Patent US5581110A successfully refreshed from Google Patents.
US5581110A
Expired / Lapsed
US
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Integrated circuit with trenches and an oxygen barrier layer
Assignee: National Semiconductor Corp
•
Filing: 1995-08-17
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Granted: 1996-12-03
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Expires: 2015-08-17
Abstract
Abstract A trench which has walls intersecting a surface of a semiconductor substrate and an oxidation/diffusion barrier layer lining the walls is disclosed. The oxidation/diffusion barrier extends over the edges of the trench to prevent, for example, stress defects in the trench corners and vertical bird's beak formation within the trench. A filler material such as polysilicon is deposited within the trench followed by the deposition of a planarizing layer over the trench. After heat is applied, the planarizing layer flows to form a planarized layer over the trench. Using high pressure and phosphosilicate glass for the planarizing layer, the planarizing layer flows appropriately at low temperatures for short times.
Inventors
- 👤 Reda R. Razouk
- 👤 Kulwant S. Egan
- 👤 Wipawan Yindeepol
- 👤 Waclaw C. Koscielniak
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-02 19:56
CPC Classifications
H; H10; H10D; H10D1/00; H10D1/01; H10D1/045; H10D1/047; H10P; H10P90/00; H10P90/19; H10P90/1904; H10P90/1906; H10P95/00; H10W; H10W10/00; H10W10/01; H10W10/011; H10W10/014; H10W10/061; H10W10/10; H10W10/17; H10W10/181; H10P90/1914; H10W10/041; H10W10/40
Claims Analysis
Total Claims: 56
Claim 1
Independent Claim
114 words
An integrated circuit body comprising: an orifice disposed in the body, the orifice having a wall intersecting a surface of the body to form a corner; an oxygen diffusion barrier entirely lining the orifice wall, extending from the orifice onto the surface, and terminating proximate to the corner to overlap the corner; fill material disposed in the orifice; a layer of dielectric material disposed over the surface of the body, over the orifice, and over the extending portion of the oxygen diffusion barrier; and a second oxygen diffusion barrier disposed on the fill material and on the extending portion of the oxygen diffusion barrier and interposed between the fill material and the dielectric material.
Claim 2
Dependent Claim
114 words
An integrated circuit body comprising: an orifice disposed in the body, the orifice having a wall intersecting a surface of the body to form a corner; an oxygen diffusion barrier entirely lining the orifice wall, extending from the orifice onto the surface, and terminating proximate to the corner to overlap the corner; fill material disposed in the orifice; a layer of dielectric material disposed over the surface of the body, over the orifice, and over the extending portion of the oxygen diffusion barrier; and a second oxygen diffusion barrier disposed on the fill material and on the extending portion of the oxygen diffusion barrier and interposed between the fill material and the dielectric material.
Claim 3
Dependent Claim
33 words
An integrated circuit body as in claim 1, wherein the oxygen diffusion barrier is disposed on the wall of the orifice and the fill material is disposed inside of the oxygen diffusion barrier.
Claim 4
Dependent Claim
50 words
An integrated circuit body as in claim 1, wherein the integrated circuit body is silicon, the oxygen diffusion barrier is silicon nitride, the wall of the orifice is silicon dioxide, the fill material is polysilicon, and the dielectric material is reflowed phosphosilicate glass having a 6 percent concentration of phosphorus.
Claim 5
Dependent Claim
106 words
A semiconductor body comprising: a trench disposed in the semiconductor body, the trench having a side wall intersecting a surface of the semiconductor, wherein the semiconductor body includes a surface region contiguous to the side wall; a stress relief layer disposed entirely over the side wall and over the semiconductor body contiguous surface region; an oxygen diffusion barrier disposed entirely over the stress relief layer and terminating over the semiconductor body contiguous surface region; a trench fill material disposed in the trench; and a layer of flowed planarization material disposed over the surface of the semiconductor body, over the trench, and over the oxygen diffusion barrier.
Claim 6
Dependent Claim
106 words
A semiconductor body comprising: a trench disposed in the semiconductor body, the trench having a side wall intersecting a surface of the semiconductor, wherein the semiconductor body includes a surface region contiguous to the side wall; a stress relief layer disposed entirely over the side wall and over the semiconductor body contiguous surface region; an oxygen diffusion barrier disposed entirely over the stress relief layer and terminating over the semiconductor body contiguous surface region; a trench fill material disposed in the trench; and a layer of flowed planarization material disposed over the surface of the semiconductor body, over the trench, and over the oxygen diffusion barrier.
