US5545289A — Passivating, stripping and corrosion inhibition o…

Claim 1

Independent Claim 78 words

A process for passivating a substrate having etchant byproducts thereon, the process comprising the steps of: (a) placing the substrate into a vacuum chamber; (b) introducing a passivating gas into the vacuum chamber and forming a plasma from the passivating gas; (c) stopping the flow of passivating gas and extinguishing the plasma; (d) repeating step (b) and (c) at least once to passivate the etchant byproducts on the substrate; and (e) removing the passivated substrate from the chamber.

Claim 2

Dependent Claim 78 words

A process for passivating a substrate having etchant byproducts thereon, the process comprising the steps of: (a) placing the substrate into a vacuum chamber; (b) introducing a passivating gas into the vacuum chamber and forming a plasma from the passivating gas; (c) stopping the flow of passivating gas and extinguishing the plasma; (d) repeating step (b) and (c) at least once to passivate the etchant byproducts on the substrate; and (e) removing the passivated substrate from the chamber.

Claim 3

Dependent Claim 38 words

The process of claim 1, wherein step (d) is performed for a sufficient number of cycles that when the substrate is exposed to the atmosphere there is substantially no corrosion of the substrate for at least 24 hours.

Claim 4

Dependent Claim 54 words

The process of claim 1, wherein the substrate has features with sidewall deposits thereon, and wherein the sidewall deposits are etched using an etchant solution, and wherein after etching with the etchant solution, there is substantially no corrosion of the substrate for at least 1 week when the substrate is exposed to the atmosphere.

Claim 5

Dependent Claim 15 words

The process of claim 1, wherein step (d) is performed for 1 to 10 cycles.

Claim 6

Dependent Claim 16 words

The process of claim 4, where in step (d) is performed for 2 to 5 cycles.

Claim 7

Dependent Claim 22 words

The process of claim 1, wherein the duration of the entire passivating process is from about 30 seconds to about 180 seconds.

Claim 8

Dependent Claim 18 words

The process of claim 1, wherein step (b) has a duration of about 1 to about 60 seconds.

Claim 9

Dependent Claim 18 words

The process of claim 7, wherein step (b) has a duration of about 2 to about 20 seconds.

Claim 10

Dependent Claim 40 words

The process of claim 1, wherein after introducing passivating gas into the chamber, the chamber is maintained at a first higher pressure, and wherein after stopping the flow of passivating gas, the chamber is maintained at a second lower pressure.

Claim 11

Dependent Claim 28 words

The process of the claim 9, wherein the first higher pressure is at least about 1 Torr, and the second lower pressure is less than about 500 mTorr.

Claim 12

Dependent Claim 22 words

The process of claim 1, wherein the passivating gas is selected from the group comprising water vapor, ammonia, hydrogen, oxygen and nitrogen.

Claim 13

Dependent Claim 40 words

The process of claim 11, wherein the passivating gas comprises water vapor, oxygen and nitrogen, the ratio of the volumetric flow of water vapor to the combined volumetric flow of oxygen and nitrogen ranging from about 1:2 to about 2:1.

Claim 14

Dependent Claim 47 words

The process of claim 1, wherein the substrate has remnant resist thereon, and wherein either before step (b) or after step (c), the remnant resist on the substrate is stripped by introducing a stripping gas into the vacuum chamber and forming a plasma from the stripping gas.

Claim 15

Dependent Claim 28 words

The process of claim 13, wherein the passivating and stripping gases are selected from the group consisting of oxygen, nitrogen, fluorocarbon, water vapor, ammonia, hydrogen, and mixtures thereof.

Claim 16

Dependent Claim 31 words

The process of claim 13, wherein the stripping gas comprises oxygen and an oxygen activating gas, the oxygen activating gas being selected from the group consisting of fluorocarbon and nitrogen gas.

Claim 17

Dependent Claim 17 words

The process of claim 13, wherein the passivating and stripping gases comprise water vapor, oxygen and nitrogen.

Claim 18

Dependent Claim 31 words

The process of claim 16, wherein the ratio of the volumetric flow of water vapor to the combined volumetric flow of oxygen and nitrogen is from about 1:4 to about 1:40.

Claim 19

Dependent Claim 23 words

The process of claim 1, wherein the vacuum chamber is maintained at a temperature of from about 150° C. to about 400° C.

