US3659162A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor integrated circuit device having improved wiring layer structure
Assignee: NEC Corp
•
Filing: 1969-12-19
•
Granted: 1972-04-25
•
Expires: 1989-12-19
Abstract
Abstract A semiconductor integrated circuit is disclosed having at least one buried layer formed of a high impurity concentration buried layer or a conductive film formed beneath the epitaxial single crystal and polycrystal regions.
Inventors
- 👤 Wada Toshio
- 👤 Nakanuma Sho
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-23 04:53
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/20; H10D; H10D84/00; H10D84/60; H10D84/611; H10D84/613; H10D84/615; H10P; H10P95/00; H10P95/50; H10W10/00; H10W10/01; H10W10/011; H10W10/10; Y; Y10; Y10S; Y10S148/00; Y10S148/085; Y10S148/122; Y10S148/135
Claims Analysis
Total Claims: 1
Claim 1
Independent Claim
28 words
The semiconductor integrated circuit device claimed in claim 1, in which said buried conductive layers are each formed of a highly doped layer of said opposite conductivity type.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1975-04-25 | 1975-10-25 | 1976-04-25 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1979-04-25 | 1979-10-25 | 1980-04-25 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1983-04-25 | 1983-10-25 | 1984-04-25 | $7700.00 | Window Closed / Lapsed |