US5407853A
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US
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Method of making semiconductor integrated circuit device having single-element type non-volatile memory elements
Assignee: Samsung Electronics Co Ltd
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Filing: 1994-01-11
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Granted: 1995-04-18
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Expires: 2014-01-11
Abstract
Abstract A semiconductor integrated device having a non-volatile memory element or memory cell of a single-element type in a non-volatile memory circuit employing a field effect transistor which has, in addition to a floating gate electrode for storage of information and a controlling gate electrode, a source which includes a heavily doped region having a depth into the semiconductor substrate extending from the major surface thereof which is large. The single-element type field effect transistor, furthermore, has a drain which includes a lightly doped region which has a depth extending into the semiconductor substrate from the major surface thereof which is small.
Inventors
- 👤 Kazuhiro Komori
- 👤 Toshiaki Nishimoto
- 👤 Satoshi Meguro
- 👤 Hitoshi Kume
- 👤 Yoshiaki Kamigaki
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 14:35
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/60; H10D30/68; H10B; H10B41/00; H10B41/40; H10B41/42; H10B41/49; H10B69/00; H10D30/01; H10D30/021; H10D30/0221; H10D30/601; H10D30/603; H10D30/681; H10D30/684; H10D30/685; H10D30/686; G; G11; G11C; G11C16/00; G11C16/02; G11C16/04; G11C16/0408; G11C16/0416; H10D88/00
Claims Analysis
Total Claims: 21
Claim 1
Independent Claim
316 words
A method of manufacturing a semiconductor memory device including a memory cell, comprising steps of: providing a semiconductor substrate of a first conductivity type having a memory cell forming region, with a first gate insulating film formed on said memory cell forming region, a floating gate electrode formed on said first gate insulating film, a second gate insulating film formed on said floating gate electrode, and a control gate electrode formed on said second gate insulating film; forming a first semiconductor region, of a second conductivity type, in said memory cell forming region by introducing in said memory cell forming region an impurity in self-alignment with one end portion of said control gate electrode, said first semiconductor region extending under said floating gate electrode; forming a second semiconductor region, of said second conductivity type, in said memory cell forming region by introducing in said memory cell forming region an impurity in self-alignment with another, opposing end portion of said control gate electrode, said first semiconductor region being formed with an impurity concentration higher than an impurity concentration of said second semiconductor region, and said first semiconductor region being formed with a junction depth into said semiconductor substrate greater than a junction depth of said second semiconductor region; and forming a third semiconductor region, of said first conductivity type, in said memory cell forming region by introducing in said memory cell forming region an impurity in self-alignment with said another, opposing portion of said control gate electrode, said third semiconductor region having an impurity concentration higher than an impurity concentration of said semiconductor substrate, and said third semiconductor region being formed with a junction depth into said semiconductor substrate greater than a junction depth of said second semiconductor region, wherein carriers stored in said floating gate electrode are emitted from said floating gate electrode to said first semiconductor region by tunneling through said first gate insulating film.
Claim 2
Independent Claim
316 words
A method of manufacturing a semiconductor memory device including a memory cell, comprising steps of: providing a semiconductor substrate of a first conductivity type having a memory cell forming region, with a first gate insulating film formed on said memory cell forming region, a floating gate electrode formed on said first gate insulating film, a second gate insulating film formed on said floating gate electrode, and a control gate electrode formed on said second gate insulating film; forming a first semiconductor region, of a second conductivity type, in said memory cell forming region by introducing in said memory cell forming region an impurity in self-alignment with one end portion of said control gate electrode, said first semiconductor region extending under said floating gate electrode; forming a second semiconductor region, of said second conductivity type, in said memory cell forming region by introducing in said memory cell forming region an impurity in self-alignment with another, opposing end portion of said control gate electrode, said first semiconductor region being formed with an impurity concentration higher than an impurity concentration of said second semiconductor region, and said first semiconductor region being formed with a junction depth into said semiconductor substrate greater than a junction depth of said second semiconductor region; and forming a third semiconductor region, of said first conductivity type, in said memory cell forming region by introducing in said memory cell forming region an impurity in self-alignment with said another, opposing portion of said control gate electrode, said third semiconductor region having an impurity concentration higher than an impurity concentration of said semiconductor substrate, and said third semiconductor region being formed with a junction depth into said semiconductor substrate greater than a junction depth of said second semiconductor region, wherein carriers stored in said floating gate electrode are emitted from said floating gate electrode to said first semiconductor region by tunneling through said first gate insulating film.
Claim 3
Dependent Claim
186 words
A method of manufacturing a semiconductor memory device according to claim 1, further comprising the steps of: forming a fourth semiconductor region, of said second conductivity type, in said memory cell forming region by introducing in said memory cell forming region an impurity in self-alignment with said one end portion of said floating gate electrode, said fourth semiconductor region having an impurity concentration lower than an impurity concentration of said first semiconductor region, and said fourth semiconductor region being formed with a junction depth into said semiconductor substrate greater than a junction depth of said first semiconductor region; and after the steps of forming the first, second, third and fourth semiconductor regions, forming side wall spacers on both of opposing, side surfaces of said control and floating gate electrodes in self-alignment with said control and floating gate electrodes, wherein data is written in said memory cell by injecting hot-carriers into said floating gate electrode, and wherein data is erased from said memory cell by emitting said injected carriers from said floating gate electrode to said first semiconductor region by tunneling through said first gate insulating film.