Claim 20

Dependent Claim 23 words

The process of claim 1, wherein the vacuum chamber is maintained at a pressure of from about 1 Torr to about 100 Torr.

Claim 21

Dependent Claim 27 words

The process of claim 1, wherein the plasma is formed by a microwave generator with an output power level ranging from about 500 to about 2500 Watts.

Claim 22

Dependent Claim 17 words

The process of claim 1, wherein the substrate comprises a silicon wafer having etched metal-containing features thereon.

Claim 23

Dependent Claim 128 words

The process of claim 1, wherein before step (e), corrosion of the substrate is inhibited by introducing an amine vapor into the vacuum chamber for adsorbing the amine vapor onto the substrate, the adsorbed amine substantially inhibiting corrosion of the substrate when the substrate is exposed to the atmosphere, and wherein the amine vapor comprises (R x ) 3 --N, where at least one R x is an alkyl moiety and the other R x are independently selected from the group consisting of hydrogen and alkyl moieties, and wherein the vapor pressure of the amine is sufficiently high that at least a portion of the amine is gaseous in the vacuum chamber and sufficiently low that at least a portion of the amine is adsorbed onto the substrate.

Claim 24

Dependent Claim 95 words

A process for stripping and passivating a substrate having etchant byproducts thereon, the process comprising the steps of: (a) placing a substrate into a vacuum chamber; (b) introducing passivating gas into the vacuum chamber, forming a plasma from the passivating gas, and maintaining the chamber at a first higher pressure; (c) stopping the flow of passivating gas, extinguishing the plasma, and maintaining the chamber at a second lower pressure; (d) repeating steps (b) and (c) at least once to passivate the etchant byproduct on the substrate; and (e) removing the passivated substrate from the chamber.

Claim 25

Dependent Claim 95 words

A process for stripping and passivating a substrate having etchant byproducts thereon, the process comprising the steps of: (a) placing a substrate into a vacuum chamber; (b) introducing passivating gas into the vacuum chamber, forming a plasma from the passivating gas, and maintaining the chamber at a first higher pressure; (c) stopping the flow of passivating gas, extinguishing the plasma, and maintaining the chamber at a second lower pressure; (d) repeating steps (b) and (c) at least once to passivate the etchant byproduct on the substrate; and (e) removing the passivated substrate from the chamber.

Claim 26

Dependent Claim 38 words

The process of claim 23, wherein step (d) is performed for a sufficient number of cycles that when the substrate is exposed to the atmosphere there is substantially no corrosion of the substrate for at least 24 hours.

Claim 27

Dependent Claim 54 words

The process of claim 23, wherein the substrate has features with sidewall deposits thereon, and wherein the sidewall deposits are etched using an etchant solution, and wherein after etching with the etchant solution, there is substantially no corrosion of the substrate for at least 1 week when the substrate is exposed to the atmosphere.

Claim 28

Dependent Claim 15 words

The process of claim 23, wherein step (d) is performed for 1 to 10 cycles.

Claim 29

Dependent Claim 22 words

The process of claim 23, wherein the duration of the entire passivating process is from about 30 seconds to about 180 seconds.

Claim 30

Dependent Claim 28 words

The process of the claim 23, wherein the first higher pressure is at least about 1 Torr, and the second lower pressure is less than about 500 mTorr.

Claim 31

Dependent Claim 23 words

The process of claim 23, wherein the passivating gas is selected from the group comprising of water vapor, ammonia, hydrogen, oxygen and nitrogen.

Claim 32

Dependent Claim 112 words

A process for stripping and passivating a substrate with remnant resist and etchant byproducts thereon, the process comprising the steps of: (a) placing the substrate into a vacuum chamber; (b) passivating etchant byproducts on the substrate by introducing a passivating gas into the vacuum chamber and forming a plasma from the passivating gas; (c) before or after step (b), stripping resist from the substrate by introducing a stripping gas into the vacuum chamber and forming a plasma from the stripping gas; (d) repeating steps (b) and (c) at least once in the same order that steps (b) and (c) were done; and (e) removing the passivated and stripped substrate from the chamber.

