US5536967A
Expired / Lapsed
US
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Semiconductor device including Schottky gate of silicide and method for the manufacture of the same
Assignee: Fujitsu Ltd
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Filing: 1994-10-07
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Granted: 1996-07-16
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Expires: 2014-10-07
Abstract
Abstract A Schottky gate electrode of a refractory metal silicide is formed on a compound semiconductor, by which the barrier height is maintained satisfactorily even after heat treatment above 800 DEG C. Accordingly, it is possible to form an impurity diffused region using the Schottky gate electrode as a mask and then to effect the recrystallization of the semiconductor or the activation of the impurity by heat treatment, so that source and drain regions can be positioned by self-alignment relative to the gate electrode.
Inventors
- 👤 Naoki Yokoyama
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 02:02
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/01; H10D30/061; H10D30/0612; H10D30/0616; H10D30/60; H10D30/67; H10D30/6729; H10D30/6737; H10D30/6738; H10D30/674; H10D30/675; H10D30/80; H10D30/87; H10D64/00; H10D64/60; H10D64/64; H10D62/00; H10D62/80; H10D62/85
Claims Analysis
Total Claims: 24
Claim 1
Independent Claim
102 words
A Schottky gate field effect transistor, comprising: a compound semiconductor layer; a Schottky gate electrode of a refractory metal silicide including Mo on said compound semiconductor layer; and source and drain regions at both sides of said Schottky gate electrode, the source and drain regions having edges aligned at edges of the Schottky gate electrode, such that impurities are introduced into said compound semiconductor layer using said Schottky gate electrode as a mask, said Schottky gate electrode providing a Schottky contact on said compound semiconductor layer and having a barrier height and an ideality factor that are stable up to 850° C.
Claim 2
Dependent Claim
102 words
A Schottky gate field effect transistor, comprising: a compound semiconductor layer; a Schottky gate electrode of a refractory metal silicide including Mo on said compound semiconductor layer; and source and drain regions at both sides of said Schottky gate electrode, the source and drain regions having edges aligned at edges of the Schottky gate electrode, such that impurities are introduced into said compound semiconductor layer using said Schottky gate electrode as a mask, said Schottky gate electrode providing a Schottky contact on said compound semiconductor layer and having a barrier height and an ideality factor that are stable up to 850° C.
Claim 3
Dependent Claim
36 words
A Schottky gate field effect transistor as set forth in claim 1, wherein said source and drain regions have an impurity concentration peak at a predetermined depth from a surface of said source and drain regions.
Claim 4
Dependent Claim
27 words
A Schottky gate field effect transistor as set forth in claim 1, wherein said Schottky gate electrode is formed in direct contact with said compound semiconductor layer.
Claim 5
Dependent Claim
19 words
A Schottky gate field effect transistor as set forth in claim 1, wherein said compound semiconductor layer is GaAs.
Claim 6
Dependent Claim
45 words
A Schottky gate field effect transistor as set forth in claim 1, wherein a surface of said source and drain regions is at a level which is different from a level of a boundary portion located between said Schottky gate electrode and said semiconductor layer.
Claim 7
Dependent Claim
103 words
A Schottky gate field effect transistor, comprising: a compound semiconductor layer; a Schottky gate electrode of a refractory metal silicide including W on said compound semiconductor layer; and source and drain regions at both sides of said Schottky gate electrode, said source and drain regions having edges aligned at edges of said Schottky gate electrode such that impurities are introduced into said compound semiconductor layer while said Schottky gate electrode acts as a mask, said Schottky gate electrode providing a Schottky contact on said compound semiconductor layer and having a barrier height and an ideality factor that are stable up to 850° C.
Claim 8
Dependent Claim
103 words
A Schottky gate field effect transistor, comprising: a compound semiconductor layer; a Schottky gate electrode of a refractory metal silicide including W on said compound semiconductor layer; and source and drain regions at both sides of said Schottky gate electrode, said source and drain regions having edges aligned at edges of said Schottky gate electrode such that impurities are introduced into said compound semiconductor layer while said Schottky gate electrode acts as a mask, said Schottky gate electrode providing a Schottky contact on said compound semiconductor layer and having a barrier height and an ideality factor that are stable up to 850° C.
Claim 9
Dependent Claim
36 words
A Schottky gate field effect transistor as set forth in claim 6, wherein said source and drain regions have an impurity concentration peak at a predetermined depth from a surface of said source and drain regions.
Claim 10
Dependent Claim
27 words
A Schottky gate field effect transistor as set forth in claim 6, wherein said Schottky gate electrode is formed in direct contact with said compound semiconductor layer.
Claim 11
Dependent Claim
19 words
A Schottky gate field effect transistor as set forth in claim 6, wherein said compound semiconductor layer is GaAs.
Claim 12
Dependent Claim
45 words
A Schottky gate field effect transistor as set forth in claim 6, wherein a surface of said source and drain regions is at a level which is different from a level of a boundary portion located between said Schottky gate electrode and said semiconductor layer.
