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US4613561A Expired / Lapsed US ⏱️ 0.0 years remaining

Method of high contrast positive O-quinone diazide photoresist developing using pretreatment solution

Assignee: Shin Etsu MicroSi Inc
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Filing: 1984-10-17
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Granted: 1986-09-23
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Expires: 2004-10-17
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Abstract

Abstract A positive photoresist aqueous alkaline two-step developing method is provided that gives a high contrast to the photoresist. The developer disclosed comprises a formulation of aqueous alkali-base such as potassium hydroxide and a fluorocarbon or carboxylated surfactant. The incorporation of the fluorocarbon or carboxylated surfactant provides the unexpected increase in the contrast of the photoresist. A double dip method in effecting development of the exposed film is used. The contrast and sensitivity of the photoresist remains essentially unchanged over the life of the bath. The high contrast photoresist provides linewidth control and affords improved processing uniformity in photoresist imaging.

Inventors

  • 👤 James M. Lewis

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-10-24 14:28
CPC Classifications
G; G03; G03F; G03F7/00; G03F7/26; G03F7/30; G03F7/32; G03F7/322

Claims Analysis

Total Claims: 8
Claim 1
Independent Claim 181 words
In a process for developing a positive radiation sensitive resist film comprised of quinone diazide sulfonic acid derivatives and alkali soluble resin that has been coated on a substrate and an image thereon is exposed to radiation and thereafter developing this exposed resist film to form a contrasting surface relief pattern between the exposed image and the unexposed resist film, the improvement which comprises: (a) contacting the exposed film with an aqueous alkaline pretreatment solution containing from about 0.001 percent to about 1.0 percent based on the weight of the pretreatment solution of the surfactant selected from the group consisting of a fluorocarbon or carboxylated surfactant and sufficient base to provide alkalinity (b) subjecting the pretreated film obtained from step (a) to an aqueous rinsing; and (c) contacting the thus pretreated film from step (b) with an aqueous developer solution having a pH of at least 9 and containing at least 0.0001 percent based on the weight of the developer of a surfactant selected from the group consisting of fluorocarbon and carboxylated surfactants to dissolved the exposed image on said film.
Claim 2
Dependent Claim 181 words
In a process for developing a positive radiation sensitive resist film comprised of quinone diazide sulfonic acid derivatives and alkali soluble resin that has been coated on a substrate and an image thereon is exposed to radiation and thereafter developing this exposed resist film to form a contrasting surface relief pattern between the exposed image and the unexposed resist film, the improvement which comprises: (a) contacting the exposed film with an aqueous alkaline pretreatment solution containing from about 0.001 percent to about 1.0 percent based on the weight of the pretreatment solution of the surfactant selected from the group consisting of a fluorocarbon or carboxylated surfactant and sufficient base to provide alkalinity (b) subjecting the pretreated film obtained from step (a) to an aqueous rinsing; and (c) contacting the thus pretreated film from step (b) with an aqueous developer solution having a pH of at least 9 and containing at least 0.0001 percent based on the weight of the developer of a surfactant selected from the group consisting of fluorocarbon and carboxylated surfactants to dissolved the exposed image on said film.
Claim 3
Dependent Claim 35 words
The process of claim 1 in which the alkalinity strength of the pretreatment solution of step (a) is from about 10% to about 75% of the alkalinity strength of the developer solution of step (c).
Claim 4
Dependent Claim 28 words
The process of claim 1 in which the surfactant is present in the range of 0.001 percent to 0.1 percent based on the total weight of the developer.
Claim 5
Dependent Claim 23 words
The process of claim 1 wherein the alkalinity of the pretreatment solution in step (a) is adjusted by the addition of potassium hydroxide.
Claim 6
Dependent Claim 23 words
The process of claim 1 wherein the alkalinity of the pretreatment solution in step (a) is adjusted by the addition of potassium hydroxide.
Claim 7
Dependent Claim 138 words
The process of claim 1 in which the surfactant employed in steps (a) and (c) is a fluorocarbon surfactant and is characterized by the formula R f -Y-(CH 2 CH 2 O) m R wherein Y is a radical selected from the group --CH 2 CH 2 O--, --SO 2 NR', SO 3 , SO 2 N(R')CH 2 CO 2 , CO 2 and --CO--NR' wherein R f is either a straight or branched chain of the formula C p F 2p+1 wherein p is an integer from 3 to 17; and wherein R is hydrogen or an acyl or alkyl radical of 1 to 30 carbon atoms and m is an integer of 2 to 26 and preferably where m is an integer of 5-26, and R' is hydrogen or an alkyl radical of 1-6 carbon atoms.
Claim 8
Dependent Claim 111 words
The process of claim 1, in which the surfactant employed in steps (a) and (c) is a carboxylated surfactant characterized by the formula: R - O (C.sub.n H.sub.2n O).sub.m R.sub.1 COOX wherein R is a fatty alkyl group of 6 to 8 carbon atoms, R 1 is a C 1 to C 3 alkyl substituent, n has a value a value of 2 to 4, m has a value of 1 to 100 and X is selected from the group consisting of H + , Na + , K + , Li + , NH 4 , diethanolamine triethanolamine, Al ++ , Cu ++ , Mg ++ and Sr ++ .

References Cited (Backward Citations)

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USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1989-09-22 1990-03-24 1990-09-23 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 1993-09-22 1994-03-24 1994-09-23 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 1997-09-22 1998-03-24 1998-09-23 $7700.00 Window Closed / Lapsed

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