semiconductor device comprising: a sapphire substrate; an n-layer with n-type conduction of group III nitride compound semiconductor satisfying the formula Al x Ga y In 1-x-y N, 0 ≦x≦1 0≦x≦1, and 0≦x+y≦1; a magnesium (Mg) doped p-layer with p-type conduction of group III nitride compound semiconductor satisfying the formula Al x Ga y In 1-x-y N, 0≦x≦1, 0≦y≦1, and 0≦x+y≦1; and wherein a plane orientation of said sapphire substrate is set at an off angle within the range of 1 to 4 degrees from an axis "a" <1120> of said sapphire substrate.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1999-12-24 | 2000-06-24 | 2000-12-24 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2003-12-24 | 2004-06-24 | 2004-12-24 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2007-12-24 | 2008-06-24 | 2008-12-24 | $7700.00 | Window Closed / Lapsed |