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US5497350A
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Integrated semiconductor memory device capable of switching from a memory mode to an internal test mode
Assignee: Qimonda AG
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Filing: 1994-12-29
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Granted: 1996-03-05
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Expires: 2014-12-29
Abstract
Abstract A semiconductor memory is subdivided into a plurality of function units and has m leads addressable from outside, internal signal lines leading from the function units to the leads, internal signal lines connecting the function units with one another, and a test unit recognizing a test mode from a code word applied to k leads, where k≦m. A device switches over from a memory mode to the test mode. The test unit decouples at least one of the signal lines leading to the leads from an associated lead of the semiconductor memory and connects the lead to an internal signal line connecting the function units.
Inventors
- 👤 Peter Muhmenthaler
- 👤 Hans-Dieter Oberle
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 12:06
CPC Classifications
G; G11; G11C; G11C11/00; G11C11/21; G11C11/34; G11C11/40; G11C29/00; G11C29/04; G11C29/08; G11C29/12
Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
152 words
In a semiconductor memory being subdivided into a plurality of function units and having m leads addressable from outside, first internal signal lines leading from the function unite to the m leads, second internal signal lines connecting the function units with one another, and an internal test unit recognizing a test mode from a code word applied to k of said m leads, where k≦m, the improvement comprising means for switching over from a memory mode to the test mode, the test unit decoupling at least one of the first signal lines leading to the m leads from a respective one of the m leads and connecting the respective one of the m leads to one of the second internal signal lines connecting the function units, for testing one of the function units being connected via the second internal signal with the respective one of the m leads in the test mode.
Claim 2
Dependent Claim
152 words
In a semiconductor memory being subdivided into a plurality of function units and having m leads addressable from outside, first internal signal lines leading from the function unite to the m leads, second internal signal lines connecting the function units with one another, and an internal test unit recognizing a test mode from a code word applied to k of said m leads, where k≦m, the improvement comprising means for switching over from a memory mode to the test mode, the test unit decoupling at least one of the first signal lines leading to the m leads from a respective one of the m leads and connecting the respective one of the m leads to one of the second internal signal lines connecting the function units, for testing one of the function units being connected via the second internal signal with the respective one of the m leads in the test mode.
Claim 3
Dependent Claim
79 words
The semiconductor memory according to claim 1, wherein the semiconductor memory includes a data bus having data bus lines connected to said m leads; and including at least one multiplexer having an output connected to one of said data bus lines, a first input supplied with an internal signal necessary for the associated data bus line in the memory mode, and at least one second input each being connected to a respective one of said second internal signal lines.
Claim 4
Dependent Claim
21 words
The semiconductor memory according to claim 1, wherein said test unit generates signals necessary for testing one of said function units.
Claim 5
Dependent Claim
39 words
The semiconductor memory according to claim 1, having first connection pads and a second connection pad, and including means for supplying a signal to said second connection pad for switching over from the memory mode to the test mode.
Claim 6
Dependent Claim
28 words
The semiconductor memory according to claim 1, including means for applying another code word to said k of said m leads, where k≦m, for ending the test mode.
Claim 7
Dependent Claim
30 words
The semiconductor memory according to claim 1, including means for effecting an end of the test mode and a transition to the memory mode after a given number of cycles.
Claim 8
Dependent Claim
56 words
The semiconductor memory according to claim 1, wherein the code word is a first code word, and including means for selecting one of 2 n testable function units with a second code word present at n of said m leads, where n+k≦m, while the first code word is present at said k of said m leads.
Claim 9
Dependent Claim
22 words
The semiconductor memory according to claim 1, including means for switching over within a single cycle with respect to the memory mode.
Claim 10
Dependent Claim
39 words
The semiconductor memory according to claim 1, including means for switching on the test mode with said first code word in a first cycle, and subsequently selecting various function and test units in further cycles with second code words.
Claim 11
Dependent Claim
149 words
A semiconductor memory, comprising a plurality of function units subdividing the semiconductor memory, m leads addressable from outside the semiconductor memory, first internal signal lines leading from said function units to m said leads, second internal signal lines connecting said function units with one another, an internal test unit recognizing a test mode from a code word applied to k of the m leads, where k≦m, and means disposed in the semiconductor memory for switching over from a memory mode to the test mode, said test unit decoupling at least one of said first internal signal lines leading to said m leads from a respective one of said m leads in the test mode and connecting the respective one of said m leads to one of said second internal signal lines, for testing a respective one of said function units connected to the respective one of said m leads.
Claim 12
Dependent Claim
149 words
A semiconductor memory, comprising a plurality of function units subdividing the semiconductor memory, m leads addressable from outside the semiconductor memory, first internal signal lines leading from said function units to m said leads, second internal signal lines connecting said function units with one another, an internal test unit recognizing a test mode from a code word applied to k of the m leads, where k≦m, and means disposed in the semiconductor memory for switching over from a memory mode to the test mode, said test unit decoupling at least one of said first internal signal lines leading to said m leads from a respective one of said m leads in the test mode and connecting the respective one of said m leads to one of said second internal signal lines, for testing a respective one of said function units connected to the respective one of said m leads.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1999-03-05 | 1999-09-04 | 2000-03-05 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2003-03-05 | 2003-09-04 | 2004-03-05 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2007-03-05 | 2007-09-04 | 2008-03-05 | $7700.00 | Window Closed / Lapsed |