Luminous element

Abstract

Abstract PURPOSE: To facilitate production by providing a grade layer, an n-type clad layer, an active layer and a p-type clad layer on a GaAs or GaP substrate in the ternary system by the vapour-phase growing method and fitting ohmic electrodes. CONSTITUTION: N-type GaAs 1-x P x 22, Se-added n-type GaAs 0.6 P 0.4 23, Zn-added p-type GaAs 0.7 P 0.3 active layer 24 and Zn-added P-type GaAs 0.6 P 0.4 25 are laminated on n-type GaAs substrate 21 while changing the x value linearly from 0 to 0.4 in the growing direction, and ohmic electrodes 27 and 26 of Au-Ge (10%) and Au-Be (1%) are fitted onto substrate 21 and layer 25. The range of x of the active layer is selected as 0.2<x≤0.4 and 0.4<x<0.9 for the GaAs substrate and the GaP substrate respectively, and the energy gap of clad layers 23 and 25 is selected to be larger than the active layer by a value over 10 2 meV. Thus, a luminius device for visual rays can be obtained easily. COPYRIGHT: (C)1979,JPO&Japio

Inventors

• 👤 Isamu Akasaki
• 👤 Masafumi Hashimoto
• 👤 Masaaki Oshima

Bibliographic Details