Claim 33

Dependent Claim 112 words

A process for stripping and passivating a substrate with remnant resist and etchant byproducts thereon, the process comprising the steps of: (a) placing the substrate into a vacuum chamber; (b) passivating etchant byproducts on the substrate by introducing a passivating gas into the vacuum chamber and forming a plasma from the passivating gas; (c) before or after step (b), stripping resist from the substrate by introducing a stripping gas into the vacuum chamber and forming a plasma from the stripping gas; (d) repeating steps (b) and (c) at least once in the same order that steps (b) and (c) were done; and (e) removing the passivated and stripped substrate from the chamber.

Claim 34

Dependent Claim 41 words

The process of claim 30, wherein the stripping and passivating steps are performed for a sufficient number of cycles that when the substrate is exposed to the atmosphere there is substantially no corrosion of the substrate for at least 24 hours.

Claim 35

Dependent Claim 54 words

The process of claim 30, wherein the substrate has features with sidewall deposits thereon, and wherein the sidewall deposits are etched using an etchant solution, and wherein after etching with the etchant solution, there is substantially no corrosion of the substrate for at least 1 week when the substrate is exposed to the atmosphere.

Claim 36

Dependent Claim 18 words

The process of claim 30, wherein the stripping and passivating steps are performed for 1 to 10 cycles.

Claim 37

Dependent Claim 18 words

The process of claim 33, wherein the stripping and passivating steps are performed for 2 to 5 cycles.

Claim 38

Dependent Claim 24 words

The process of claim 30, wherein the duration of the entire stripping and passivating process is from about 30 seconds to about 180 seconds.

Claim 39

Dependent Claim 26 words

The process of claim 30, wherein the passivating step (b) and the stripping step (c) each have a duration of about 1 to about 60 seconds.

Claim 40

Dependent Claim 28 words

The process of claim 30, wherein the passivating and stripping gases are selected from the group consisting of oxygen, nitrogen, fluorocarbon, water vapor, ammonia, hydrogen, and mixtures thereof.

Claim 41

Dependent Claim 17 words

The process of claim 37, wherein the passivating and stripping gases comprise water vapor, oxygen and nitrogen.

Claim 42

Dependent Claim 31 words

The process of claim 38, wherein the ratio of the volumetric flow of water vapor to the combined volumetric flow of oxygen and nitrogen is from about 1:2 to about 2:1.

Claim 43

Dependent Claim 30 words

The process of claim 38, wherein the ratio of the volumetric flow water vapor to the combined volumetric flow of oxygen and nitrogen is from about 1:4 to about 1:40.

Claim 44

Dependent Claim 32 words

The process of claim 30, wherein the stripping gas comprises oxygen and an oxygen activating gas, the oxygen activating gas being selected from the group consisting of chlorofluorocarbons, water vapor and nitrogen.

Claim 45

Dependent Claim 32 words

The process of claim 30, wherein during the passivating and stripping steps, the vacuum chamber is maintained at a temperature within the range of from about 150° C. to about 400° C.

Claim 46

Dependent Claim 23 words

The process of claim 30, wherein the vacuum chamber is maintained at substantially the same temperature in both the passivating and stripping steps.

Claim 47

Dependent Claim 20 words

The process of claim 30, wherein the vacuum chamber is maintained at different temperatures during the passivating and stripping steps.

Claim 48

Dependent Claim 29 words

The process of claim 30, wherein during the passivating and stripping steps, the vacuum chamber is maintained at a pressure of from about 1 Torr to about 100 Torr.

Claim 49

Dependent Claim 37 words

The process of claim 30, wherein during the passivating and stripping steps, the plasma is formed by applying an RF current having a power level of about 500 Watts to about 2500 Watts to a microwave generator.

Claim 50

Dependent Claim 17 words

The process of claim 30, wherein the substrate comprises a silicon wafer having etched metal-containing features thereon.

Claim 51

Dependent Claim 126 words

The process of claim 30, wherein before step (e), corrosion of the substrate is inhibited by introducing an amine vapor into the vacuum chamber for adsorping the amine vapor onto the substrate, the adsorbed amine substantially inhibiting corrosion of the substrate when the substrate is exposed to the atmosphere, wherein the amine comprises (R x ) 3 --N, where at least one R x is an alkyl moiety and the other R x are independently selected from the group consisting of hydrogen and alkyl moieties, and wherein the vapor pressure of the amine is sufficiently high that at least a portion of the amine is gaseous in the vacuum chamber and sufficiently low that at least a portion of the amine is adsorbed onto the substrate.