Claim 7
Dependent Claim
15 words
A semiconductor body as in claim 4, wherein the stress relief layer is silicon dioxide.
Claim 8
Dependent Claim
55 words
An integrated circuit body as in claim 1 wherein the orifice includes a second wall intersecting the surface of the body to form a second corner, the oxygen diffusion barrier having a second portion extending from the orifice and onto the second surface to overlap the second corner and terminating proximate to the second corner.
Claim 9
Dependent Claim
101 words
An integrated circuit body comprising: an orifice disposed in the body, the orifice having a wall intersecting a surface of the body to form a corner; an oxygen diffusion barrier entirely lining the orifice wall, extending from the orifice onto the surface, and terminating proximate to the corner to overlap the corner; fill material disposed in the orifice; and a layer of dielectric material disposed over the surface of the body, over the orifice, and over the extending portion of the oxygen diffusion barrier, wherein the extending portion of the oxygen diffusion barrier has a lateral dimension of about 1 μm.
Claim 10
Dependent Claim
101 words
An integrated circuit body comprising: an orifice disposed in the body, the orifice having a wall intersecting a surface of the body to form a corner; an oxygen diffusion barrier entirely lining the orifice wall, extending from the orifice onto the surface, and terminating proximate to the corner to overlap the corner; fill material disposed in the orifice; and a layer of dielectric material disposed over the surface of the body, over the orifice, and over the extending portion of the oxygen diffusion barrier, wherein the extending portion of the oxygen diffusion barrier has a lateral dimension of about 1 μm.
Claim 11
Dependent Claim
46 words
An integrated circuit body as in claim 1 wherein the fill material includes a surface facing away from an interior of the body, and the layer of dielectric material is disposed on the extending portion of the oxygen diffusion barrier and on the fill material surface.
Claim 12
Dependent Claim
31 words
A semiconductor body as in claim 4 wherein the portion of the oxygen diffusion barrier disposed over the semiconductor body contiguous surface region has a lateral dimension of about 1 μm.
Claim 13
Dependent Claim
114 words
An integrated circuit body comprising: an orifice disposed in the body, the orifice having a wall intersecting a surface of the body to form a corner; an oxygen diffusion barrier entirely lining the orifice wall, extending from the orifice onto the surface, and terminating proximate to the corner to overlap the corner; fill material disposed in the orifice; a layer of dielectric material disposed over the surface of the body, over the orifice, and over the extending portion of the oxygen diffusion barrier; and a second oxygen diffusion barrier disposed on the fill material and on the extending portions of the oxygen diffusion barrier and interposed between the fill material and the dielectric material.
Claim 14
Dependent Claim
114 words
An integrated circuit body comprising: an orifice disposed in the body, the orifice having a wall intersecting a surface of the body to form a corner; an oxygen diffusion barrier entirely lining the orifice wall, extending from the orifice onto the surface, and terminating proximate to the corner to overlap the corner; fill material disposed in the orifice; a layer of dielectric material disposed over the surface of the body, over the orifice, and over the extending portion of the oxygen diffusion barrier; and a second oxygen diffusion barrier disposed on the fill material and on the extending portions of the oxygen diffusion barrier and interposed between the fill material and the dielectric material.
Claim 15
Dependent Claim
161 words
A semiconductor body comprising: a trench disposed in the semiconductor body, the trench having a side wall intersecting a surface of the semiconductor, wherein the semiconductor body includes a surface region contiguous to the side wall; a stress relief layer disposed over the side wall and over the semiconductor body contiguous surface region; a first silicon nitride layer having a side wall portion disposed on the stress relief layer within the trench and an overlap portion disposed on the stress relief layer, the overlap portion terminating over the semiconductor body contiguous surface region; a trench fill material disposed on the first silicon nitride side wall portion and filling the trench, the trench fill material having a crest surface adjacent to the first silicon nitride overlap portion; a second silicon nitride layer disposed on the first silicon nitride overlap portion and on the trench fill material crest surface; and a layer of flowed planarization material disposed on the second silicon nitride layer.
Claim 16
Dependent Claim
161 words
A semiconductor body comprising: a trench disposed in the semiconductor body, the trench having a side wall intersecting a surface of the semiconductor, wherein the semiconductor body includes a surface region contiguous to the side wall; a stress relief layer disposed over the side wall and over the semiconductor body contiguous surface region; a first silicon nitride layer having a side wall portion disposed on the stress relief layer within the trench and an overlap portion disposed on the stress relief layer, the overlap portion terminating over the semiconductor body contiguous surface region; a trench fill material disposed on the first silicon nitride side wall portion and filling the trench, the trench fill material having a crest surface adjacent to the first silicon nitride overlap portion; a second silicon nitride layer disposed on the first silicon nitride overlap portion and on the trench fill material crest surface; and a layer of flowed planarization material disposed on the second silicon nitride layer.
