Schottky barrier gate type field effect transistor

Abstract

Abstract PURPOSE:To enable the self-alignment of a source and a drain in a microminiature structure by forming at least a part of an electrode connected directly to the diffused layers of the source and drain of a semiconductor substrate of high melting point metal silicide. CONSTITUTION:Mo and Si are simultaneously evaporated in vacuum on the entire surface of the epitaxial layer 2 of a semiconductor substrate 3, an MoSi film having a thickness of approx. 2,000Angstrom is coated thereon, is then patterned by a photoetching process with CF4 gas plasma as etching means, is brought into direct contact with the layer 2 through an opening 6, and a gate of electrode 7 of MoSi2 extended on an SiO2 film 5 is formed thereon. When a Schottky FET is formed by this means, since the gate electrode 7 is formed of the MoSi2, the source 8 and the drain 9 are self- aligned with respect to the gate electrode 7 to enable a microminiature structure.

Inventors

• 👤 Toru Mochizuki
• 👤 Yoshio Nishi

Bibliographic Details