Claim 52

Dependent Claim 88 words

A process for passivating a substrate with etchant byproducts thereon, the process comprising the steps of: (a) placing the substrate into a vacuum chamber; (b) introducing a process gas into the vacuum chamber, the process gas comprising water vapor, oxygen and nitrogen, the ratio of the volumetric flow of water vapor to the combined volumetric flow of oxygen and nitrogen ranging from about 1:2 to about 2:1; and (c) forming a plasma from the process gas for a sufficient time to passivate the etchant byproducts on the substrate.

Claim 53

Dependent Claim 88 words

A process for passivating a substrate with etchant byproducts thereon, the process comprising the steps of: (a) placing the substrate into a vacuum chamber; (b) introducing a process gas into the vacuum chamber, the process gas comprising water vapor, oxygen and nitrogen, the ratio of the volumetric flow of water vapor to the combined volumetric flow of oxygen and nitrogen ranging from about 1:2 to about 2:1; and (c) forming a plasma from the process gas for a sufficient time to passivate the etchant byproducts on the substrate.

Claim 54

Dependent Claim 22 words

The process of claim 49, wherein the vacuum chamber is maintained at a pressure ranging from about 1 to about 10 Torr.

Claim 55

Dependent Claim 23 words

The process of claim 49, wherein the vacuum chamber is maintained at a temperature ranging from about 150° C. to about 400° C.

Claim 56

Dependent Claim 95 words

A process for simultaneously stripping and passivating a substrate with remnant resist and etchant byproducts thereon, the process comprising the steps of: (a) placing the substrate into a vacuum chamber; (b) introducing a process gas into the vacuum chamber, the process gas comprising water vapor, oxygen and nitrogen, the ratio of the volumetric flow of water vapor to the combined volumetric flow of oxygen and nitrogen ranging from about 1:4 to about 1:40; and (c) forming a plasma from the process gas to passivate the etchant byproducts, and strip the remnant resist, on the substrate.

Claim 57

Dependent Claim 95 words

A process for simultaneously stripping and passivating a substrate with remnant resist and etchant byproducts thereon, the process comprising the steps of: (a) placing the substrate into a vacuum chamber; (b) introducing a process gas into the vacuum chamber, the process gas comprising water vapor, oxygen and nitrogen, the ratio of the volumetric flow of water vapor to the combined volumetric flow of oxygen and nitrogen ranging from about 1:4 to about 1:40; and (c) forming a plasma from the process gas to passivate the etchant byproducts, and strip the remnant resist, on the substrate.

Claim 58

Dependent Claim 22 words

The process of claim 52, wherein the vacuum chamber is maintained at a pressure ranging from about 1 to about 10 Torr.

Claim 59

Dependent Claim 22 words

The process of claim 52, wherein the vacuum chamber is maintained at a temperature ranging from about 150° to about 400° C.

Claim 60

Dependent Claim 141 words

A process for inhibiting corrosion of a substrate having etchant byproducts thereon, comprising the steps of: (a) placing the substrate into a vacuum chamber; (b) forming an amine vapor; and (c) introducing the amine vapor into the vacuum chamber for adsorping the amine vapor onto the substrate, the adsorbed amine substantially inhibiting corrosion of the substrate when the substrate is exposed to the atmosphere, wherein the amine comprises (R x ) 3 --N, where at least one R x is an alkyl moiety and the other R x are independently selected from the group consisting of hydrogen and alkyl moieties, and wherein the vapor pressure of the amine is sufficiently high that at least a portion of the amine is gaseous in the vacuum chamber and sufficiently low that at least a portion of the amine is adsorbed onto the substrate.

Claim 61

Dependent Claim 141 words

A process for inhibiting corrosion of a substrate having etchant byproducts thereon, comprising the steps of: (a) placing the substrate into a vacuum chamber; (b) forming an amine vapor; and (c) introducing the amine vapor into the vacuum chamber for adsorping the amine vapor onto the substrate, the adsorbed amine substantially inhibiting corrosion of the substrate when the substrate is exposed to the atmosphere, wherein the amine comprises (R x ) 3 --N, where at least one R x is an alkyl moiety and the other R x are independently selected from the group consisting of hydrogen and alkyl moieties, and wherein the vapor pressure of the amine is sufficiently high that at least a portion of the amine is gaseous in the vacuum chamber and sufficiently low that at least a portion of the amine is adsorbed onto the substrate.

