Patent US5580700A successfully refreshed from Google Patents.
US5580700A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Metal ion reduction in bottom anti-reflective coatings for use in semiconductor device formation
Assignee: EMD Performance Materials Corp
•
Filing: 1995-06-02
•
Granted: 1996-12-03
•
Expires: 2015-06-02
Abstract
Abstract The present invention provides a bottom anti-reflective coating compositions having a very low level of metal ions and a process for producing such compositions utilizing specially treated ion exchange resins. The present invention also provides photoresists produced using such bottom anti-reflective coating compositions and a method for producing semiconductor devices using such photoresists.
Inventors
- 👤 M. Dalil Rahman
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 16:21
CPC Classifications
G; G03; G03F; G03F7/00; G03F7/004; G03F7/09; G03F7/091
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
248 words
A method for producing a semiconductor device by producing a photoimage on a substrate comprising: a) treating an acidic ion exchange resin with water, washing said ion exchange resin with a mineral acid solution and thereby reducing the level of sodium and iron ions in the ion exchange resin to less than 500 ppb each; b) providing a solution of 2 to 50 weight percent of a reacted product of a copolymer of a methyl vinyl ether and a maleic anhydride and a suitable disperse yellow 9 dye, in a suitable solvent; c) passing said solution through the ion exchange resin and thereby reducing the level of sodium and iron ions in the solution to less than 200 ppb each; and d) formulating a bottom anti-reflecting coating composition by providing an admixture of: (1) said solution and (2) a suitable anti-reflective coating composition solvent; e) formulating a photoresist composition solution by providing an admixture of: (1) a photosensitive component in an mount sufficient to photosensitize the photoresist composition, (2) a water insoluble, aqueous alkali soluble film forming novolak resin in an amount sufficient to form a substantially uniform photoresist composition, and (3) a suitable photoresist solvent; f) coating a suitable substrate with the bottom anti-reflective composition; g) subsequently coating said suitable substrate with the photoresist composition; h) heat treating the coated substrate until substantially all of the solvent is removed; image-wise exposing the photoresist composition and removing the image-wise exposed areas of such composition with a suitable developer.
Claim 2
Independent Claim
248 words
A method for producing a semiconductor device by producing a photoimage on a substrate comprising: a) treating an acidic ion exchange resin with water, washing said ion exchange resin with a mineral acid solution and thereby reducing the level of sodium and iron ions in the ion exchange resin to less than 500 ppb each; b) providing a solution of 2 to 50 weight percent of a reacted product of a copolymer of a methyl vinyl ether and a maleic anhydride and a suitable disperse yellow 9 dye, in a suitable solvent; c) passing said solution through the ion exchange resin and thereby reducing the level of sodium and iron ions in the solution to less than 200 ppb each; and d) formulating a bottom anti-reflecting coating composition by providing an admixture of: (1) said solution and (2) a suitable anti-reflective coating composition solvent; e) formulating a photoresist composition solution by providing an admixture of: (1) a photosensitive component in an mount sufficient to photosensitize the photoresist composition, (2) a water insoluble, aqueous alkali soluble film forming novolak resin in an amount sufficient to form a substantially uniform photoresist composition, and (3) a suitable photoresist solvent; f) coating a suitable substrate with the bottom anti-reflective composition; g) subsequently coating said suitable substrate with the photoresist composition; h) heat treating the coated substrate until substantially all of the solvent is removed; image-wise exposing the photoresist composition and removing the image-wise exposed areas of such composition with a suitable developer.
Claim 3
Dependent Claim
57 words
The method of claim 1 further comprising heating said coated substrate to a temperature of from about 90° C. to about 120° C. for from about 30 seconds to about 180 seconds on a hot plate or from about 15 minutes to about 40 minutes in an oven after the exposure step but before the removing step.
Claim 4
Dependent Claim
52 words
The method of claim 1 further comprising heating said coated substrate to a temperature of from about 90° C. to about 120° C. for about 30 seconds to about 180 seconds on a hot plate or for from about 15 minutes to about 40 minutes in an oven after the removing step.
Claim 5
Dependent Claim
34 words
The method of claim 1 wherein said substrate comprises one or more components selected from the group consisting of silicon, aluminum, polymeric resins, silicon dioxide, doped silicon dioxide, silicon nitride, tantalum, copper and polysilicon.
Claim 6
Dependent Claim
30 words
The process of claim 1 wherein the amount of novolak resin in the photoresist composition ranges from about 70 percent to about 90 percent, based on the weight of solids.
Claim 7
Dependent Claim
17 words
The process of claim 1 wherein the photosensitive component comprises an ester of a multihydroxy phenolic compound.
Claim 8
Dependent Claim
17 words
The process of claim 6 wherein the photosensitive component comprises a sulfonic acid derivative of a trishydroxyphenylethane.
Claim 9
Dependent Claim
21 words
The process of claim 1 wherein the novolak resin is the reaction product of formaldehyde and one or more multi-hydroxy phenols.
Claim 10
Dependent Claim
51 words
The process of claim 1 wherein any of the solvents are selected from the group consisting of: propylene glycol mono-alkyl ether, propylene glycol methyl ether acetate, ethyl-3-ethoxypropionate, ethyl lactate, mixtures of ethyl-3-ethoxypropionate and ethyl lactate, mixtures of ethyl-3-ethoxypropionate and ethyl lactate, butyl acetate, xylene, diglyme and ethylene glycol monoethyl ether acetate.
Claim 11
Dependent Claim
19 words
The method of claim 1 wherein any of the solvents comprise propylene glycol monomethyl ether acetate or ethyl-3-ethoxy propionate.
References Cited (Backward Citations)
US2929808A
Cited
US4033909A
Cited
US4033910A
Cited
GB1509354A
Cited
US4452883A
Cited
US4567130A
Cited
US4584261A
Cited
US4914006A
Cited
US4636540A
Cited
US4784937A
Cited
US4833067A
Cited
US4747954A
Cited
JPS6472155A
Cited
US5116715A
Cited
US5175078A
Cited
US5118787A
Cited
US5073622A
Cited
JPH0465415A
Cited
EP0544325A1
Cited
EP0544324B1
Cited
WO1993012152A1
Cited
WO1993018437A1
Cited
WO1994001807A1
Cited
WO1994012912A1
Cited
US5286606A
Cited
WO1994014858A1
Cited
WO1994014863A1
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1999-12-03 | 2000-06-03 | 2000-12-03 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2003-12-03 | 2004-06-03 | 2004-12-03 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2007-12-03 | 2008-06-03 | 2008-12-03 | $7700.00 | Window Closed / Lapsed |