EP0357458A2
Expired / Lapsed
EP
⏱️ 0.0 years remaining
Luminescent device
Assignee: Sharp Corp
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Filing: 1989-09-01
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Granted: —
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Expires: 2009-09-01
Abstract
Abstract A compound semiconductor luminescent device comprises a semiconductor substrate (11) and a multi-layered structure disposed on the substrate, the multi-layered structure comprising at least one conductive layer (12), a luminescent layer (13), and a current injection layer (14), wherein the substrate and the layers are made of at least one type of II-VI group compound semiconductor.
Inventors
- 👤 Masahiko Kitagawa
- 👤 Yoshitaka Tomomura
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-10-28 00:25
CPC Classifications
H; H10; H10H; H10H20/00; H10H20/80; H10H20/84; H01; H01S; H01S5/00; H01S5/30; H01S5/32; H01S5/327; H05; H05B; H05B33/00; H05B33/12; H05B33/14; H05B33/145; H10H20/052; H10H20/81; H10H20/822; H10H20/823; H10H20/8232; H10H20/816
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
52 words
A compound semiconductor luminescent device comprising a semiconductor substrate and a multi-layered structure disposed on the substrate, the multi-layered structure comprising at least one conductive layer, a luminescent layer, and a current injection layer, wherein the substrate and the layers are made of at least one type of II-VI group compound semiconductor.
Claim 2
Dependent Claim
52 words
A compound semiconductor luminescent device comprising a semiconductor substrate and a multi-layered structure disposed on the substrate, the multi-layered structure comprising at least one conductive layer, a luminescent layer, and a current injection layer, wherein the substrate and the layers are made of at least one type of II-VI group compound semiconductor.
Claim 3
Dependent Claim
30 words
A compound semiconductor luminescent device according to claim 1, wherein the luminescent layer is formed on the conductive layer and the current injection layer is formed on the luminescent layer.
Claim 4
Dependent Claim
31 words
A compound semiconductor luminescent device according to claim 1, wheren the current injection layer is formed on the conductive layer and the luminescent layer is formed on the current injection layer.
Claim 5
Dependent Claim
21 words
A compound semiconductor luminescent device according to claim 1 or 2, further comprising a protective layer disposed on the multi-layered structure.
Claim 6
Dependent Claim
43 words
A compound semiconductor luminescent device according to any of claims 1 to 4, wherein the II-VI group compound semiconductor is selected from ZnS, ZnSe, ZnS x Se 1-x (0 < x ≦ 1), and ZnS y Te 1-y (0 ≦ y < 1).
References Cited (Backward Citations)
No citation records indexed.
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