Semiconductor memory device having test mode and method of setting test mode

Claim 2

A semiconductor memory device, comprising: a memory cell array; internal circuit means responsive to a plurality of control signals for carrying out reading of data from said memory cell array and writing of data in said memory cell array; means responsive to a predetermined pattern of change of logic levels of at least several control signals out of said plurality of control signals for setting a test mode of said memory cell array; and reset pulse generating means responsive to power-on for generating a reset pulse setting at least said means for setting a test mode in an initial state over a variable period, said variable period defined by the timing of a change in logic level of one of said plurality of control signals.

Claim 3

The semiconductor memory device as recited in claim 1, wherein said reset pulse generating means includes means for defining said variable period so that said variable period always includes a period during which the predetermined pattern of change of logic levels of said several control signals required for setting of said test mode may take place.

Claim 4

A semiconductor memory device, comprising: a memory cell array; means responsive to a plurality of external control signals for generating a plurality of internal control signals; internal circuit means responsive to said plurality of internal control signals for carrying out reading of data from said memory cell array and writing of data in said memory cell array; means responsive to a predetermined pattern of change of logic levels of at least several internal control signals out of said plurality of internal control signals for setting a test mode of said memory cell array; first pulse generating means responsive to power-on for generating a first pulse having a constant duration; second pulse generating means responsive to power-on for generating a second pulse having a variable duration said variable duration defined by the timing of a change in logic level of an internal control signal of said at least several internal control signals or an external control signal corresponding thereto; and reset pulse generating means for generating a reset pulse corresponding to a logical OR of said first and second pulses to set at least said means for setting a test mode in an initial state during a duration of said reset pulse.

Claim 5

A semiconductor memory device, comprising: a memory cell array; means responsive to a plurality of external control signals for generating a plurality of internal control signals; internal circuit means responsive to said plurality of internal control signals for carrying out reading of data from said memory cell array and writing of data in said memory cell array; means responsive to a predetermined pattern of change of logic levels of at least several internal control signals out of said plurality of internal control signals for setting a test mode of said memory cell array; first pulse generating means responsive to power-on for generating a first pulse having a constant duration; second pulse generating means responsive to power-on for generating a second pulse having a variable duration said variable duration defined by the timing of a change in logic level of an internal control signal of said at least several internal control signals or an external control signal corresponding thereto; and reset pulse generating means for generating a reset pulse corresponding to a logical OR of said first and second pulses to set at least said means for setting a test mode in an initial state during a duration of said reset pulse.

Claim 6

The semiconductor memory device as recited in claim 3, wherein said second pulse generating means includes means for defining said variable duration of the second pulse so that said variable duration always includes a period during which the predetermined pattern of change of logic levels of said several internal control signals required for setting of said test mode may take place, when such a predetermined pattern of change may not take place within said constant duration of the first pulse.

Claim 7

A semiconductor memory device, comprising: a memory cell array; input circuit means responsive to an external row address strobe signal, an external column address strobe signal, and an external write enable signal for generating an internal row address strobe signal, an internal column address strobe signal, and an internal write enable signal; internal circuit means responsive to said internal row address strobe signal, said internal column address strobe signal, and said internal write enable signal for carrying out reading of data from said memory cell array and writing of data in said memory cell array; a test mode controller responsive to a predetermined pattern of change of logic levels of said internal row address strobe signal, said internal column address strobe signal, and said internal write enable signal for setting a test mode of said memory cell array; a first power-on-reset circuit responsive to power-on for generating a first pulse having a constant duration; a second power-on-reset circuit responsive to power-on for generating a second pulse having a variable duration which is defined based on a timing of change of a logic level of said external row address strobe signal; and a third power-on-reset circuit for generating a reset pulse corresponding to a logical OR of said first and second pulses to set at least said test mode controller in an initial state during a duration of said reset pulse.

Claim 8

A semiconductor memory device, comprising: a memory cell array; input circuit means responsive to an external row address strobe signal, an external column address strobe signal, and an external write enable signal for generating an internal row address strobe signal, an internal column address strobe signal, and an internal write enable signal; internal circuit means responsive to said internal row address strobe signal, said internal column address strobe signal, and said internal write enable signal for carrying out reading of data from said memory cell array and writing of data in said memory cell array; a test mode controller responsive to a predetermined pattern of change of logic levels of said internal row address strobe signal, said internal column address strobe signal, and said internal write enable signal for setting a test mode of said memory cell array; a first power-on-reset circuit responsive to power-on for generating a first pulse having a constant duration; a second power-on-reset circuit responsive to power-on for generating a second pulse having a variable duration which is defined based on a timing of change of a logic level of said external row address strobe signal; and a third power-on-reset circuit for generating a reset pulse corresponding to a logical OR of said first and second pulses to set at least said test mode controller in an initial state during a duration of said reset pulse.

Claim 9

A semiconductor memory device, comprising: a memory cell array; input circuit means responsive to an external row address strobe signal, an external column address strobe signal, and an external write enable signal for generating an internal row address strobe signal, an internal column address strobe signal, and an internal write enable signal; internal circuit means responsive to said internal row address strobe signal, said internal column address strobe signal, and said internal write enable signal for carrying out reading of data from said memory cell array and writing of data in said memory cell array; a test mode controller responsive to a predetermined pattern of change of logic levels of said internal row address strobe signal, said internal column address strobe signal, and said internal write enable signal for setting a test mode of said memory cell array; a first power-on-reset circuit responsive to power-on for generating a first pulse having a constant duration; a second power-on-reset circuit responsive to power-on for generating a second pulse having a variable duration which is defined based on a timing of change of a logic level of said internal row address strobe signal; and a third power-on-reset circuit for generating a reset pulse corresponding to a logical OR of said first and second pulses to set at least said test mode controller in an initial state during a duration of said reset pulse.

Claim 10

A semiconductor memory device, comprising: a memory cell array; input circuit means responsive to an external row address strobe signal, an external column address strobe signal, and an external write enable signal for generating an internal row address strobe signal, an internal column address strobe signal, and an internal write enable signal; internal circuit means responsive to said internal row address strobe signal, said internal column address strobe signal, and said internal write enable signal for carrying out reading of data from said memory cell array and writing of data in said memory cell array; a test mode controller responsive to a predetermined pattern of change of logic levels of said internal row address strobe signal, said internal column address strobe signal, and said internal write enable signal for setting a test mode of said memory cell array; a first power-on-reset circuit responsive to power-on for generating a first pulse having a constant duration; a second power-on-reset circuit responsive to power-on for generating a second pulse having a variable duration which is defined based on a timing of change of a logic level of said internal row address strobe signal; and a third power-on-reset circuit for generating a reset pulse corresponding to a logical OR of said first and second pulses to set at least said test mode controller in an initial state during a duration of said reset pulse.