Developing solution for positive type photoresist

Abstract

Abstract PURPOSE:To improve the selection rate of a solution velocity and to eliminate defective development and sharp-cutting by using a specific aq. org. quaternary ammonium hydroxide soln. as an essential component and incorporating an amphoteric surfactant without contg. metal ions and a specific quaternary ammonium compd. to be added at need therein. CONSTITUTION:The aq. org. quaternary ammonium hydroxide soln. expressed by formula I (where, R1-R4 denote alkyl groups or hydroxy-substd. alkyl groups of 1-3 C) is used as the essential component and the amphoteric surfactant without contg. the metal ions and the quaternary ammonium compd. which is expressed by II (where, R1-R3 denote alkyl groups of 1-4 C; R4 denotes an alkyl group of 8-18 C; X denotes OH or OCOOH) and is to be added at need are incorporated therein. The wettability of the developing soln. with a resist surface is thereby improved and the selection ratio of the solution velocity between the exposed part and the non-exposed part is improved without lowering the sensitivity and heat resistance of the resist; in addition, the defective development and the sharp-cutting are eliminated.

Inventors

• 👤 Shiyunrei Chiyou
• 👤 Shunpei Shimizu

Bibliographic Details