Claim 62

Dependent Claim 23 words

The process of claim 55, wherein the vacuum chamber is maintained at a temperature ranging from about 150° C. to about 400° C.

Claim 63

Dependent Claim 22 words

The process of claim 55, wherein the vacuum chamber is maintained at pressure ranging from about 1 Torr to about 10 Torr.

Claim 64

Dependent Claim 26 words

The process of claim 55, wherein sufficient amine is adsorbed onto the substrate that corrosion of the substrate is inhibited for at least about 24 hours.

Claim 65

Dependent Claim 21 words

The process of claim 55, wherein the amine vapor is introduced into the vacuum chamber for less than about 120 seconds.

Claim 66

Dependent Claim 22 words

The process of claim 55, wherein the amine comprises two alkyl moieties, each alkyl moiety comprising from 1 to 5 carbon atoms.

Claim 67

Dependent Claim 12 words

The process of claim 55, wherein the amine comprises three alkyl moieties.

Claim 68

Dependent Claim 19 words

The process of claim 55, wherein the amine is selected from the group consisting of monomethylamine, dimethylamine and trimethylamine.

Claim 69

Dependent Claim 36 words

The process of claim 55, wherein in step (b), the amine vapor is formed by maintaining an amine vapor source at room temperature and at a pressure ranging from about 50 Torr to about 200 Torr.

Claim 70

Dependent Claim 23 words

The process of claim 55, wherein the amine vapor is maintained at a pressure ranging from about 100 Torr to about 150 Torr.

Claim 71

Dependent Claim 231 words

A process for stripping and passivating a substrate with remnant resist and etchant byproducts thereon, the process comprising the steps of: (a) placing the substrate into a vacuum chamber maintained at a pressure of about 1 Torr to about 100 Torr; (b) passivating etchant byproducts on the substrate by introducing a passivating gas into the vacuum chamber and forming a plasma from the passivating gas; (c) before or after step (b), stripping resist from the substrate by introducing a stripping gas into the vacuum chamber and forming a plasma from the stripping gas; (d) repeating steps (b) and (c) at least once in the same order that steps (b) and (c) were done; and (e) inhibiting corrosion of the substrate by introducing amine vapor into the vacuum chamber for adsorping the amine vapor onto the substrate, the adsorbed amine substantially inhibiting corrosion of the substrate when the substrate is exposed to the atmosphere, wherein the amine comprises (R x ) 3 --N, where at least one R x is an alkyl moiety and the other R x are independently selected from the group consisting of hydrogen and alkyl moieties, and wherein the vapor pressure of the amine is sufficiently high that at least a portion of the amine is gaseous in the vacuum chamber and is sufficiently low that at least a portion of the amine is adsorbed onto the substrate.

Claim 72

Dependent Claim 231 words

A process for stripping and passivating a substrate with remnant resist and etchant byproducts thereon, the process comprising the steps of: (a) placing the substrate into a vacuum chamber maintained at a pressure of about 1 Torr to about 100 Torr; (b) passivating etchant byproducts on the substrate by introducing a passivating gas into the vacuum chamber and forming a plasma from the passivating gas; (c) before or after step (b), stripping resist from the substrate by introducing a stripping gas into the vacuum chamber and forming a plasma from the stripping gas; (d) repeating steps (b) and (c) at least once in the same order that steps (b) and (c) were done; and (e) inhibiting corrosion of the substrate by introducing amine vapor into the vacuum chamber for adsorping the amine vapor onto the substrate, the adsorbed amine substantially inhibiting corrosion of the substrate when the substrate is exposed to the atmosphere, wherein the amine comprises (R x ) 3 --N, where at least one R x is an alkyl moiety and the other R x are independently selected from the group consisting of hydrogen and alkyl moieties, and wherein the vapor pressure of the amine is sufficiently high that at least a portion of the amine is gaseous in the vacuum chamber and is sufficiently low that at least a portion of the amine is adsorbed onto the substrate.