Claim 17
Dependent Claim
22 words
The semiconductor body of claim 11 wherein the first silicon nitride layer overlap portion has a lateral dimension of about 1 μm.
Claim 18
Dependent Claim
194 words
An integrated circuit body comprising: a groove disposed in the body, the groove having a wall intersecting a surface of the body; a pad oxide formed on the wall of the groove and on a surface region of the body contiguous with the groove; a first silicon nitride layer formed on the pad oxide to cover the pad oxide within the groove and extending from the groove to cover at least a portion of the pad oxide external to the groove, the first silicon nitride layer terminating over the surface region of the body contiguous with the groove; a polysilicon layer formed within the groove on the first silicon nitride layer to fill the groove and having a surface facing outwardly from the groove; a layer of dielectric material disposed over the first silicon nitride layer and the polysilicon layer; and a second silicon nitride layer formed on the first silicon nitride layer extending from the groove and on the polysilicon layer surface, the second silicon nitride layer terminating over the surface region of the body contiguous with the groove; wherein the layer of dielectric material is disposed on the second silicon nitride layer.
Claim 19
Dependent Claim
194 words
An integrated circuit body comprising: a groove disposed in the body, the groove having a wall intersecting a surface of the body; a pad oxide formed on the wall of the groove and on a surface region of the body contiguous with the groove; a first silicon nitride layer formed on the pad oxide to cover the pad oxide within the groove and extending from the groove to cover at least a portion of the pad oxide external to the groove, the first silicon nitride layer terminating over the surface region of the body contiguous with the groove; a polysilicon layer formed within the groove on the first silicon nitride layer to fill the groove and having a surface facing outwardly from the groove; a layer of dielectric material disposed over the first silicon nitride layer and the polysilicon layer; and a second silicon nitride layer formed on the first silicon nitride layer extending from the groove and on the polysilicon layer surface, the second silicon nitride layer terminating over the surface region of the body contiguous with the groove; wherein the layer of dielectric material is disposed on the second silicon nitride layer.
Claim 20
Dependent Claim
164 words
An integrated circuit body comprising: a groove disposed in the body, the groove having a wall intersecting a surface of the body; a pad oxide formed on the wall of the groove and on a surface region of the body contiguous with the groove; a first silicon nitride layer formed on the pad oxide to cover the pad oxide within the groove and extending from the groove to cover at least a portion of the pad oxide external to the groove, the first silicon nitride layer terminating over the surface region of the body contiguous with the groove; a polysilicon layer formed within the groove on the first silicon nitride layer to fill the groove and having a surface facing outwardly from the groove; a layer of dielectric material disposed over the first silicon nitride layer and the polysilicon layer; and wherein the first silicon nitride layer terminates about 1 μm from the intersection of the groove wall and the surface of the body.
Claim 21
Dependent Claim
164 words
An integrated circuit body comprising: a groove disposed in the body, the groove having a wall intersecting a surface of the body; a pad oxide formed on the wall of the groove and on a surface region of the body contiguous with the groove; a first silicon nitride layer formed on the pad oxide to cover the pad oxide within the groove and extending from the groove to cover at least a portion of the pad oxide external to the groove, the first silicon nitride layer terminating over the surface region of the body contiguous with the groove; a polysilicon layer formed within the groove on the first silicon nitride layer to fill the groove and having a surface facing outwardly from the groove; a layer of dielectric material disposed over the first silicon nitride layer and the polysilicon layer; and wherein the first silicon nitride layer terminates about 1 μm from the intersection of the groove wall and the surface of the body.
Claim 22
Dependent Claim
33 words
An integrated circuit body as in claim 13 wherein the first and second silicon nitride layers terminate about 1 μm from the intersection of the groove wall and the surface of the body.
Claim 23
Dependent Claim
105 words
A semiconductor body comprising: a trench disposed in the semiconductor body, the trench having a side wall intersecting a surface of the semiconductor; a first continuous oxygen diffusion barrier entirely lining the trench side wall and terminating on the semiconductor surface proximate to the intersection of the semiconductor surface and the trench side wall; a trench fill material disposed on the first oxygen diffusion barrier within the trench and filling the trench, the trench fill material having an exposed top surface; and a layer of flowed planarization material over the surface of the semiconductor body, over the trench, and over the first oxygen diffusion barrier.
