Patent US5486449A successfully refreshed from Google Patents.
US5486449A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Photomask, photoresist and photolithography for a monolithic IC
Assignee: Rohm Co Ltd
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Filing: 1992-08-28
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Granted: 1996-01-23
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Expires: 2012-08-28
Abstract
Abstract A method for making a three dimensional structure of the aperture in a photoresist layer on a semiconductor substrate by differentiating dose of exposure light between parts of a photoresist layer. One example of the three dimensional structure is an overhang-platform structure; that is, one side wall of a narrow aperture has an overhang and the opposite side wall has a platform. By separately forming one photoresist layer segment having the overhang wall and the other photoresist layer segment having the platform wall, the distance between the edges of the overhang and the platform can be made smaller than the resolution limit of the photoresist material, which enables making a path line on a substrate whose width is smaller than the resolution limit. Many types of photoresist layers and photomasks for producing such photoresist layers are disclosed.
Inventors
- 👤 Hitoshi Hosono
- 👤 Satoru Takasugi
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 21:10
CPC Classifications
G; G03; G03F; G03F7/00; G03F7/26; G03F7/38; G03F1/00; G03F1/50; G03F7/20; G03F7/2022; G03F7/004; G03F7/09; G03F7/091
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
204 words
A photolithographic method for manufacturing a semiconductor device comprising: a step of applying photoresist onto a semiconductor substrate; a step of pre-baking said photoresist; a step of initially exposing said photoresist to light through a photomask, said photomask comprises a first part, a second part and a third part, each having different transparencies for exposing said photoresist, said first part being relatively opaque to said light, said second part being more transparent to said light than said first part, and said third part being more transparent to said light than said second part; a step of reversal-baking said photoresist; a step of flood-exposing said photoresist to light through another photomask positioned over an initially non-exposed region of the photoresist, said another photomask comprises a first part, a second part and a third part, each having different transparencies for exposing said photoresist, said first part being relatively opaque to said light, said second part being more transparent to said light than said first part, and said third part being more transparent to said light than said second part; and a step of developing said photoresist to form an aperture therein, said aperture having a platform and an overhang formed in a wall of said aperture.
Claim 2
Dependent Claim
204 words
A photolithographic method for manufacturing a semiconductor device comprising: a step of applying photoresist onto a semiconductor substrate; a step of pre-baking said photoresist; a step of initially exposing said photoresist to light through a photomask, said photomask comprises a first part, a second part and a third part, each having different transparencies for exposing said photoresist, said first part being relatively opaque to said light, said second part being more transparent to said light than said first part, and said third part being more transparent to said light than said second part; a step of reversal-baking said photoresist; a step of flood-exposing said photoresist to light through another photomask positioned over an initially non-exposed region of the photoresist, said another photomask comprises a first part, a second part and a third part, each having different transparencies for exposing said photoresist, said first part being relatively opaque to said light, said second part being more transparent to said light than said first part, and said third part being more transparent to said light than said second part; and a step of developing said photoresist to form an aperture therein, said aperture having a platform and an overhang formed in a wall of said aperture.
Claim 3
Dependent Claim
26 words
A photolithographic method according to claim 1, further comprising a step of depositing metals onto said substrate through said aperture having the platform and the overhang.
Claim 4
Dependent Claim
24 words
A photolithographic method according to claim 2, further comprising a step of removing said photoresist having the platform and the overhang from said substrate.
Claim 5
Dependent Claim
26 words
A photolithographic method according to claim 1, wherein said method is applied for etching of said substrate through said aperture having the platform and the overhang.
Claim 6
Dependent Claim
28 words
A photolithographic method according to claim 1, wherein said method is applied for implantation of ions into said substrate through said aperture having the platform and the overhang.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1999-01-22 | 1999-07-24 | 2000-01-23 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2003-01-22 | 2003-07-24 | 2004-01-23 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2007-01-22 | 2007-07-24 | 2008-01-23 | $7700.00 | Window Closed / Lapsed |