US4704347A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of manufacturing a semiconductor device, in which a photolacquer mask is formed by means of a two-layer lacquer system.
Assignee: US Philips Corp
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Filing: 1986-01-29
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Granted: 1987-11-03
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Expires: 2006-01-29
Abstract
Abstract A method of manufacturing a semiconductor device, in which there is applied to a surface of a semiconductor substrate a base layer of photosensitive lacquer, which is coated with a top layer of photosensitive lacquer. By means of a first patterned irradiation, there is formed in the top layer a mask of which a contact copy is formed in the base layer during a second irradiation. A material which can be discolored is used for the top layer. During the first irradiation, the top layer is locally discolored, whereupon the layer thus discolored is used as a mask during the second irradiation. By the use of the discoloring top layer, additional processing steps, which would ensure from a wet development of the top layer, are avoided.
Inventors
- 👤 Franciscus A. Vollenbroek
- 👤 Jan G. Dil
- 👤 Henricus J. J. Kroon
- 👤 Elisabeth J. Spiertz
- 👤 Wilhelmus P. M. Nijssen
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 06:32
CPC Classifications
G; G03; G03F; G03F7/00; G03F7/004; G03F7/09; G03F7/095
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
206 words
A method of manufacturing a semiconductor device comprising the steps of: (a) applying a base layer of a photosensitive lacquer to a surface of a semiconductor substrate; (b) applying to said base layer a top layer of a photosensitive lacquer, said top layer being discolorable by light radiation and consisting essentially of a solution of polystyrene in xylene containing as a light radiation discolorable composition a mixture of a first constituent selected from the group consisting of tetrabromomethane and a halogen-containing triazine derivative and a second constituent, said second constituent being an imine of the formula ##STR4## where R 1 is a parasubstituted aminophenyl, R 2 is hydrogen, alkyl or substituted phenyl and R 3 is hydrogen, alkyl or substituted phenyl, said first constituent being capable, upon exposure to light radiation, of producing a substance which is capable of reacting with said second constituent to produce a compound having a color different from that of said second constituent; (c) subjecting said top layer to patterned light radiation thereby discoloring said top layer in a patternwise manner and forming a mask for additional radiation of said base layer; and (d) subjecting said base layer to a patterned second radiation patterned by said mask in said top layer.
Claim 2
Independent Claim
206 words
A method of manufacturing a semiconductor device comprising the steps of: (a) applying a base layer of a photosensitive lacquer to a surface of a semiconductor substrate; (b) applying to said base layer a top layer of a photosensitive lacquer, said top layer being discolorable by light radiation and consisting essentially of a solution of polystyrene in xylene containing as a light radiation discolorable composition a mixture of a first constituent selected from the group consisting of tetrabromomethane and a halogen-containing triazine derivative and a second constituent, said second constituent being an imine of the formula ##STR4## where R 1 is a parasubstituted aminophenyl, R 2 is hydrogen, alkyl or substituted phenyl and R 3 is hydrogen, alkyl or substituted phenyl, said first constituent being capable, upon exposure to light radiation, of producing a substance which is capable of reacting with said second constituent to produce a compound having a color different from that of said second constituent; (c) subjecting said top layer to patterned light radiation thereby discoloring said top layer in a patternwise manner and forming a mask for additional radiation of said base layer; and (d) subjecting said base layer to a patterned second radiation patterned by said mask in said top layer.
Claim 3
Dependent Claim
36 words
A method as claimed in claim 1, characterized in that the first constituent is tetrabromomethane and in that in the second constituent R 1 is paradiethyl aminophenyl, R 2 is hydrogen and R 3 is paramethylphenyl.
Claim 4
Dependent Claim
39 words
A method as claimed in claim 2, characterized in that during the first irradiation non-irradiated parts of the top layer are made insensitive to radiation by a thermal treatment, during which tetrabromomethane is baked out of the top layer.
Claim 5
Dependent Claim
27 words
A method as claimed in claim 1 characterized in that the first patterned irradiation is carried out with radiation having a wavelength between 300 and 450 nm.
Claim 6
Dependent Claim
26 words
A method as claimed in claim 4, characterized in that the second irradiation is carried out with radiation having a wavelength between 300 and 400 nm.
Claim 7
Dependent Claim
26 words
A method as claimed in claim 4, characterized in that the second irradiation is carried out with radiation having a wavelength between 400 and 500 nm.
Claim 8
Dependent Claim
26 words
A method as claimed in claim 6, characterized in that the base layer consists of a photolacquer containing a novolak, to which a base is added.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1990-11-02 | 1991-05-04 | 1991-11-03 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1994-11-02 | 1995-05-04 | 1995-11-03 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1998-11-02 | 1999-05-04 | 1999-11-03 | $7700.00 | Window Closed / Lapsed |