Claim 24
Dependent Claim
105 words
A semiconductor body comprising: a trench disposed in the semiconductor body, the trench having a side wall intersecting a surface of the semiconductor; a first continuous oxygen diffusion barrier entirely lining the trench side wall and terminating on the semiconductor surface proximate to the intersection of the semiconductor surface and the trench side wall; a trench fill material disposed on the first oxygen diffusion barrier within the trench and filling the trench, the trench fill material having an exposed top surface; and a layer of flowed planarization material over the surface of the semiconductor body, over the trench, and over the first oxygen diffusion barrier.
Claim 25
Dependent Claim
37 words
The semiconductor body of claim 16 further comprising: a second continuous oxygen diffusion barrier disposed on the first continuous oxygen diffusion barrier over the semiconductor surface and on the exposed top surface of the trench fill material.
Claim 26
Dependent Claim
50 words
A semiconductor body as in claim 16, wherein the semiconductor body is silicon, the oxygen diffusion barrier is silicon nitride, the side wall of the trench is silicon dioxide, the trench fill material is polysilicon, and the dielectric material is reflowed phosphosilicate glass having a 6 percent concentration of phosphorus.
Claim 27
Dependent Claim
33 words
The semiconductor body of claim 16 wherein the layer of flowed planarization material is disposed on the first continuous oxygen diffusion barrier and on the exposed top surface of the trench fill material.
Claim 28
Dependent Claim
104 words
An integrated circuit body comprising: an orifice disposed in the body, the orifice having a wall intersecting a surface of the body to form a corner; a first oxygen diffusion barrier having a portion extending from the orifice and onto the surface to overlap the corner; fill material disposed in the orifice; a second oxygen diffusion barrier disposed over the fill material and interposed between the fill material and the dielectric material; and a layer of dielectric material disposed over the surface of the body, over the orifice, over the extending portion of the first oxygen diffusion barrier, and over the second oxygen barrier.
Claim 29
Dependent Claim
104 words
An integrated circuit body comprising: an orifice disposed in the body, the orifice having a wall intersecting a surface of the body to form a corner; a first oxygen diffusion barrier having a portion extending from the orifice and onto the surface to overlap the corner; fill material disposed in the orifice; a second oxygen diffusion barrier disposed over the fill material and interposed between the fill material and the dielectric material; and a layer of dielectric material disposed over the surface of the body, over the orifice, over the extending portion of the first oxygen diffusion barrier, and over the second oxygen barrier.
Claim 30
Dependent Claim
33 words
An integrated circuit body as in claim 7, wherein the oxygen diffusion barrier is disposed on the wall of the orifice and the fill material is disposed inside of the oxygen diffusion barrier.
Claim 31
Dependent Claim
50 words
An integrated circuit body as in claim 7, wherein the integrated circuit body is silicon, the oxygen diffusion barrier is silicon nitride, the wall of the orifice is silicon dioxide, the fill material is polysilicon, and the dielectric material is reflowed phosphosilicate glass having a 6 percent concentration of phosphorus.
Claim 32
Dependent Claim
40 words
An integrated circuit body as in claim 7, further comprising: a second oxygen diffusion barrier disposed on the fill material and on the extending portion of the oxygen diffusion barrier and interposed between the fill material and the dielectric material.
Claim 33
Dependent Claim
55 words
An integrated circuit body as in claim 7 wherein the orifice includes a second wall intersecting the surface of the body to form a second corner, the oxygen diffusion barrier having a second portion extending from the orifice and onto the second surface to overlap the second corner and terminating proximate to the second corner.
Claim 34
Dependent Claim
46 words
An integrated circuit body as in claim 7 wherein the fill material includes a surface facing away from an interior of the body, and the layer of dielectric material is disposed on the extending portion of the oxygen diffusion barrier and on the fill material surface.
Claim 35
Dependent Claim
40 words
An integrated circuit body as in claim 7, further comprising: a second oxygen diffusion barrier disposed on the fill material and on the extending portions of the oxygen diffusion barrier and interposed between the fill material and the dielectric material.
Claim 36
Dependent Claim
33 words
An integrated circuit body as in claim 10, wherein the oxygen diffusion barrier is disposed on the wall of the orifice and the fill material is disposed inside of the oxygen diffusion barrier.
Claim 37
Dependent Claim
50 words
An integrated circuit body as in claim 10, wherein the integrated circuit body is silicon, the oxygen diffusion barrier is silicon nitride, the wall of the orifice is silicon dioxide, the fill material is polysilicon, and the dielectric material is reflowed phosphosilicate glass having a 6 percent concentration of phosphorus.
