Patent US5417826A successfully refreshed from Google Patents.
US5417826A
Expired / Lapsed
US
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Removal of carbon-based polymer residues with ozone, useful in the cleaning of plasma reactors
Assignee: Micron Technology Inc
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Filing: 1992-06-15
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Granted: 1995-05-23
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Expires: 2012-06-15
Abstract
Abstract A method for removing carbon-based polymer residues to effect a cleaning of a reactor, such as a planar plasma reactor, by exciting an ozone containing atmosphere in the reactor, which atmosphere is reactive with the carbon-based residues thereby forming volatile end products, which end products can be evacuated from the reactor.
Inventors
- 👤 Guy T. Blalock
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 03:48
CPC Classifications
H; H10; H10P; H10P72/00; H10P72/04; H10P72/0402; H10P72/0418; H10P72/0421; B; B08; B08B; B08B7/00; B08B7/0035; B08B7/0064; B08B7/0071; C; C23; C23G; C23G5/00; B08B2220/00; B08B2220/04; Y; Y10; Y10S; Y10S422/00; Y10S422/906
Claims Analysis
Total Claims: 22
Claim 1
Independent Claim
111 words
A process for removing carbon-based residues from surfaces of a reactor, the process comprising the following steps of: introducing a flow of gases comprising ozone into the reactor, which ionizes in an RF electric field to form oxygen molecules and elemental oxygen, wherein said ozone is generated from oxygen in a concentration of approximately 1-4 percent by molecular weight of total gas flow through the reactor; exciting an atmosphere by establishing an RF electric field to form a plasma in the reactor, said ozone containing plasma being reactive with the carbon-based residues on the surface of the reactor, thereby forming volatile end products; evaluating said volatile end products from the reactor.
Claim 2
Dependent Claim
111 words
A process for removing carbon-based residues from surfaces of a reactor, the process comprising the following steps of: introducing a flow of gases comprising ozone into the reactor, which ionizes in an RF electric field to form oxygen molecules and elemental oxygen, wherein said ozone is generated from oxygen in a concentration of approximately 1-4 percent by molecular weight of total gas flow through the reactor; exciting an atmosphere by establishing an RF electric field to form a plasma in the reactor, said ozone containing plasma being reactive with the carbon-based residues on the surface of the reactor, thereby forming volatile end products; evaluating said volatile end products from the reactor.
Claim 3
Dependent Claim
18 words
The process according to claim 1, wherein said ozone is provided into the reactor at approximately 50-500 sccm.
Claim 4
Dependent Claim
14 words
The process according to claim 2, wherein the carbon-based residue is a fluorocarbon residue.
Claim 5
Dependent Claim
30 words
The process according to claim 3, wherein the process is performed by said establishment of an RF electric field to form a plasma in the reactor for approximately 15-30 minutes.
Claim 6
Dependent Claim
16 words
The process according to claim 4, further comprising enhancing said plasma further with fluorine containing gas.
Claim 7
Dependent Claim
99 words
A process for cleaning a reaction chamber, said process comprising the steps of: providing a first atmosphere in the reaction chamber by introducing gases, said first atmosphere containing ozone; exciting said first atmosphere to form a first plasma, said first plasma for cleaning the reaction chamber thereby creating a flowable residue; increasing pressure on said first atmosphere thereby creating a second atmosphere; exciting said second atmosphere to form a second plasma, said second plasma for further cleaning the reaction chamber thereby creating more of said flowable residue; and removing said flowable residue from the reaction chamber through a pump.
Claim 8
Dependent Claim
99 words
A process for cleaning a reaction chamber, said process comprising the steps of: providing a first atmosphere in the reaction chamber by introducing gases, said first atmosphere containing ozone; exciting said first atmosphere to form a first plasma, said first plasma for cleaning the reaction chamber thereby creating a flowable residue; increasing pressure on said first atmosphere thereby creating a second atmosphere; exciting said second atmosphere to form a second plasma, said second plasma for further cleaning the reaction chamber thereby creating more of said flowable residue; and removing said flowable residue from the reaction chamber through a pump.
Claim 9
Dependent Claim
29 words
The process according to claim 6, wherein said first atmosphere has a pressure within approximately 100-500 mTorr, with a power density of plasma of approximately 1-5 W/cm 2 .
Claim 10
Dependent Claim
32 words
The process according to claim 7, wherein said second atmosphere has a pressure within approximately 500 mTorr to 10 Torr, with a power density of plasma of approximately 1-5 W/cm 2 .
Claim 11
Dependent Claim
18 words
The process according to claim 8, wherein said ozone is provided at a flow of approximately 50-500 sccm.
Claim 12
Dependent Claim
28 words
The process according to claim 9, wherein said ozone is generated from oxygen, said ozone comprising approximately 1-4% by molecular weight of total gas flow through the reactor.
Claim 13
Dependent Claim
25 words
The process according to claim 10, wherein said first atmosphere and said second atmosphere are excited at a radio frequency (RF) of approximately 13.56 MHz.
Claim 14
Dependent Claim
22 words
The process according to claim 11, wherein said reactor has a power electrode, said first atmosphere being for cleaning said power electrode.
Claim 15
Dependent Claim
22 words
The process according to claim 12, wherein said reactor has grounded components, said second atmosphere being for cleaning of said grounded components.
Claim 16
Independent Claim
108 words
A method for cleaning a planar plasma reactor chamber, comprising the following steps: providing a plasma etch reactor, said reactor having an interior and an exterior, said interior of said reactor being covered with a residue, said residue being a carbon-based polymer; introducing a flow of gases into the reactor, said flow consisting of a mixture of oxygen and ozone and at least one of NF 3 and CF 4 into the planar plasma reactor, thereby creating an atmosphere; exciting a plasma in said atmosphere, said plasma being reactive, said plasma reacting with said carbon-based polymer to form volatile end products; and evacuating said interior of said reactor.
Claim 17
Independent Claim
108 words
A method for cleaning a planar plasma reactor chamber, comprising the following steps: providing a plasma etch reactor, said reactor having an interior and an exterior, said interior of said reactor being covered with a residue, said residue being a carbon-based polymer; introducing a flow of gases into the reactor, said flow consisting of a mixture of oxygen and ozone and at least one of NF 3 and CF 4 into the planar plasma reactor, thereby creating an atmosphere; exciting a plasma in said atmosphere, said plasma being reactive, said plasma reacting with said carbon-based polymer to form volatile end products; and evacuating said interior of said reactor.
Claim 18
Dependent Claim
24 words
The method according to claim 14, wherein said atmosphere is excited by an RF electric field, said RF electric field being approximately 13.56 MHz.
Claim 19
Dependent Claim
26 words
The method according to claim 15, wherein said at least one of NF 3 and CF 4 are flowed into said reactor at approximately 10-100 sccm.
Claim 20
Dependent Claim
18 words
The method according to claim 16, wherein said ozone is flowed into said reactor at approximately 50-500 sccm.
Claim 21
Dependent Claim
23 words
The method according to claim 17, wherein said ozone comprises approximately 1-4 percent by molecular weight of total gas flow through the reactor.
Claim 22
Dependent Claim
36 words
The method according to claim 18, wherein said ozone ionizes in said RF electric field to form O 2 and 0 - , said O - reacting with said carbon-based polymer thereby forming said volatile residue.
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