US4778776A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Passivation with a low oxygen interface
Assignee: Intersil Corp
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Filing: 1986-07-07
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Granted: 1988-10-18
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Expires: 2006-07-07
Abstract
Abstract A process for depositing oxygen doped semi-insulating polycrystalline silicon (SIPOS) as a passivation layer over the junction of a semiconductor silicon substrate in which the substrate is subjected to an oxygen removal step immediately prior to the creation of the SIPOS layer to thereby prevent the creation of an oxide layer at the interface between the SIPOS and the substrate.
Inventors
- 👤 David W. Tong
- 👤 John L. Benjamin
- 👤 William R. VanDell
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-01 06:25
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/20; H10P14/34; H10P14/3402; H10P14/3404; H10P14/3411; Y; Y10; Y10S; Y10S257/00; Y10S257/905; Y10S257/912
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
64 words
In a process for fabricating a semiconductor device having an oxygenated polycrystalline passivation layer deposited on a silicon substrate the improvement comprising the steps of: removing silicon oxide from the surface of the silicon onto which the polycrystalline layer is deposited; and depositing said passivation layer on said substrate under conditions which prevent the reformation of said oxide prior to deposition of said layer.
Claim 2
Dependent Claim
64 words
In a process for fabricating a semiconductor device having an oxygenated polycrystalline passivation layer deposited on a silicon substrate the improvement comprising the steps of: removing silicon oxide from the surface of the silicon onto which the polycrystalline layer is deposited; and depositing said passivation layer on said substrate under conditions which prevent the reformation of said oxide prior to deposition of said layer.
Claim 3
Dependent Claim
29 words
The method of claim 1 wherein the step of removing comprises exposing the substrate to a temperature in excess of 1000° C. in the presence of a reducing atmosphere.
Claim 4
Dependent Claim
18 words
The method of claim 1 wherein the step of removing comprises sputtering said substrate in an inert atmosphere.
Claim 5
Dependent Claim
21 words
The method recited in claim 1 wherein said step of removing comprises plasma etching said substate in a halogen-containing gas atmosphere.
Claim 6
Dependent Claim
58 words
The method of claim 1 wherein said polycrystalline layer is applied by reacting a silicon containing gas and an oxygen containing gas in a reaction zone adjacent said substrate, said oxygen containing gas being introduced into said reaction zone after said silicon containing gas to prevent the oxidation of said substrate surface prior to deposition of said layer.
Claim 7
Dependent Claim
35 words
A semiconductor device comprising: a silicon crystal substrate; and a polycrystalline silicon layer containing oxygen deposited on said substrate, said crystal substrate being devoid of a silicon oxide layer intermediate said substrate and said layer.
Claim 8
Dependent Claim
35 words
A semiconductor device comprising: a silicon crystal substrate; and a polycrystalline silicon layer containing oxygen deposited on said substrate, said crystal substrate being devoid of a silicon oxide layer intermediate said substrate and said layer.
References Cited (Backward Citations)
US3884788A
Cited
US4361461A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1991-10-18 | 1992-04-18 | 1992-10-18 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1995-10-18 | 1996-04-18 | 1996-10-18 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1999-10-18 | 2000-04-18 | 2000-10-18 | $7700.00 | Window Closed / Lapsed |