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US4784937A Expired / Lapsed US ⏱️ 0.0 years remaining

Developing solution for positive-working photoresist comprising a metal ion free organic base and an anionic surfactant

Assignee: Tokyo Ohka Kogyo Co Ltd
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Filing: 1986-08-04
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Granted: 1988-11-15
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Expires: 2006-08-04
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Abstract

Abstract The aqueous developing solution of the invention for positive-working photoresist compositions contains, in addition to an organic basic compound free from metal ions, such as tetramethyl ammonium hydroxide and choline, as the principal ingredient, from 50 to 5000 ppm of an anionic or non-ionic fluorine-containing surface active agent of specific types. In comparison with conventional developing solutions without such a surface active agent, the inventive developing solution is advantageous in the uniformity of the patterned photoresist layer and higher sensitivity and smaller temperature dependency of development.

Inventors

  • 👤 Hatsuyuki Tanaka
  • 👤 Hidekatsu Kohara
  • 👤 Yoshiyuki Sato
  • 👤 Shingo Asaumi
  • 👤 Toshimasa Nakayama
  • 👤 Akira Yokota
  • 👤 Hisashi Nakane

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-10-31 15:58
CPC Classifications
G; G03; G03F; G03F7/00; G03F7/26; G03F7/30; G03F7/32; G03F7/322

Claims Analysis

Total Claims: 3
Claim 1
Independent Claim 167 words
A developing solution for positive-working photoresist compositions which comprises: (a) an aqueous medium; (b) an organic basic compound free from metal ions in an an amount sufficient to obtain a pH between 11.0 and 13.5; and (c) a fluorine-containing surface active agent in a concentration in the range from of 50 to 5000 ppm by weight, based on the amount of the developing solution, said fluorine-containing surface active agent being selected from the group consisting of an ionic fluorine-containing compounds represented by the general formula R f COOM and R' f SO 3 M, wherein R f and R' f are each a monovalent hydrocarbon group having from 2 to 20 carbon atoms, of which at least a part of the hydrogen atoms are replaced with fluorine atoms, and M is an atom or group selected from the group consisting of hydrogen, ammonium, quaternary ammonium of the formula NR 4 , wherein each R is independently hydrogen or an alkyl group having 1 to 3 carbon atoms.
Claim 2
Dependent Claim 167 words
A developing solution for positive-working photoresist compositions which comprises: (a) an aqueous medium; (b) an organic basic compound free from metal ions in an an amount sufficient to obtain a pH between 11.0 and 13.5; and (c) a fluorine-containing surface active agent in a concentration in the range from of 50 to 5000 ppm by weight, based on the amount of the developing solution, said fluorine-containing surface active agent being selected from the group consisting of an ionic fluorine-containing compounds represented by the general formula R f COOM and R' f SO 3 M, wherein R f and R' f are each a monovalent hydrocarbon group having from 2 to 20 carbon atoms, of which at least a part of the hydrogen atoms are replaced with fluorine atoms, and M is an atom or group selected from the group consisting of hydrogen, ammonium, quaternary ammonium of the formula NR 4 , wherein each R is independently hydrogen or an alkyl group having 1 to 3 carbon atoms.
Claim 3
Dependent Claim 27 words
The developing solution for positive-working photoresist compositions as claimed in claim 1 wherein the organic basic compound free from metal ions is tetramethyl ammonium hydroxide or choline.

References Cited (Backward Citations)

GB1367830A Cited
US4147545A Cited
US4530895A Cited
US4610953A Cited
JPS60179742A Cited
JPS60223120A Cited
US4603058A Cited
US4613561A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1991-11-15 1992-05-16 1992-11-15 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 1995-11-15 1996-05-16 1996-11-15 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 1999-11-15 2000-05-16 2000-11-15 $7700.00 Window Closed / Lapsed

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