US4597163A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of improving film adhesion between metallic silicide and polysilicon in thin film integrated circuit structures
Assignee: Zilog Inc
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Filing: 1984-12-21
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Granted: 1986-07-01
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Expires: 2004-12-21
Abstract
Abstract A method of improving film adhesion during the fabrication of thin film integrated circuits is disclosed. The method includes the steps of depositing a metallic silicide on a substrate and then implanting selected ions at predetermined doses and energies into the silicide layer, whereby tensile stress generated during fabrication processes is reduced. In one embodiment of the invention, the substrate is provided with a polycrystalline silicon layer and the silicide is of the structure MSix, where M is a refractory metal and x is greater than 2. Preferred doses range from 1015 to 1017 cm-2, while preferred energies range from 40 to 150 keV.
Inventors
- 👤 Juine-Kai Tsang
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-24 16:37
CPC Classifications
H; H10; H10D; H10D64/00; H10D64/01; H10D64/013; H10D64/01302; H10D64/01304; H10D64/01306; H10D64/01308; H10D64/01312; H10P; H10P32/00; H10P32/30; H10P32/302; Y; Y10; Y10S; Y10S148/00; Y10S148/14
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
82 words
A method of improving film adhesion between polysilicon and metallic silicide layers during the fabrication of thin film integrated circuits, comprising the steps of: providing a substrate having a polycrystalline silicon surface layer; depositing a metallic silicide film on said substrate; implanting in said silicide film a predetermined dose of selected ions at a predetermined energy; and maintaining said implanted ions in said silicide film during subsequent processing steps, whereby during subsequent heat treatment tensile stress in said silicide film is reduced.
Claim 2
Independent Claim
82 words
A method of improving film adhesion between polysilicon and metallic silicide layers during the fabrication of thin film integrated circuits, comprising the steps of: providing a substrate having a polycrystalline silicon surface layer; depositing a metallic silicide film on said substrate; implanting in said silicide film a predetermined dose of selected ions at a predetermined energy; and maintaining said implanted ions in said silicide film during subsequent processing steps, whereby during subsequent heat treatment tensile stress in said silicide film is reduced.
Claim 3
Dependent Claim
30 words
The method of claim 1, wherein said metallic silicide is a compound of the structure MSi x , where M is a refractory metal and x is greater than 2.
Claim 4
Dependent Claim
19 words
The method of claim 1, wherein said ions are selected from the group consisting of phosphorus, arsenic and boron.
Claim 5
Dependent Claim
18 words
The method of claim 1, wherein said dose ranges from 10 15 to 10 17 cm -2 .
Claim 6
Dependent Claim
15 words
The method of claim 1, wherein said ionic energy ranges from 0 to 300 keV.
Claim 7
Dependent Claim
20 words
The method of claim 1, wherein said heat treatment comprises maintaining said substrates at temperatures greater than 800 degrees Centigrade.
Claim 8
Dependent Claim
28 words
The method of claim 2, wherein M is selected from the group consisting of tungsten, titanium, tantalum and molybdenum, and x ranges from about 2.2 to about 2.6.
Claim 9
Dependent Claim
18 words
The method of claim 4, wherein said dose ranges from 5×10 15 to 3×10 16 cm -2 .
Claim 10
Dependent Claim
15 words
The method of claim 5, wherein said ionic energy ranges from 40 to 150 keV.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1989-06-30 | 1989-12-30 | 1990-07-01 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1993-06-30 | 1993-12-30 | 1994-07-01 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1997-06-30 | 1997-12-30 | 1998-07-01 | $7700.00 | Window Closed / Lapsed |