Claim 73

Dependent Claim 226 words

A process for stripping, passivating, and inhibiting corrosion of a substrate with remnant resist and etchant byproducts on a substrate, the process comprising the steps of: (a) placing the substrate into a vacuum chamber at pressure ranging from about 1 Torr to about 100 Torr; (b) simultaneously passivating etchant byproducts and stripping remnant resist on the substrate by (i) introducing a process gas into the vacuum chamber, the process gas comprising water vapor, oxygen and nitrogen, the ratio of the volumetric flow of the water vapor to the combined volumetric flow of oxygen and nitrogen ranging from about 1:4 to about 1:40, and (ii) forming a plasma from the process gas; (c) inhibiting corrosion of the substrate by introducing amine vapor into the vacuum chamber for adsorbing amine onto the substrate, the adsorbed amine substantially inhibiting corrosion of the substrate when the substrate is exposed to the atmosphere, wherein the amine comprises (R x ) 3 --N, where at least one R x is an alkyl moiety and the other R x are independently selected from the group consisting of hydrogen and alkyl moieties, and wherein the vapor pressure of the amine is sufficiently high that at least a portion of the amine is gaseous in the vacuum chamber and is sufficiently low that at least a portion of the amine is adsorbed onto the substrate.

Claim 74

Dependent Claim 226 words

A process for stripping, passivating, and inhibiting corrosion of a substrate with remnant resist and etchant byproducts on a substrate, the process comprising the steps of: (a) placing the substrate into a vacuum chamber at pressure ranging from about 1 Torr to about 100 Torr; (b) simultaneously passivating etchant byproducts and stripping remnant resist on the substrate by (i) introducing a process gas into the vacuum chamber, the process gas comprising water vapor, oxygen and nitrogen, the ratio of the volumetric flow of the water vapor to the combined volumetric flow of oxygen and nitrogen ranging from about 1:4 to about 1:40, and (ii) forming a plasma from the process gas; (c) inhibiting corrosion of the substrate by introducing amine vapor into the vacuum chamber for adsorbing amine onto the substrate, the adsorbed amine substantially inhibiting corrosion of the substrate when the substrate is exposed to the atmosphere, wherein the amine comprises (R x ) 3 --N, where at least one R x is an alkyl moiety and the other R x are independently selected from the group consisting of hydrogen and alkyl moieties, and wherein the vapor pressure of the amine is sufficiently high that at least a portion of the amine is gaseous in the vacuum chamber and is sufficiently low that at least a portion of the amine is adsorbed onto the substrate.

Claim 75

Dependent Claim 241 words

A process for stripping, passivating, and inhibiting corrosion of a substrate with remnant resist and etchant byproducts thereon, the process comprising the steps of: (a) placing the substrate into a vacuum chamber at pressure ranging from about 1 Torr to about 100 Torr; (b) passivating etchant byproduct on the substrate by introducing a process gas into the vacuum chamber and forming a plasma from the process gas, the process gas comprising water vapor, oxygen and nitrogen, the ratio of the volumetric flow of water vapor to the combined volumetric flow of oxygen and nitrogen ranging from about 1:2 to about 2:1; (c) stripping remnant resist from the substrate by introducing a stripping gas into the vacuum chamber and forming a plasma from the stripping gas; and (d) inhibiting corrosion of the substrate by introducing amine vapor into the vacuum chamber for adsorping amine onto the substrate, the adsorbed amine substantially inhibiting corrosion of the substrate when the substrate is exposed to the atmosphere, wherein the amine comprises (R x ) 3 --N, where at least one R x is an alkyl moiety and the other R x are independently selected from the group consisting of hydrogen and alkyl moieties, and wherein the vapor pressure of the amine is sufficiently high that at least a portion of the amine is gaseous in the vacuum chamber and is sufficiently low that at least a portion of the amine is adsorbed onto the substrate.

Claim 76

Dependent Claim 241 words

A process for stripping, passivating, and inhibiting corrosion of a substrate with remnant resist and etchant byproducts thereon, the process comprising the steps of: (a) placing the substrate into a vacuum chamber at pressure ranging from about 1 Torr to about 100 Torr; (b) passivating etchant byproduct on the substrate by introducing a process gas into the vacuum chamber and forming a plasma from the process gas, the process gas comprising water vapor, oxygen and nitrogen, the ratio of the volumetric flow of water vapor to the combined volumetric flow of oxygen and nitrogen ranging from about 1:2 to about 2:1; (c) stripping remnant resist from the substrate by introducing a stripping gas into the vacuum chamber and forming a plasma from the stripping gas; and (d) inhibiting corrosion of the substrate by introducing amine vapor into the vacuum chamber for adsorping amine onto the substrate, the adsorbed amine substantially inhibiting corrosion of the substrate when the substrate is exposed to the atmosphere, wherein the amine comprises (R x ) 3 --N, where at least one R x is an alkyl moiety and the other R x are independently selected from the group consisting of hydrogen and alkyl moieties, and wherein the vapor pressure of the amine is sufficiently high that at least a portion of the amine is gaseous in the vacuum chamber and is sufficiently low that at least a portion of the amine is adsorbed onto the substrate.

