US5237182A
Expired / Lapsed
US
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Electroluminescent device of compound semiconductor with buffer layer
Assignee: Sharp Corp
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Filing: 1991-11-26
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Granted: 1993-08-17
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Expires: 2011-11-26
Abstract
Abstract An electroluminescent device of compound semiconductor including a semiconductor substrate, a buffer layer epitaxially grown on the semiconductor substrate and a luminescent layer epitaxially grown on the buffer layer, the substrate being formed from a single crystal of zinc sulfide, zinc selenide or a mixed crystal thereof, the luminescent layer being formed from aluminum nitride, indium nitride, gallium nitride or a mixed crystal of at least two of the nitrides.
Inventors
- 👤 Masahiko Kitagawa
- 👤 Yoshitaka Tomomura
- 👤 Kenji Nakanishi
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-27 06:59
CPC Classifications
H; H10; H10H; H10H20/00; H10H20/80; H10H20/81; H10H20/822; H10H20/823; H10H20/01; H10H20/011; H10H20/012; H10H20/0125; H10H20/013; H10H20/0133; H10H20/01335; H10H20/8232; H10H20/824; H10H20/825
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
70 words
An electroluminescent device of compound semiconductor comprising a semiconductor substrate, a buffer layer epitaxially grown on said semiconductor substrate and a luminescent layer epitaxially grown on said buffer layer, said substrate being formed from a single crystal of zinc sulfide, zinc selenide or a mixed crystal thereof, said luminescent layer being formed from aluminum nitride, indium nitride, gallium nitride or a mixed crystal of at least two of said nitrides.
Claim 2
Dependent Claim
70 words
An electroluminescent device of compound semiconductor comprising a semiconductor substrate, a buffer layer epitaxially grown on said semiconductor substrate and a luminescent layer epitaxially grown on said buffer layer, said substrate being formed from a single crystal of zinc sulfide, zinc selenide or a mixed crystal thereof, said luminescent layer being formed from aluminum nitride, indium nitride, gallium nitride or a mixed crystal of at least two of said nitrides.
Claim 3
Dependent Claim
28 words
A device as set forth in claim 1, wherein said buffer layer is formed from a compound represented by the ZnS 1-x O x where x satisfies 0≦x<1.
Claim 4
Dependent Claim
29 words
A device as set forth in claim 2, wherein x varies from 0 to 1 as said buffer layer grows from the substrate side to the luminescent layer side.
Claim 5
Dependent Claim
24 words
A device as set forth in claim 2, wherein said buffer layer comprises a superlattice layer having interlacedly stacked layers of ZnO and ZnS.
Claim 6
Dependent Claim
23 words
A device as set forth in claim 2, wherein a ZnO layer is interposed between s id buffer layer and said luminescent layer.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1996-08-16 | 1997-02-15 | 1997-08-17 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2000-08-16 | 2001-02-15 | 2001-08-17 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2004-08-16 | 2005-02-15 | 2005-08-17 | $7700.00 | Window Closed / Lapsed |