US4721664A — Silicon film deposition from mixture of silanes

Claim 1

Independent Claim 209 words

A process for producing a photoconductive member, which comprises forming a photoconductive layer on a substrate for formation of a photoconductive layer by introducing starting substances for formation of a photoconductive layer under gaseous state into a deposition chamber maintained under a desired reduced pressure and exciting discharging under the gas atmosphere of said starting substances, characterized in that said starting substances are constituted of at least two compounds selected from the group consisting of the compounds of the formula: Si.sub.n H.sub.2n+2 (A) wherein n is a positive integer and the compounds of the formula: Si.sub.m H.sub.l X.sub.k (B) wherein m and k are positive integers, l is 0 or a positive integer, l+k=2m+2, and X represents a halogen atom, n and m being called "order number" hereinafter, and said starting substances to be introduced into said deposition chamber being controlled in amounts such that the proportion of the total of high order compounds is from about 20-99 vol.% based on the total of the minimum order compounds, the minimum order compound being one whose order number is the minimum among order numbers of said at least two compounds, the high order compound being one whose order number is higher than the order number of the minimum order compound.

Claim 2

Dependent Claim 209 words

A process for producing a photoconductive member, which comprises forming a photoconductive layer on a substrate for formation of a photoconductive layer by introducing starting substances for formation of a photoconductive layer under gaseous state into a deposition chamber maintained under a desired reduced pressure and exciting discharging under the gas atmosphere of said starting substances, characterized in that said starting substances are constituted of at least two compounds selected from the group consisting of the compounds of the formula: Si.sub.n H.sub.2n+2 (A) wherein n is a positive integer and the compounds of the formula: Si.sub.m H.sub.l X.sub.k (B) wherein m and k are positive integers, l is 0 or a positive integer, l+k=2m+2, and X represents a halogen atom, n and m being called "order number" hereinafter, and said starting substances to be introduced into said deposition chamber being controlled in amounts such that the proportion of the total of high order compounds is from about 20-99 vol.% based on the total of the minimum order compounds, the minimum order compound being one whose order number is the minimum among order numbers of said at least two compounds, the high order compound being one whose order number is higher than the order number of the minimum order compound.

Claim 3

Dependent Claim 59 words

A process according to claim 1 wherein the compound represented by the formula (A) is selected from the group consisting of SiH 4 , Si 2 H 6 , Si 3 H 8 , Si 4 H 10 , Si 5 H 12 , Si 6 H 14 , Si 7 H 16 and Si 8 H 18 .

Claim 4

Dependent Claim 52 words

A process according to claim 1 wherein the compound represented by the formula (B) is selected from the group consisting of SiX 4 , Si 2 X 6 , Si 3 X 8 , SiHX 3 , SiH 2 X 2 and SiH 3 X (where X is F, Cl, Br, I).

Claim 5

Dependent Claim 55 words

A process according to claim 1 wherein the high compound is at least one selected from the group consisting of Si 2 H 6 , Si 3 H 8 and Si 4 H 10 , or the group consisting of Si 2 F 6 , Si 2 Cl 6 and Si 3 Br 8 .

Claim 6

Dependent Claim 29 words

A process according to claim 1 wherein the starting substance further contains a material for incorporation of an impurity which controls the conduction type of the photoconductive layer formed.

Claim 7

Dependent Claim 13 words

A process according to claim 5 wherein the impurity is a n-type impurity.

Claim 8

Dependent Claim 13 words

A process according to claim 5 wherein the impurity is a p-type impurity.

Claim 9

Dependent Claim 102 words

A process according to claim 5 wherein the impurity is at least one selected from the group consisting of PH 3 , P 2 H 4 , PF 3 , PF 5 , PCl 3 , AsH 3 , AsF 3 , AsF 5 , AsCl 3 , SbH 3 , SbF 3 , SbF 5 , BiH 3 , BF 3 , BCl 3 , BBr 3 , B 2 H 6 , B 4 H 10 , B 5 H 9 , B 5 H 11 , B 6 H 10 , B 6 H 12 and AlCl 3 .

Claim 10

Dependent Claim 22 words

A process according to claim 1 wherein the starting substances contain at least two kinds of compounds represented by the formula (A).

Claim 11

Dependent Claim 22 words

A process according to claim 1 wherein the starting substances contain at least two kinds of compounds represented by the formula (B).

Claim 12

Dependent Claim 34 words

A process according to claim 1 wherein the starting substances contain at least two kinds of compounds represented by the formula (A) and at least one kind of compounds represented by the formula (B).

Claim 13

Dependent Claim 34 words

A process according to claim 1 wherein the starting substances contain at least one kind of compounds represented by the formula (A) and at least two kinds of compounds represented by the formula (B).

Claim 14

Dependent Claim 129 words

In a process for producing a photoconductive member comprising forming a photoconductive layer on a substrate suitable for forming a photoconductive layer by introducing starting substances for forming a photoconductive layer under gaseous conditions into a deposition chamber maintained under a preselected reduced pressure and thereafter exciting discharging in the gaseous atmosphere of said starting substances, the improvement which comprises employing as the substances at least two compounds selected from the group consisting of monosilane and a compound of the formula: Si.sub.n H.sub.2n+2 wherein n is a positive integer from 2-8 and wherein the starting substances are introduced into said deposition chamber in amounts sufficient that the proportion of Si n H 2n+2 is from about 20 to 99 volume percent based on the total of the starting substances.

