US4226643A
Expired / Lapsed
US
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Method of enhancing the electronic properties of an undoped and/or N-type hydrogenated amorphous silicon film
Assignee: RCA Corp
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Filing: 1979-07-16
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Granted: 1980-10-07
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Expires: 1999-07-16
Abstract
Abstract The dark conductivity and photoconductivity of an N-type and/or undoped hydrogenated amorphous silicon layer fabricated by an AC or DC proximity glow discharge in silane can be increased through the incorporation of argon in an amount from 10 to about 90 percent by volume of the glow discharge atmosphere which contains a silicon-hydrogen containing compound in an amount of from about 90 to about 10 volume percent.
Inventors
- 👤 David E. Carlson
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-24 17:09
CPC Classifications
H; H10; H10F; H10F71/00; H10F71/10; H10F71/103; C; C23; C23C; C23C16/00; C23C16/22; C23C16/24; Y; Y02; Y02E; Y02E10/00; Y02E10/50; Y02P; Y02P70/00; Y02P70/50
Claims Analysis
Total Claims: 17
Claim 1
Independent Claim
103 words
A method of forming an N-type layer or an undoped hydrogenated amorphous silicon layer having increased dark conductivity and photoconductivity by the deposition of said layer in an AC or DC proximity glow discharge, said method comprising: placing a substrate in a proximity glow discharge apparatus; reducing the pressure to from about 0.3 to about 1 Torr; heating the substrate to from about 150° to about 400° C.; introducing a gaseous mixture containing from about 10 to about 90 percent by volume of argon and from about 90 to about 10 percent by volume of silane; and applying a potential across the electrodes.
Claim 2
Independent Claim
103 words
A method of forming an N-type layer or an undoped hydrogenated amorphous silicon layer having increased dark conductivity and photoconductivity by the deposition of said layer in an AC or DC proximity glow discharge, said method comprising: placing a substrate in a proximity glow discharge apparatus; reducing the pressure to from about 0.3 to about 1 Torr; heating the substrate to from about 150° to about 400° C.; introducing a gaseous mixture containing from about 10 to about 90 percent by volume of argon and from about 90 to about 10 percent by volume of silane; and applying a potential across the electrodes.
Claim 3
Dependent Claim
39 words
The method according to claim 1 wherein the potential is an alternating potential having a voltage of from about 500 volts to about 2 kilovolts root mean square with a frequency equal to or greater than about 1 hertz.
Claim 4
Dependent Claim
17 words
The method according to claim 2 wherein the AC voltage is about 1.5 kilovolts root mean square.
Claim 5
Dependent Claim
24 words
The method according to claim 1 wherein the potential is a DC potential with a voltage of from about 700 to about 1500 volts.
Claim 6
Dependent Claim
28 words
The method according to claim 4 wherein the current density on a cathodic screen electrode in said proximity glow discharge apparatus is about 1 milliampere per square centimeter.
Claim 7
Dependent Claim
14 words
The method according to claim 5 wherein the DC voltage is about 1.2 kilovolts.
Claim 8
Independent Claim
21 words
The method according to claims 3 or 5 wherein the substrate temperature is from about 250° C. to about 350° C.
Claim 9
Independent Claim
15 words
The method according to claims 3 or 5 wherein the pressure is about 0.6 Torr.
Claim 10
Independent Claim
28 words
The method according to claims 3 or 5 wherein the flow rate of the gas mixture is from about 10 to about 100 standard cubic centimeters per minute.
Claim 11
Dependent Claim
32 words
The method according to claim 1 wherein the silane in said glow discharge apparatus contains an N-type dopant in a concentration of from about 10 parts per million to about 3 percent.
Claim 12
Dependent Claim
14 words
The method according to claim 10 wherein the N-type dopant is PH 3 .
Claim 13
Dependent Claim
42 words
The method according to claim 1 wherein a silicon-hydrogen-halogen-containing compound is substituted for the silane in the glow discharge atmosphere and said undoped or N-type conductivity hydrogenated amorphous silicon layer incorporates a halogen in an amount up to about 7 atomic percent.
Claim 14
Dependent Claim
32 words
The method according to claim 12 wherein said silicon-hydrogen-halogen-containing compound incorporates an N-type dopant in a concentration of from about 10 parts per million to about 3 percent of the silicon-hydrogen-halogen-containing compound.
Claim 15
Dependent Claim
101 words
In a solar cell having regions of undoped and N-type conductivity hydrogenated amorphous silicon fabricated in an AC or DC proximity glow discharge, the improvement which comprises fabricating said regions on a substrate in a glow discharge atmosphere incorporating argon in an amount from about 10 to about 90 percent by volume of the glow discharge atmosphere, and silane in an amount of from about 90 to about 10 percent by volume of the glow discharge atmosphere at a pressure of from about 0.3 to about 1 Torr, with a substrate temperature of from about 150° C. to about 400° C.
Claim 16
Dependent Claim
101 words
In a solar cell having regions of undoped and N-type conductivity hydrogenated amorphous silicon fabricated in an AC or DC proximity glow discharge, the improvement which comprises fabricating said regions on a substrate in a glow discharge atmosphere incorporating argon in an amount from about 10 to about 90 percent by volume of the glow discharge atmosphere, and silane in an amount of from about 90 to about 10 percent by volume of the glow discharge atmosphere at a pressure of from about 0.3 to about 1 Torr, with a substrate temperature of from about 150° C. to about 400° C.
Claim 17
Dependent Claim
38 words
The solar cell according to claim 14 wherein a silicon-halogen-hydrogen-containing compound is substituted for the silane and the undoped and N-type conductivity hydrogenated amorphous silicon regions incorporate a halogen in an amount up to about 7 atomic percent.
References Cited (Backward Citations)
US4064521A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1983-10-07 | 1984-04-07 | 1984-10-07 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1987-10-07 | 1988-04-07 | 1988-10-07 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1991-10-07 | 1992-04-07 | 1992-10-07 | $7700.00 | Window Closed / Lapsed |