US4877757A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of sequential cleaning and passivating a GaAs substrate using remote oxygen plasma
Assignee: Texas Instruments Inc
•
Filing: 1988-12-07
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Granted: 1989-10-31
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Expires: 2008-12-07
Abstract
Abstract A processing apparatus and method for depositing a passivating layer on a mercury-cadmium-telluride wafer utilizing a single process chamber to provide oxygen gas to the chamber with the excitation energy being provided by a remotely generated plasma in order to remove any organic residue and then supplying either a sulfide or selenide gas in combination with illuminating the wafer with an in situ generated ultraviolet energy to produce a passivating layer.
Inventors
- 👤 Rudy L. York
- 👤 Joseph D. Luttmer
- 👤 Patricia B. Smith
- 👤 Cecil J. Davis
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 09:55
CPC Classifications
H; H10; H10P; H10P72/00; H10P72/04; H10P72/0402; H10P72/0406; H10P14/00; H10P14/60; H10P14/69; H10P50/00; H10P50/20; H10P52/00; H10P95/00; H10P95/70; Y; Y10; Y10S; Y10S148/00; Y10S148/017; Y10S148/021; Y10S148/056
Claims Analysis
Total Claims: 13
Claim 1
Independent Claim
99 words
A method for sequential cleaning and passivating a mercury-cadmium-telluride wafer with sulfide in a single process chamber, comprising: (a) disposing said wafer in a process chamber within a process module at low pressure; (b) generating a remote plasma from oxygen gas; and (c) introducing the remote plasma within said chamber and to the face of the wafer for an appropriate time period; (d) introducing a sulfide gas into the chamber and to the face of the wafer for an appropriate time period; and (e) illuminating said sulfide gas within said chamber with additional Ultraviolet light produced within said module.
Claim 2
Independent Claim
99 words
A method for sequential cleaning and passivating a mercury-cadmium-telluride wafer with sulfide in a single process chamber, comprising: (a) disposing said wafer in a process chamber within a process module at low pressure; (b) generating a remote plasma from oxygen gas; and (c) introducing the remote plasma within said chamber and to the face of the wafer for an appropriate time period; (d) introducing a sulfide gas into the chamber and to the face of the wafer for an appropriate time period; and (e) illuminating said sulfide gas within said chamber with additional Ultraviolet light produced within said module.
Claim 3
Dependent Claim
22 words
The process as set forth in claim 1 including the step of purging said chamber with oxygen gas after disposing said wafer.
Claim 4
Dependent Claim
23 words
The process as set forth in claim 1 including the step of purging said chamber with nitrogen gas after illuminating said sulfide gas.
Claim 5
Independent Claim
90 words
A method for passivating a mercury-cadmium-telluride wafer with selenide comprising: (a) disposing a wafer in a process chamber within a process module at low pressure; (b) generating a remote plasma from oxygen gas; (c) introducing the remote plasma into said chamber and to the face of the wafer for an appropriate time period; (d) introducing a selenide gas within the chamber and to the face of the wafer for an appropriate time period; and (e) illuminating said selenide gas within said chamber with additional Ultraviolet light produced within said module.
Claim 6
Independent Claim
90 words
A method for passivating a mercury-cadmium-telluride wafer with selenide comprising: (a) disposing a wafer in a process chamber within a process module at low pressure; (b) generating a remote plasma from oxygen gas; (c) introducing the remote plasma into said chamber and to the face of the wafer for an appropriate time period; (d) introducing a selenide gas within the chamber and to the face of the wafer for an appropriate time period; and (e) illuminating said selenide gas within said chamber with additional Ultraviolet light produced within said module.
Claim 7
Dependent Claim
22 words
The process as set forth in claim 4 including the step of purging said chamber with oxygen gas after disposing said wafer.
Claim 8
Dependent Claim
23 words
The process as set forth in claim 4 including the step of purging said chamber with nitrogen gas after illuminating said sulfide gas.
Claim 9
Independent Claim
82 words
A method for sequential cleaning and passivating a mercury-cadmium-telluride film with sulfide in a single processing chamber, comprising the steps of: (a) generating free radicals from an oxygen containing gas in a plasma generator remote from the processing chamber; and (b) introducing the free radicals to said chamber and to the face of the wafer for an appropriate time period; and (c) introducing a sulfur containing gas to the chamber and to the face of the wafer for an appropriate time period.
Claim 10
Independent Claim
82 words
A method for sequential cleaning and passivating a mercury-cadmium-telluride film with sulfide in a single processing chamber, comprising the steps of: (a) generating free radicals from an oxygen containing gas in a plasma generator remote from the processing chamber; and (b) introducing the free radicals to said chamber and to the face of the wafer for an appropriate time period; and (c) introducing a sulfur containing gas to the chamber and to the face of the wafer for an appropriate time period.
Claim 11
Dependent Claim
28 words
The method as set forth in claim 7 including the step of illuminating said sulfur containing gas within said chamber with additional ultraviolet light produced within said module.
Claim 12
Dependent Claim
22 words
The method as set forth in claim 7 including the step of purging said chamber with oxygen gas after disposing said wafer.
Claim 13
Dependent Claim
23 words
The method as set forth in claim 7 including the stp of purging said chamber with nitrogen gas after illuminating said sulfide gas.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1992-10-30 | 1993-05-01 | 1993-10-31 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1996-10-30 | 1997-05-01 | 1997-10-31 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2000-10-30 | 2001-05-01 | 2001-10-31 | $7700.00 | Window Closed / Lapsed |