Claim 15

Dependent Claim 129 words

In a process for producing a photoconductive member comprising forming a photoconductive layer on a substrate suitable for forming a photoconductive layer by introducing starting substances for forming a photoconductive layer under gaseous conditions into a deposition chamber maintained under a preselected reduced pressure and thereafter exciting discharging in the gaseous atmosphere of said starting substances, the improvement which comprises employing as the substances at least two compounds selected from the group consisting of monosilane and a compound of the formula: Si.sub.n H.sub.2n+2 wherein n is a positive integer from 2-8 and wherein the starting substances are introduced into said deposition chamber in amounts sufficient that the proportion of Si n H 2n+2 is from about 20 to 99 volume percent based on the total of the starting substances.

Claim 16

Dependent Claim 173 words

In a process for producing a photoconductive member comprising forming a photoconductive layer on a substrate suitable for forming a photoconductive layer by introducing starting substances for forming a photoconductive layer under gaseous conditions into a deposition chamber maintained under a preselected reduced pressure and thereafter exciting discharging in the gaseous atmosphere of said starting substances, the improvement which comprises employing as the substances at least two compounds selected from the group consisting of the compounds of the formula: SiH.sub.p X.sub.q wherein p is 0 or a positive integer, q is a positive integer and p+q is 4, and the compounds of the formula: Si.sub.r H.sub.s X.sub.t wherein r is a positive integer of at least 2, s is 0 or a positive integer, t is a positive integer, and t+s=2r+2, X is halogen and wherein the starting substances are introduced into the deposition chamber in sufficient amounts such that the proportion of Si r H s X t is from about 20-99 volume percent based on the total of said starting substances.

Claim 17

Dependent Claim 173 words

In a process for producing a photoconductive member comprising forming a photoconductive layer on a substrate suitable for forming a photoconductive layer by introducing starting substances for forming a photoconductive layer under gaseous conditions into a deposition chamber maintained under a preselected reduced pressure and thereafter exciting discharging in the gaseous atmosphere of said starting substances, the improvement which comprises employing as the substances at least two compounds selected from the group consisting of the compounds of the formula: SiH.sub.p X.sub.q wherein p is 0 or a positive integer, q is a positive integer and p+q is 4, and the compounds of the formula: Si.sub.r H.sub.s X.sub.t wherein r is a positive integer of at least 2, s is 0 or a positive integer, t is a positive integer, and t+s=2r+2, X is halogen and wherein the starting substances are introduced into the deposition chamber in sufficient amounts such that the proportion of Si r H s X t is from about 20-99 volume percent based on the total of said starting substances.

Claim 18

Dependent Claim 207 words

In a process for producing a photoconductive member comprising forming a photoconductive layer on a substrate suitable for forming a photoconductive layer by introducing starting substances for forming a photoconductive layer under gaseous conditions into a deposition chamber maintained under a preselected reduced pressure and thereafter exciting discharging in the gaseous atmosphere of said starting substances, the improvement which comprises employing as the starting substances at least two compounds selected from the group consisting of the compounds of the formula: Si.sub.n H.sub.2n+2 (A) wherein n is a positive integer and the compounds of the formula: Si.sub.m H.sub.l X.sub.k (B) wherein m and k are positive integers, l is 0 or a positive integer, l+k=2m+2, and X represents a halogen atom, n and m being called "order number" hereinafter, and wherein said starting substances are introduced into the deposition chamber in amounts sufficient that the proportion of the total of high order compounds is from about 85 to 99% by volume based on the total of the starting substances, the minimum order compound being that whose order number is the minimum among the order numbers of said compounds, the higher order number being one whose order number is higher than the order number of the minimum order compound.

Claim 19

Dependent Claim 207 words

In a process for producing a photoconductive member comprising forming a photoconductive layer on a substrate suitable for forming a photoconductive layer by introducing starting substances for forming a photoconductive layer under gaseous conditions into a deposition chamber maintained under a preselected reduced pressure and thereafter exciting discharging in the gaseous atmosphere of said starting substances, the improvement which comprises employing as the starting substances at least two compounds selected from the group consisting of the compounds of the formula: Si.sub.n H.sub.2n+2 (A) wherein n is a positive integer and the compounds of the formula: Si.sub.m H.sub.l X.sub.k (B) wherein m and k are positive integers, l is 0 or a positive integer, l+k=2m+2, and X represents a halogen atom, n and m being called "order number" hereinafter, and wherein said starting substances are introduced into the deposition chamber in amounts sufficient that the proportion of the total of high order compounds is from about 85 to 99% by volume based on the total of the starting substances, the minimum order compound being that whose order number is the minimum among the order numbers of said compounds, the higher order number being one whose order number is higher than the order number of the minimum order compound.

Annuity Stage	Window Opens	Payment Deadline	Surcharge Period Until	Estimated Fee	Status
3.5 Years (Year 4)	1991-01-25	1991-07-27	1992-01-26	$2000.00	Window Closed / Lapsed
7.5 Years (Year 8)	1995-01-25	1995-07-27	1996-01-26	$3760.00	Window Closed / Lapsed
11.5 Years (Year 12)	1999-01-25	1999-07-27	2000-01-26	$7700.00	Window Closed / Lapsed

Silicon film deposition from mixture of silanes

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