Patent US5836113A successfully refreshed from Google Patents.
US5281302A
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Method for cleaning reaction chambers by plasma etching
Assignee: Infineon Technologies AG
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Filing: 1993-01-14
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Granted: 1994-01-25
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Expires: 2013-01-14
Abstract
Abstract For cleaning parasitic layers of silicon oxides or nitrides in a reaction chamber, an etching gas mixture is employed in which at least one fluoridated carbon, particularly CF 4 and/or C 2 F 6 , is the main constituent. Then, an ozone/oxygen mixture (O 3 /O 2 ) having optimally high ozone concentration is added to the reaction chamber. The etching gas mixture is excited in the reaction chamber by triggering the etching gas mixture to form a plasma, having extremely low power with an excitation frequency in the RF range. The etching gas mixture etches all surfaces in the reaction chambers free of residues with a high etching rate.
Inventors
- 👤 Zvonimir Gabric
- 👤 Alexander Gschwandtner
- 👤 Oswald Spindler
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-06 15:52
CPC Classifications
C; C23; C23G; C23G5/00; C23C; C23C16/00; C23C16/44; C23C16/4401; C23C16/4405
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
111 words
A method for cleaning parasitic layers in a reaction chamber comprising the steps of: introducing an etching mixture into a selected reaction chamber, said etching mixture for cleaning layers of silicon oxides or nitrides parasitically deposited on inside surfaces of the reaction chamber and said etching mixture having a main constituent of at least one fluoridated carbon; adding an ozone/oxygen mixture (O 3 /O 2 ) having optimally high ozone concentration to the etching mixture in said reaction chamber; and exciting the etching gas mixture in the reaction chamber by triggering said etching gas mixture to form a plasma, having extremely low power with an excitation frequency in the RF range.
Claim 2
Independent Claim
111 words
A method for cleaning parasitic layers in a reaction chamber comprising the steps of: introducing an etching mixture into a selected reaction chamber, said etching mixture for cleaning layers of silicon oxides or nitrides parasitically deposited on inside surfaces of the reaction chamber and said etching mixture having a main constituent of at least one fluoridated carbon; adding an ozone/oxygen mixture (O 3 /O 2 ) having optimally high ozone concentration to the etching mixture in said reaction chamber; and exciting the etching gas mixture in the reaction chamber by triggering said etching gas mixture to form a plasma, having extremely low power with an excitation frequency in the RF range.
Claim 3
Dependent Claim
13 words
The method of claim 1 wherein the fluoridated carbon is CF 4 .
Claim 4
Dependent Claim
15 words
The method of claim 1 wherein the fluoridated carbon is C 2 F 6 .
Claim 5
Dependent Claim
20 words
The method of claim 1 wherein the ozone/oxygen mixture has an ozone concentration of 5 to 20 percent by volume.
Claim 6
Independent Claim
79 words
A method for cleaning parasitic layers in a reaction chamber comprising: introducing an ozone/oxygen mixture (O 3 /O 2 ) having optimally high ozone concentration into a reaction chamber as an etching gas mixture for cleaning layers of organic residues parasitically deposited on inside surfaces of the reaction chamber; and exciting the ozone/oxygen mixture in the reaction chamber by triggering said ozone/oxygen mixture to form a plasma, having extremely low power with an excitation frequency in the RF range.
Claim 7
Independent Claim
79 words
A method for cleaning parasitic layers in a reaction chamber comprising: introducing an ozone/oxygen mixture (O 3 /O 2 ) having optimally high ozone concentration into a reaction chamber as an etching gas mixture for cleaning layers of organic residues parasitically deposited on inside surfaces of the reaction chamber; and exciting the ozone/oxygen mixture in the reaction chamber by triggering said ozone/oxygen mixture to form a plasma, having extremely low power with an excitation frequency in the RF range.
Claim 8
Dependent Claim
12 words
The method of claim 5 wherein the organic residue is a polymer.
Claim 9
Dependent Claim
19 words
The method of claim 5 wherein the ozone/oxygen mixture has an ozone concentration of 5 to 20% by volume.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1997-01-24 | 1997-07-26 | 1998-01-25 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2001-01-24 | 2001-07-26 | 2002-01-25 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2005-01-24 | 2005-07-26 | 2006-01-25 | $7700.00 | Window Closed / Lapsed |