US4468308A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Metallic silicide production
Assignee: Micron Technology Inc
•
Filing: 1983-02-03
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Granted: 1984-08-28
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Expires: 2003-02-03
Abstract
Abstract A metallic silicide layer is formed on a substrate by pulse heating, in an inert atmosphere, metal and silicon deposited on the substrate to a temperature and for a time sufficient to cause interdiffusion of the metal and silicon.
Inventors
- 👤 Peter D. Scovell
- 👤 Paul J. Rosser
- 👤 Gary J. Tomkins
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-25 20:49
CPC Classifications
H; H10; H10D; H10D64/00; H10D64/01; H10D64/013; H10D64/01302; H10D64/01304; H10D64/01318; H10D64/0132; C; C23; C23C; C23C26/00; H10P; H10P95/00; H10P95/90
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
65 words
A method of forming a metallic silicide layer on a substrate, including the steps of depositing the metal and silicon on the substrate, and subsequently pulse heating the substrate, in an inert atmosphere, to a temperature and in a time sufficient to cause interdiffusion of the metal and silicon to form a homogenous layer and reaction of the constituents thereof to form the metallic silicide.
Claim 2
Independent Claim
65 words
A method of forming a metallic silicide layer on a substrate, including the steps of depositing the metal and silicon on the substrate, and subsequently pulse heating the substrate, in an inert atmosphere, to a temperature and in a time sufficient to cause interdiffusion of the metal and silicon to form a homogenous layer and reaction of the constituents thereof to form the metallic silicide.
Claim 3
Dependent Claim
28 words
A method as claimed in claim 1, wherein the step of depositing the metal and silicon comprises depositing alternate layers of the metal and silicon on the substrate.
Claim 4
Dependent Claim
25 words
A method as claimed in claim 1, wherein the step of depositing the metal and silicon comprises co-sputtering the metal and silicon on the substrate.
Claim 5
Independent Claim
16 words
A method as claimed in any one of the preceding claims wherein the metal is titanium.
Claim 6
Dependent Claim
44 words
A method as claimed in claim 2, wherein the metal is titanium, and wherein the substrate is pulse heated to a temperature greater than 900° C. within a time of the order of 10 seconds, whereby to form titanium silicide throughout the homogenous layer.
Claim 7
Dependent Claim
41 words
A method as claimed in claim 2, wherein the metal is titanium, and wherein the substrate is successively pulse heated a plurality of times to a temperature greater than 600° C. but less than 900° C., whereby to form titanium silicide.
Claim 8
Dependent Claim
31 words
A method as claimed in claim 1, wherein the substrate is a semiconductor body and wherein the metallic silide provides electrodes for or interconnections between doped regions in the semiconductor body.
Claim 9
Dependent Claim
27 words
A method as claimed in claim 7, wherein the pulse heating to form the metallic silicide serves also to activate or reactivate dopants in the semiconductor body.
Claim 10
Dependent Claim
14 words
A method as claimed in claim 7 or 8, wherein the semiconductor is silicon.
Claim 11
Dependent Claim
13 words
A method as claimed in claim 1, wherein the inert atmosphere comprises nitrogen.
References Cited (Backward Citations)
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1987-08-28 | 1988-02-27 | 1988-08-28 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1991-08-28 | 1992-02-27 | 1992-08-28 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1995-08-28 | 1996-02-27 | 1996-08-28 | $7700.00 | Window Closed / Lapsed |