US5580700A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Metal ion reduction in bottom anti-reflective coatings for use in semiconductor device formation
Assignee: EMD Performance Materials Corp
•
Filing: 1995-06-02
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Granted: 1996-12-03
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Expires: 2015-06-02
Abstract
Abstract The present invention provides a bottom anti-reflective coating compositions having a very low level of metal ions and a process for producing such compositions utilizing specially treated ion exchange resins. The present invention also provides photoresists produced using such bottom anti-reflective coating compositions and a method for producing semiconductor devices using such photoresists.
Inventors
- 👤 M. Dalil Rahman
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 16:21
CPC Classifications
G; G03; G03F; G03F7/00; G03F7/004; G03F7/09; G03F7/091
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
248 words
A method for producing a semiconductor device by producing a photoimage on a substrate comprising: a) treating an acidic ion exchange resin with water, washing said ion exchange resin with a mineral acid solution and thereby reducing the level of sodium and iron ions in the ion exchange resin to less than 500 ppb each; b) providing a solution of 2 to 50 weight percent of a reacted product of a copolymer of a methyl vinyl ether and a maleic anhydride and a suitable disperse yellow 9 dye, in a suitable solvent; c) passing said solution through the ion exchange resin and thereby reducing the level of sodium and iron ions in the solution to less than 200 ppb each; and d) formulating a bottom anti-reflecting coating composition by providing an admixture of: (1) said solution and (2) a suitable anti-reflective coating composition solvent; e) formulating a photoresist composition solution by providing an admixture of: (1) a photosensitive component in an mount sufficient to photosensitize the photoresist composition, (2) a water insoluble, aqueous alkali soluble film forming novolak resin in an amount sufficient to form a substantially uniform photoresist composition, and (3) a suitable photoresist solvent; f) coating a suitable substrate with the bottom anti-reflective composition; g) subsequently coating said suitable substrate with the photoresist composition; h) heat treating the coated substrate until substantially all of the solvent is removed; image-wise exposing the photoresist composition and removing the image-wise exposed areas of such composition with a suitable developer.
Claim 2
Independent Claim
248 words
A method for producing a semiconductor device by producing a photoimage on a substrate comprising: a) treating an acidic ion exchange resin with water, washing said ion exchange resin with a mineral acid solution and thereby reducing the level of sodium and iron ions in the ion exchange resin to less than 500 ppb each; b) providing a solution of 2 to 50 weight percent of a reacted product of a copolymer of a methyl vinyl ether and a maleic anhydride and a suitable disperse yellow 9 dye, in a suitable solvent; c) passing said solution through the ion exchange resin and thereby reducing the level of sodium and iron ions in the solution to less than 200 ppb each; and d) formulating a bottom anti-reflecting coating composition by providing an admixture of: (1) said solution and (2) a suitable anti-reflective coating composition solvent; e) formulating a photoresist composition solution by providing an admixture of: (1) a photosensitive component in an mount sufficient to photosensitize the photoresist composition, (2) a water insoluble, aqueous alkali soluble film forming novolak resin in an amount sufficient to form a substantially uniform photoresist composition, and (3) a suitable photoresist solvent; f) coating a suitable substrate with the bottom anti-reflective composition; g) subsequently coating said suitable substrate with the photoresist composition; h) heat treating the coated substrate until substantially all of the solvent is removed; image-wise exposing the photoresist composition and removing the image-wise exposed areas of such composition with a suitable developer.
Claim 3
Dependent Claim
57 words
The method of claim 1 further comprising heating said coated substrate to a temperature of from about 90° C. to about 120° C. for from about 30 seconds to about 180 seconds on a hot plate or from about 15 minutes to about 40 minutes in an oven after the exposure step but before the removing step.
Claim 4
Dependent Claim
52 words
The method of claim 1 further comprising heating said coated substrate to a temperature of from about 90° C. to about 120° C. for about 30 seconds to about 180 seconds on a hot plate or for from about 15 minutes to about 40 minutes in an oven after the removing step.
Claim 5
Dependent Claim
34 words
The method of claim 1 wherein said substrate comprises one or more components selected from the group consisting of silicon, aluminum, polymeric resins, silicon dioxide, doped silicon dioxide, silicon nitride, tantalum, copper and polysilicon.
Claim 6
Dependent Claim
30 words
The process of claim 1 wherein the amount of novolak resin in the photoresist composition ranges from about 70 percent to about 90 percent, based on the weight of solids.
Claim 7
Dependent Claim
17 words
The process of claim 1 wherein the photosensitive component comprises an ester of a multihydroxy phenolic compound.
Claim 8
Dependent Claim
17 words
The process of claim 6 wherein the photosensitive component comprises a sulfonic acid derivative of a trishydroxyphenylethane.
Claim 9
Dependent Claim
21 words
The process of claim 1 wherein the novolak resin is the reaction product of formaldehyde and one or more multi-hydroxy phenols.
Claim 10
Dependent Claim
51 words
The process of claim 1 wherein any of the solvents are selected from the group consisting of: propylene glycol mono-alkyl ether, propylene glycol methyl ether acetate, ethyl-3-ethoxypropionate, ethyl lactate, mixtures of ethyl-3-ethoxypropionate and ethyl lactate, mixtures of ethyl-3-ethoxypropionate and ethyl lactate, butyl acetate, xylene, diglyme and ethylene glycol monoethyl ether acetate.
Claim 11
Dependent Claim
19 words
The method of claim 1 wherein any of the solvents comprise propylene glycol monomethyl ether acetate or ethyl-3-ethoxy propionate.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 1999-12-03 | 2000-06-03 | 2000-12-03 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2003-12-03 | 2004-06-03 | 2004-12-03 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2007-12-03 | 2008-06-03 | 2008-12-03 | $7700.00 | Window Closed / Lapsed |