Claim 77

Dependent Claim 11 words

A corrosion resistant substrate formed by the process of claim 1.

Claim 78

Dependent Claim 11 words

A corrosion resistant substrate formed by the process of claim 23.

Claim 79

Dependent Claim 11 words

A corrosion resistant substrate formed by the process of claim 30.

Claim 80

Dependent Claim 11 words

A corrosion resistant substrate formed by the process of claim 49.

Claim 81

Dependent Claim 11 words

A corrosion resistant substrate formed by the process of claim 52.

Claim 82

Dependent Claim 11 words

A corrosion resistant substrate formed by the process of claim 55.

Claim 83

Dependent Claim 38 words

The process of claim 65, wherein step (d) is performed for a sufficient number of cycles that when the substrate is exposed to the atmosphere there is substantially no corrosion of the substrate for at least 24 hours.

Claim 84

Dependent Claim 15 words

The process of claim 65, wherein step (d) is performed for 1 to 10 cycles.

Claim 85

Dependent Claim 21 words

The process of claim 65, wherein the duration of the entire process is from about 30 seconds to about 180 seconds.

Claim 86

Dependent Claim 21 words

The process of claim 65, wherein steps (b) and (c) each have a duration of about 1 to about 60 seconds.

Claim 87

Dependent Claim 24 words

The process of claim 65, wherein the passivating and stripping gases are selected from the group comprising water vapor, ammonia, hydrogen, oxygen and nitrogen.

Claim 88

Dependent Claim 22 words

The process of claim 65, wherein the amine comprises two alkyl moieties, each alkyl moiety comprising from 1 to 5 carbon atoms.

Claim 89

Dependent Claim 19 words

The process of claim 65, wherein the amine is selected from the group consisting of monomethylamine, dimethylamine and trimethylamine.

Claim 90

Dependent Claim 21 words

The process of claim 66, wherein the duration of the entire process is from about 30 seconds to about 180 seconds.

Claim 91

Dependent Claim 18 words

The process of claim 66, wherein step (b) has a duration of about 1 to about 60 seconds.

Claim 92

Dependent Claim 22 words

The process of claim 66, wherein the amine comprises two alkyl moieties, each alkyl moiety comprising from 1 to 5 carbon atoms.

Claim 93

Dependent Claim 19 words

The process of claim 66, wherein the amine is selected from the group consisting of monomethylamine, dimethylamine and trimethylamine.

Claim 94

Dependent Claim 21 words

The process of claim 67, wherein the duration of the entire process is from about 30 seconds to about 180 seconds.

Claim 95

Dependent Claim 18 words

The process of claim 67, wherein step (b) has a duration of about 1 to about 60 seconds.

Claim 96

Dependent Claim 22 words

The process of claim 67, wherein the amine comprises two alkyl moieties, each alkyl moiety comprising from 1 to 5 carbon atoms.

Claim 97

Dependent Claim 19 words

The process of claim 67, wherein the amine is selected from the group consisting of monomethylamine, dimethylamine and trimethylamine.

Claim 98

Dependent Claim 11 words

A corrosion resistant substrate formed by the process of claim 65.

Claim 99

Dependent Claim 11 words

A corrosion resistant substrate formed by the process of claim 66.

Claim 100

Dependent Claim 11 words

A corrosion resistant substrate formed by the process of claim 67.

Annuity Stage	Window Opens	Payment Deadline	Surcharge Period Until	Estimated Fee	Status
3.5 Years (Year 4)	1999-08-13	2000-02-12	2000-08-13	$2000.00	Window Closed / Lapsed
7.5 Years (Year 8)	2003-08-13	2004-02-12	2004-08-13	$3760.00	Window Closed / Lapsed
11.5 Years (Year 12)	2007-08-13	2008-02-12	2008-08-13	$7700.00	Window Closed / Lapsed

Passivating, stripping and corrosion inhibition of semiconductor substrates

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