Manufacture of semiconductor device

Abstract

Abstract PURPOSE:To prevent the after corrosion of wirings comprising an Al alloy film, especially an Al-Cu alloy film by performing dry etching for an Al film and an Al alloy film on a semiconductor substrate by using chlorine based reaction gas, and exposing the semiconductor substrate to steam in a pressure reduced atmosphere. CONSTITUTION:A resist film 8 on an Si substrate 5 is patterned, and a resist pattern 8a is formed. With the resist pattern 8a as a mask, an Al-Cu alloy film 7 is etched by a reactive sputter etching method using SiCl4/Cl2 mixed gas. In order to remove the resist pattern 8a that is used as the mask, the device is put into an ashing chamber 12 wherein pressure is reduced beforehand. Steam is introduced into a chamber 31. At this time, the steam reacts with AlCl3 and CuxCly which remain on the surface of a wafer 5. Thus, hydrolysis of the AlCl3 and CuxCly can be readily performed.

Inventors

• 👤 Toshiyuki Ishida
• 👤 石田　利幸

Bibliographic Details