Claim 13
Dependent Claim
105 words
A Schottky gate field effect transistor, comprising: a compound semiconductor layer; a Schottky gate electrode of a refractory metal silicide including silicide of Ta on said compound semiconductor layer; and source and drain regions at both sides of said Schottky gate electrode, said source and drain regions having edges aligned at edges of said Schottky gate electrode such that impurities are introduced into said compound semiconductor layer while said Schottky gate electrode acts as a mask, said Schottky gate electrode providing a Schottky contact on said compound semiconductor layer and having a barrier height and an ideality factor that are stable up to 800° C.
Claim 14
Dependent Claim
105 words
A Schottky gate field effect transistor, comprising: a compound semiconductor layer; a Schottky gate electrode of a refractory metal silicide including silicide of Ta on said compound semiconductor layer; and source and drain regions at both sides of said Schottky gate electrode, said source and drain regions having edges aligned at edges of said Schottky gate electrode such that impurities are introduced into said compound semiconductor layer while said Schottky gate electrode acts as a mask, said Schottky gate electrode providing a Schottky contact on said compound semiconductor layer and having a barrier height and an ideality factor that are stable up to 800° C.
Claim 15
Dependent Claim
36 words
A Schottky gate field effect transistor as set forth in claim 11, wherein said source and drain regions have an impurity concentration peak at a predetermined depth from a surface of said source and drain regions.
Claim 16
Dependent Claim
27 words
A Schottky gate field effect transistor as set forth in claim 11, wherein said Schottky gate electrode is formed in direct contact with said compound semiconductor layer.
Claim 17
Dependent Claim
19 words
A Schottky gate field effect transistor as set forth in claim 11, wherein said compound semiconductor layer is GaAs.
Claim 18
Dependent Claim
45 words
A Schottky gate field effect transistor as set forth in claim 11, wherein a surface of said source and drain regions is at a level which is different from a level of a boundary portion located between said Schottky gate electrode and said semiconductor layer.
Claim 19
Dependent Claim
84 words
A Schottky gate field effect transistor, comprising: a compound semiconductor layer; a Schottky gate electrode of a refractory metal silicide including Mo on said compound semiconductor layer; and source and drain regions at both sides of said Schottky gate electrode, the source and drain regions having edges aligned at edges of the Schottky gate electrode, said Schottky gate electrode providing a Schottky contact on said compound semiconductor layer and having a barrier height and an ideality factor that are stable up to 850° C.
Claim 20
Dependent Claim
84 words
A Schottky gate field effect transistor, comprising: a compound semiconductor layer; a Schottky gate electrode of a refractory metal silicide including Mo on said compound semiconductor layer; and source and drain regions at both sides of said Schottky gate electrode, the source and drain regions having edges aligned at edges of the Schottky gate electrode, said Schottky gate electrode providing a Schottky contact on said compound semiconductor layer and having a barrier height and an ideality factor that are stable up to 850° C.
Claim 21
Dependent Claim
84 words
A Schottky gate field effect transistor, comprising: a compound semiconductor layer; a Schottky gate electrode of a refractory metal silicide including W on said compound semiconductor layer; and source and drain regions at both sides of said Schottky gate electrode, said source and drain regions having edges aligned at edges of said Schottky gate electrode, said Schottky gate electrode providing a Schottky contact on said compound semiconductor layer and having a barrier height and an ideality factor that are stable up to 850° C.
Claim 22
Dependent Claim
84 words
A Schottky gate field effect transistor, comprising: a compound semiconductor layer; a Schottky gate electrode of a refractory metal silicide including W on said compound semiconductor layer; and source and drain regions at both sides of said Schottky gate electrode, said source and drain regions having edges aligned at edges of said Schottky gate electrode, said Schottky gate electrode providing a Schottky contact on said compound semiconductor layer and having a barrier height and an ideality factor that are stable up to 850° C.
Claim 23
Dependent Claim
86 words
A Schottky gate field effect transistor, comprising: a compound semiconductor layer; a Schottky gate electrode of a refractory metal silicide including silicide of Ta on said compound semiconductor layer; and source and drain regions at both sides of said Schottky gate electrode, said source and drain regions having edges aligned at edges of said Schottky gate electrode, said Schottky gate electrode providing a Schottky contact on said compound semiconductor layer and having a barrier height and an ideality factor that are stable up to 800° C.
Claim 24
Dependent Claim
86 words
A Schottky gate field effect transistor, comprising: a compound semiconductor layer; a Schottky gate electrode of a refractory metal silicide including silicide of Ta on said compound semiconductor layer; and source and drain regions at both sides of said Schottky gate electrode, said source and drain regions having edges aligned at edges of said Schottky gate electrode, said Schottky gate electrode providing a Schottky contact on said compound semiconductor layer and having a barrier height and an ideality factor that are stable up to 800° C.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1999-07-16 | 2000-01-15 | 2000-07-16 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2003-07-16 | 2004-01-15 | 2004-07-16 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2007-07-16 | 2008-01-15 | 2008-07-16 | $7700.00 | Window Closed / Lapsed |