US5376590A
Expired / Lapsed
US
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Semiconductor device and method of fabricating the same
Assignee: NTT Inc
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Filing: 1993-01-19
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Granted: 1994-12-27
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Expires: 2013-01-19
Abstract
Abstract A semiconductor device includes an interlevel film constituted by a first dielectrics film containing dangling bonds and a bonded group of Si and hydrogen, and a second dielectrics film formed on the first dielectrics film.
Inventors
- 👤 Katsuyuki Machida
- 👤 Katsumi Murase
- 👤 Nobuhiro Shimoyama
- 👤 Toshiaki Tsuchiya
- 👤 Junichi Takahashi
- 👤 Kazushige Minegishi
- 👤 Yasuo Takahashi
- 👤 Hideo Namatsu
- 👤 Kazuo Imai
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 07:49
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/69; H10P14/692; H10P14/6921; H10P14/6922; H10P14/6923; H10P14/63; H10P14/6326; H10P14/6328; H10P14/6334; H10P14/6342; H10P14/65; H10P14/6516; H10P14/6529; H10P14/66; H10P14/662; H10P14/668; H10P14/6681; H10P14/6682; H10P14/69215; H10P14/6927; H10P14/694; H10P14/6943; H10P14/69433; H10P95/00; H10W; H10W20/00; H10W20/01; H10W20/071; H10W20/074; H10W20/075; H10W20/077; H10W20/081; H10W20/093; H10W20/096; H10W20/097; H10W20/40; H10W20/45; H10W20/48; H10P14/6336
Claims Analysis
Total Claims: 14
Claim 1
Independent Claim
76 words
A method of fabricating a semiconductor device, comprising the steps of: forming a first dielectric film containing dangling bonds and a bonded group of Si and hydrogen, wherein said first dielectric film is formed with a flow ratio of SiH 4 to oxygen of at least 0.5; and forming a second dielectrics film on said first dielectric film, thereby forming an interlevel film, wherein said interlevel film is planarized when said second dielectrics film is formed.
Claim 2
Independent Claim
76 words
A method of fabricating a semiconductor device, comprising the steps of: forming a first dielectric film containing dangling bonds and a bonded group of Si and hydrogen, wherein said first dielectric film is formed with a flow ratio of SiH 4 to oxygen of at least 0.5; and forming a second dielectrics film on said first dielectric film, thereby forming an interlevel film, wherein said interlevel film is planarized when said second dielectrics film is formed.
Claim 3
Dependent Claim
17 words
A method according to claim 1, wherein said first dielectrics film is formed by ECR plasma CVD.
Claim 4
Dependent Claim
16 words
A method according to claim 2, wherein said first dielectrics film is a silicon oxide film.
Claim 5
Dependent Claim
15 words
A method according to claim 1, wherein said first dielectrics film is a nitride film.
Claim 6
Dependent Claim
14 words
A method according to claim 1, wherein said first dielectrics film is an oxy-nitride-film.
Claim 7
Dependent Claim
28 words
A method according to claim 1, wherein a third dielectrics film having different characteristics from those of said second dielectrics film is formed on said second dielectrics film.
Claim 8
Dependent Claim
17 words
A method according to claim 6, wherein said third dielectrics film is formed by ECR plasma CVD.
Claim 9
Independent Claim
56 words
A method of fabricating a semiconductor device, comprising the steps of: forming a semiconductor device and a first metal interconnection on a semiconductor substrate; forming a first dielectrics film containing dangling bonds and a bonded group of Si and hydrogen; and forming a second dielectrics film on said first dielectrics film, thereby forming an interlevel film.
Claim 10
Independent Claim
56 words
A method of fabricating a semiconductor device, comprising the steps of: forming a semiconductor device and a first metal interconnection on a semiconductor substrate; forming a first dielectrics film containing dangling bonds and a bonded group of Si and hydrogen; and forming a second dielectrics film on said first dielectrics film, thereby forming an interlevel film.
Claim 11
Dependent Claim
28 words
A method according to claim 8, wherein a third dielectrics film having different characteristics from those of said second dielectrics film is formed on said second dielectrics film.
Claim 12
Independent Claim
95 words
A method of fabricating a semiconductor device, comprising the steps of: forming a silicon oxide film containing at least one of oxides boron and phosphorous on a semiconductor substrate on which a semiconductor device is formed; forming a first dielectrics film containing dangling bonds and a bonded group of Si and hydrogen, wherein said first dielectric film is formed with a flow ration of SiH 4 to oxygen of at least 0.5; and forming a second dielectrics film on said first film, wherein said interlevel film is planarized when said second dielectrics film is formed.
Claim 13
Independent Claim
95 words
A method of fabricating a semiconductor device, comprising the steps of: forming a silicon oxide film containing at least one of oxides boron and phosphorous on a semiconductor substrate on which a semiconductor device is formed; forming a first dielectrics film containing dangling bonds and a bonded group of Si and hydrogen, wherein said first dielectric film is formed with a flow ration of SiH 4 to oxygen of at least 0.5; and forming a second dielectrics film on said first film, wherein said interlevel film is planarized when said second dielectrics film is formed.
Claim 14
Dependent Claim
26 words
A method according to claim 10, wherein said second dielectrics film is a silicon oxide film containing at least one of oxides of boron and phosphorus.
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