US4446476A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Integrated circuit having a sublayer electrical contact and fabrication thereof
Assignee: International Business Machines Corp
•
Filing: 1981-06-30
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Granted: 1984-05-01
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Expires: 2001-06-30
Abstract
Abstract An integrated circuit containing a refractory metallic silicide beneath a field isolation region and in electrical contact with electrical conductive regions of active impurity dopants in a semiconductive substrate; and process for the fabrication thereof.
Inventors
- 👤 Randall D. Isaac
- 👤 Tak H. Ning
- 👤 Denny D. Tang
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-24 01:03
CPC Classifications
H; H10; H10D; H10D62/00; H10D62/10; H10D62/102; H10D62/112; H10W; H10W10/00; H10W10/01; H10W10/011; H10W10/012; H10W10/014; H10W10/0148; H10W10/10; H10W10/13; H10W10/17; H10W20/00; H10W20/01; H10W20/021; H10W20/20
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
51 words
An integrated circuit containing a semiconductive substrate having field isolation regions and electrical conductive regions of active impurity dopants wherein the improvement comprises a refractory metallic silicide entirely located beneath field isolation regions and having its entire lower surface in direct electrical contact with electrical conductive regions of active impurity dopants.
Claim 2
Dependent Claim
51 words
An integrated circuit containing a semiconductive substrate having field isolation regions and electrical conductive regions of active impurity dopants wherein the improvement comprises a refractory metallic silicide entirely located beneath field isolation regions and having its entire lower surface in direct electrical contact with electrical conductive regions of active impurity dopants.
Claim 3
Dependent Claim
27 words
The integrated circuit of claim 1 wherein said refractory metallic silicide is selected from the group of tungsten, tantalum, niobium, molybdenum, hafnium, cobalt, vanadium, or mixtures thereof.
Claim 4
Dependent Claim
23 words
The integrated circuit of claim 1 wherein said metallic silicide is selected from the group of silicides of tungsten, tantalum, or mixtures thereof.
Claim 5
Dependent Claim
12 words
The integrated circuit of claim 1 wherein said silicide is tungsten silicide.
Claim 6
Dependent Claim
12 words
The integrated circuit of claim 1 wherein said silicide is tantalum silicide.
Claim 7
Dependent Claim
13 words
The integrated circuit of claim 1 wherein said field isolation is silicon dioxide.
Claim 8
Dependent Claim
11 words
The integrated circuit of claim 1 which is a bipolar device.
Claim 9
Dependent Claim
11 words
The integrated circuit of claim 1 which is a MOS device.
References Cited (Backward Citations)
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1987-05-01 | 1987-10-31 | 1988-05-01 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1991-05-01 | 1991-10-31 | 1992-05-01 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1995-05-01 | 1995-10-31 | 1996-05-01 | $7700.00 | Window Closed / Lapsed |