Claim 38
Dependent Claim
40 words
An integrated circuit body as in claim 10, further comprising: a second oxygen diffusion barrier disposed on the fill material and on the extending portion of the oxygen diffusion barrier and interposed between the fill material and the dielectric material.
Claim 39
Dependent Claim
55 words
An integrated circuit body as in claim 10 wherein the orifice includes a second wall intersecting the surface of the body to form a second corner, the oxygen diffusion barrier having a second portion extending from the orifice and onto the second surface to overlap the second corner and terminating proximate to the second corner.
Claim 40
Dependent Claim
46 words
An integrated circuit body as in claim 10 wherein the fill material includes a surface facing away from an interior of the body, and the layer of dielectric material is disposed on the extending portion of the oxygen diffusion barrier and on the fill material surface.
Claim 41
Dependent Claim
31 words
An integrated circuit body as in claim 13 wherein the first silicon nitride layer terminates about 1 μm from the intersection of the groove wall and the surface of the body.
Claim 42
Dependent Claim
44 words
A semiconductor body as in claim 4, wherein the semiconductor body includes silicon, the oxygen diffusion barrier is silicon nitride, the fill material is polysilicon, and the planarization material is a dielectric material of reflowed phosphosilicate glass having a 6 percent concentration of phosphorus.
Claim 43
Dependent Claim
13 words
A semiconductor body as in claim 4, wherein the semiconductor body includes silicon.
Claim 44
Dependent Claim
15 words
A semiconductor body as in claim 4, wherein the oxygen diffusion barrier is silicon nitride.
Claim 45
Dependent Claim
32 words
A semiconductor body as in claim 4, wherein the fill material is polysilicon, and the planarization material is a dielectric material of reflowed phosphosilicate glass having a 6 percent concentration of phosphorus.
Claim 46
Dependent Claim
27 words
A semiconductor body as in claim 4, further comprising: a second oxygen diffusion barrier disposed over the fill material and over the semiconductor body contiguous surface region.
Claim 47
Dependent Claim
48 words
A semiconductor body as in claim 4, wherein the fill material includes a surface facing away from an interior of the body, and the layer of planarization material is disposed on the oxygen diffusion barrier over the semiconductor body contiguous surface region and on the fill material surface.
Claim 48
Dependent Claim
33 words
A semiconductor body as in claim 4, further comprising: a second oxygen diffusion barrier disposed over the fill material and on the oxygen diffusion barrier portion over the semiconductor body contiguous surface region.
Claim 49
Dependent Claim
17 words
A semiconductor body as in claim 4, further comprising: integrated circuit elements disposed in the semiconductor body.
Claim 50
Dependent Claim
29 words
The semiconductor body of claim 11 wherein the layer of flowed planarization material is is a dielectric material of reflowed phosphosilicate glass having a 6 percent concentration of phosphorus.
Claim 51
Dependent Claim
17 words
A semiconductor body as in claim 16, further comprising: integrated circuit elements disposed in the semiconductor body.
Claim 52
Dependent Claim
15 words
A semiconductor body as in claim 16, wherein the oxygen diffusion barrier is silicon nitride.
Claim 53
Dependent Claim
32 words
A semiconductor body as in claim 16, wherein the fill material is polysilicon, and the planarization material is a dielectric material of reflowed phosphosilicate glass having a 6 percent concentration of phosphorus.
Claim 54
Dependent Claim
58 words
A semiconductor body as in claim 16, wherein the fill material includes a surface facing away from an interior of the body, and the layer of planarization material is disposed on the first oxygen diffusion barrier over the semiconductor surface proximate to the intersecton of the semiconductor surface and trench side wall and on the fill material surface.
Claim 55
Dependent Claim
45 words
An integrated circuit body as in claim 20, wherein the integrated circuit body includes silicon, the first and second oxygen diffusion barriers are silicon nitride, the fill material is polysilicon, and the dielectric material is reflowed phosphosilicate glass having a 6 percent concentration of phosphorus.
Claim 56
Dependent Claim
19 words
An integrated circuit body as in claim 20, further comprising: integrated circuit elements disposed in the integrated circuit body.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1999-12-03 | 2000-06-03 | 2000-12-03 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2003-12-03 | 2004-06-03 | 2004-12-03 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2007-12-03 | 2008-06-03 | 2008-12-03 | $7700.00 | Window Closed / Lapsed |