US4533624A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of forming a low temperature multilayer photoresist lift-off pattern
Assignee: Unisys Corp
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Filing: 1983-05-23
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Granted: 1985-08-06
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Expires: 2003-05-23
Abstract
Abstract A novel multilayer lift-off pattern of positive and negative photoresist materials is provided. A positive first layer is deposited on a substrate and flood exposed before a subsequent layer of negative photoresist material is added on top of the positive photoresist material. An optional third layer of positive photoresist material may be added on top of the negative photoresist to provide the top layer. A window or aperture is provided in the top layer employing conventional mask, exposure and development techniques. The top of the bottom layer is plasma etched through the window or aperture so that the previously flood exposed bottom layer can be developed without affecting the layers deposited thereon. A deep undercut lift-off pattern is provided which is useful in the manufacture of Josephson junction devices employing low temperature metals as well as for the manufacture of semiconductor devices.
Inventors
- 👤 John E. Sheppard
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 21:34
CPC Classifications
G; G03; G03F; G03F7/00; G03F7/0035; G03F7/004; G03F7/09; G03F7/094; G03F7/095; G03F7/0955; G03F7/26; G03F7/40; H; H05; H05K; H05K3/00; H05K3/10; H05K3/14; H05K3/143; H10; H10N; H10N60/00; H10N60/01; H10N60/0912
Claims Analysis
Total Claims: 5
Claim 1
Independent Claim
163 words
A method of forming a low temperature multilayer photoresist lift-off pattern below 70° C. comprising: providing a substrate, applying a positive photoresist bottom layer on said substrate, soft baking below 70° C. said positive photoresist bottom layer, exposing said positive photoresist bottom layer, applying a negative photoresist intermediate layer on said bottom layer, providing a positive photoresist top layer on said intermediate layer, masking, exposing and developing said top layer to provide an accurate aperture in said top layer. plasma etching an extended accurate aperture through said intermediate layer and partially etching into said bottom layer to expose said bottom layer in said extended aperture, isotropically developing said exposed bottom layer of said positive photoresist for a predetermined amount of time to provide a laterally extending deep undercut lift-off pattern under said intermediate layer, and rinsing and drying said substrate and said three layers to provide a deep accurate three layer lift-off pattern for precise deposition of metal through said extended accurate aperture.
Claim 2
Independent Claim
163 words
A method of forming a low temperature multilayer photoresist lift-off pattern below 70° C. comprising: providing a substrate, applying a positive photoresist bottom layer on said substrate, soft baking below 70° C. said positive photoresist bottom layer, exposing said positive photoresist bottom layer, applying a negative photoresist intermediate layer on said bottom layer, providing a positive photoresist top layer on said intermediate layer, masking, exposing and developing said top layer to provide an accurate aperture in said top layer. plasma etching an extended accurate aperture through said intermediate layer and partially etching into said bottom layer to expose said bottom layer in said extended aperture, isotropically developing said exposed bottom layer of said positive photoresist for a predetermined amount of time to provide a laterally extending deep undercut lift-off pattern under said intermediate layer, and rinsing and drying said substrate and said three layers to provide a deep accurate three layer lift-off pattern for precise deposition of metal through said extended accurate aperture.
Claim 3
Dependent Claim
40 words
A method of forming a low temperature multilayer photoresist pattern as set forth in claim 1 wherein said step of plasma etching comprises etching through said negative photoresist material layer and etching only the top portion of said bottom layer.
Claim 4
Dependent Claim
47 words
A method of forming a low temperature multilayer photoresist pattern as set forth in claim 1 which further includes the steps of depositing a metal electrode layer on top of said substrate in said aperture and on said top layer, and removing said deep undercut lift-off pattern.
Claim 5
Dependent Claim
45 words
A method of forming a low temperature multilayer photoresist pattern as set forth in claim 3 wherein said step of depositing a metal electrode comprises isotropically depositing said metal electrode to provide a gradual slope change at the edges which extends under said lift-off pattern.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1988-08-05 | 1989-02-04 | 1989-08-06 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1992-08-05 | 1993-02-04 | 1993-08-06 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1996-08-05 | 1997-02-04 | 1997-08-06 | $7700.00 | Window Closed / Lapsed |