Method for improving adhesion to a spin-on-glass

Claim 1

A method for planarizing the surface of an integrated circuit comprising: providing a layer of silicon dioxide on the surface of a silicon body; depositing a layer of a first conductive material onto said silicon dioxide surface; etching said layer of a first conductive material into a pattern; depositing a layer of a first insulating material onto said etched layer of conductive material; applying a siloxane solution to the surface of said integrated circuit such that all points on said surface lie below the surface of said siloxane solution; heating said integrated circuit so as to drive out all solvent from said siloxane solution; optionally applying a second layer of siloxane solution and then heating it to drive out the solvent; heating said integrated circuit in an oxygen atmosphere so as to cure said layer or layers of siloxane thereby converting them to a layer of cured spin-on-glass; providing a vacuum chamber and then baking said integrated circuit inside said vacuum chamber at a pressure less than about 3 torr for between 0.5 and 3 minutes; without allowing any increase in the pressure within said vacuum chamber, depositing a layer of a second insulating material onto the surface of said layer of cured spin-on-glass; etching via holes from the surface of said layer of a second insulating material down to the level of said first layer of conductive material; depositing a second layer of a conductive material onto the surface of said layer of a second insulating material so as to make contact with said first layer of conductive material wherever said via holes have been etched and; etching said second layer of conductive material into a pattern.

Claim 2

A method for planarizing the surface of an integrated circuit comprising: providing a layer of silicon dioxide on the surface of a silicon body; depositing a layer of a first conductive material onto said silicon dioxide surface; etching said layer of a first conductive material into a pattern; depositing a layer of a first insulating material onto said etched layer of conductive material; applying a siloxane solution to the surface of said integrated circuit such that all points on said surface lie below the surface of said siloxane solution; heating said integrated circuit so as to drive out all solvent from said siloxane solution; optionally applying a second layer of siloxane solution and then heating it to drive out the solvent; heating said integrated circuit in an oxygen atmosphere so as to cure said layer or layers of siloxane thereby converting them to a layer of cured spin-on-glass; providing a vacuum chamber and then baking said integrated circuit inside said vacuum chamber at a pressure less than about 3 torr for between 0.5 and 3 minutes; without allowing any increase in the pressure within said vacuum chamber, depositing a layer of a second insulating material onto the surface of said layer of cured spin-on-glass; etching via holes from the surface of said layer of a second insulating material down to the level of said first layer of conductive material; depositing a second layer of a conductive material onto the surface of said layer of a second insulating material so as to make contact with said first layer of conductive material wherever said via holes have been etched and; etching said second layer of conductive material into a pattern.

Claim 7

A method for preparing the surface of a layer of cured spin-on-glass prior to the deposition of a layer of a different material, comprising: heating said cure spin-on-glass layer inside a vacuum chamber, in which the pressure is less than about 3 torr, for between 0.5 and 3 minutes and; depositing said layer of a different material onto the surface of said cured spin-on-glass layer without prior readmission of the surrounding atmosphere back into said vacuum chamber.

Claim 8

A method for preparing the surface of a layer of cured spin-on-glass prior to the deposition of a layer of a different material, comprising: heating said cure spin-on-glass layer inside a vacuum chamber, in which the pressure is less than about 3 torr, for between 0.5 and 3 minutes and; depositing said layer of a different material onto the surface of said cured spin-on-glass layer without prior readmission of the surrounding atmosphere back into said vacuum chamber.