US5459101A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method for fabricating a semiconductor device comprising a polycide structure
Assignee: Panasonic Holdings Corp
•
Filing: 1994-06-27
•
Granted: 1995-10-17
•
Expires: 2014-06-27
Abstract
Abstract A semiconductor device comprising a semiconductor substrate, an insulating film formed on the semiconductor substrate, and a polycide film including a polysilicon layer and a silicide layer formed on the insulating film. The polysilicon layer includes a p-type region having p-type impurities diffused therein and an n-type region having n-type impurities diffused therein. The p-type impurities are implanted into the silicide layer in order to have a substantially uniform concentration over the entire portion thereof, so that the p-type impurities in the p-type region of the polysilicon layer do not diffuse into the silicide film by a post heat treatment.
Inventors
- 👤 Toyokazu Fujii
- 👤 Yasushi Naito
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-02 20:25
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/064; H10W20/066; H10D; H10D64/00; H10D64/01; H10D64/013; H10D64/01302; H10D64/01304; H10D64/01306; H10D64/01308; H10D64/01312; H10D84/00; H10D84/01; H10D84/0123; H10D84/0126; H10D84/0165; H10D84/0172; H10D84/0177; H10D84/02; H10D84/03; H10D84/038; H10W20/40; H10W20/41; H10W20/44; H10W20/4451
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
93 words
A method for fabricating a semiconductor device comprising the steps of: forming an insulating film on a semiconductor substrate; forming a polysilicon layer on said insulating film; forming a p-type region and an n-type region in said polysilicon layer; forming a silicide layer on said polysilicon layer so as to form a polycide film, said silicide layer including a metal selected from a group consisting of tungsten, titanium and molybdenum; and implanting p-type impurities into the entire silicide layer so that said p-type impurities are substantially uniformly distributed in the entire silicide layer.
Claim 2
Independent Claim
93 words
A method for fabricating a semiconductor device comprising the steps of: forming an insulating film on a semiconductor substrate; forming a polysilicon layer on said insulating film; forming a p-type region and an n-type region in said polysilicon layer; forming a silicide layer on said polysilicon layer so as to form a polycide film, said silicide layer including a metal selected from a group consisting of tungsten, titanium and molybdenum; and implanting p-type impurities into the entire silicide layer so that said p-type impurities are substantially uniformly distributed in the entire silicide layer.
Claim 3
Dependent Claim
29 words
A method according to claim 1, wherein the concentration of said p-type impurities in said silicide layer is higher than that in said p-type region of said polysilicon layer.
Claim 4
Dependent Claim
12 words
A method according to claim 1, wherein said p-type impurities are boron.
Claim 5
Dependent Claim
29 words
A method according to claim 1, further comprising the step of forming a transistor on said semiconductor substrate using a portion of said polycide film as a gate electrode.
Claim 6
Dependent Claim
37 words
A method according to claim 1, further comprising the step of forming an impurity diffusion region in said semiconductor substrate so that said impurity diffusion region is in contact with said polysilicon layer of said polycide film.
Claim 7
Independent Claim
96 words
A method for fabricating a semiconductor device comprising the steps of: forming an insulating film on a semiconductor substrate; forming a polysilicon layer on said insulating film; forming a p-type region and an n-type region in said polysilicon layer; forming a silicide layer on said polysilicon layer so as to form a polycide film, said silicide layer including a metal selected from a group consisting of tungsten, titanium and molybdenum; and implanting p-type impurities into all of said silicide layer except a portion of said silicide layer located on said p-type region of said polysilicon layer.
Claim 8
Independent Claim
96 words
A method for fabricating a semiconductor device comprising the steps of: forming an insulating film on a semiconductor substrate; forming a polysilicon layer on said insulating film; forming a p-type region and an n-type region in said polysilicon layer; forming a silicide layer on said polysilicon layer so as to form a polycide film, said silicide layer including a metal selected from a group consisting of tungsten, titanium and molybdenum; and implanting p-type impurities into all of said silicide layer except a portion of said silicide layer located on said p-type region of said polysilicon layer.
Claim 9
Dependent Claim
12 words
A method according to claim 6, wherein said p-type impurities are boron.
Claim 10
Dependent Claim
29 words
A method according to claim 6, further comprising the step of forming a transistor on said semiconductor substrate using a portion of said polycide film as a gate electrode.
Claim 11
Dependent Claim
37 words
A method according to claim 6, further comprising the step of forming an impurity diffusion region in said semiconductor substrate so that said impurity diffusion region is in contact with said polysilicon layer of said polycide film.
References Cited (Backward Citations)
JPS57192079A
Cited
US4703552A
Cited
US4640844A
Cited
US4985746A
Cited
US5086006A
Cited
US4597163A
Cited
JPS61225838A
Cited
US4786611A
Cited
JPH01205417A
Cited
JPH01265542A
Cited
US4876213A
Cited
JPH02192161A
Cited
US5032537A
Cited
JPH0341762A
Cited
US5190880A
Cited
JPH04150019A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1998-10-16 | 1999-04-17 | 1999-10-17 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2002-10-16 | 2003-04-17 | 2003-10-17 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2006-10-16 | 2007-04-17 | 2007-10-17 | $7700.00 | Window Closed / Lapsed |