Claim 4
Dependent Claim
97 words
A method of manufacturing a semiconductor memory device according to claim 2, further comprising the steps of: forming a fifth semiconductor region, of said second conductivity type, in said memory cell forming region by introducing in said memory cell forming region an impurity in self-alignment with a corresponding one of said side wall spacers, said fifth semiconductor region having an impurity concentration higher than an impurity concentration of said second semiconductor region, and said fifth semiconductor region being formed with a junction depth into said semiconductor substrate greater than a junction depth of said second semiconductor region.
Claim 5
Dependent Claim
141 words
A method of manufacturing a semiconductor memory device according to claim 1, further comprising the steps of: after the steps of forming the first, second and third semiconductor regions, forming side wall spacers on both of opposing, side surfaces of said control and floating gate electrodes in self-alignment with said control and floating gate electrodes; and forming, adjacent said second semiconductor region, a fourth semiconductor region, of said second conductivity type, in said memory cell forming region by introducing in said memory cell forming region an impurity in self-alignment with a corresponding one of said side wall spacers, said fourth semiconductor region having an impurity concentration higher than an impurity concentration of said second semiconductor region, and said fourth semiconductor region being formed with a junction depth into said semiconductor substrate greater than a junction depth of said second semiconductor region.
Claim 6
Dependent Claim
24 words
A method of manufacturing a semiconductor memory device according to claim 1, wherein said first and second conductivity types are p-type and n-type, respectively.
Claim 7
Independent Claim
315 words
A method of manufacturing a semiconductor memory device including a memory cell, comprising steps of: providing a semiconductor substrate of a first conductivity type having a memory cell forming region, with a first gate insulating film formed on said memory cell forming region, a floating gate electrode formed on said first gate insulating film, a second gate insulating film formed on said floating gate electrode, and a control gate electrode formed on said second gate insulating film; forming a first semiconductor region, of a second conductivity type, in said memory cell forming region by introducing in said memory cell forming region an impurity in self-alignment with one end portion of said control gate electrode, said first semiconductor region extending under said floating gate electrode; forming a second semiconductor region, of said second conductivity type, in said memory cell forming region by introducing in said memory cell forming region an impurity in self-alignment with another, opposing end portion of said control gate electrode, said first semiconductor region having an impurity concentration higher than an impurity concentration of said second semiconductor region, and said first semiconductor region being formed with a junction depth into said semiconductor substrate greater than a junction depth of said second semiconductor region; and forming a third semiconductor region, of said second conductivity type, in said memory cell forming region by introducing in said memory cell forming region an impurity in self-alignment with said one end portion of said floating gate electrode, said third semiconductor region having an impurity concentration lower than an impurity concentration of said first semiconductor region, and said third semiconductor region being formed with a junction depth into said semiconductor substrate greater than a junction depth of said first semiconductor region, wherein carriers stored in said floating gate electrode are emitted from said floating gate electrode to said first semiconductor region by tunneling through said first gate insulating film.
Claim 8
Independent Claim
315 words
A method of manufacturing a semiconductor memory device including a memory cell, comprising steps of: providing a semiconductor substrate of a first conductivity type having a memory cell forming region, with a first gate insulating film formed on said memory cell forming region, a floating gate electrode formed on said first gate insulating film, a second gate insulating film formed on said floating gate electrode, and a control gate electrode formed on said second gate insulating film; forming a first semiconductor region, of a second conductivity type, in said memory cell forming region by introducing in said memory cell forming region an impurity in self-alignment with one end portion of said control gate electrode, said first semiconductor region extending under said floating gate electrode; forming a second semiconductor region, of said second conductivity type, in said memory cell forming region by introducing in said memory cell forming region an impurity in self-alignment with another, opposing end portion of said control gate electrode, said first semiconductor region having an impurity concentration higher than an impurity concentration of said second semiconductor region, and said first semiconductor region being formed with a junction depth into said semiconductor substrate greater than a junction depth of said second semiconductor region; and forming a third semiconductor region, of said second conductivity type, in said memory cell forming region by introducing in said memory cell forming region an impurity in self-alignment with said one end portion of said floating gate electrode, said third semiconductor region having an impurity concentration lower than an impurity concentration of said first semiconductor region, and said third semiconductor region being formed with a junction depth into said semiconductor substrate greater than a junction depth of said first semiconductor region, wherein carriers stored in said floating gate electrode are emitted from said floating gate electrode to said first semiconductor region by tunneling through said first gate insulating film.
Claim 9
Dependent Claim
200 words
A method of manufacturing a semiconductor memory device according to claim 6, further comprising the steps of: after the steps of forming first, second and third semiconductor regions, forming side wall spacers on both of opposing, side surfaces of said control and floating gate electrodes in self-alignment with said control and floating gate electrodes, and forming, adjacent said second semiconductor region, a fourth semiconductor region, of said second conductivity type, in said memory cell forming region by introducing in said memory cell forming region an impurity in self-alignment with one of said side wall spacers, said fourth semiconductor region being formed with an impurity concentration higher than an impurity concentration of said second semiconductor region, and said fourth semiconductor region being formed with a junction depth into said semiconductor substrate greater than a junction depth of said second semiconductor region, wherein data is written in said memory cell by injecting hot-carriers into said floating gate electrode, wherein data is erased from said memory cell by emitting said injected carriers from said floating gate electrode to said first semiconductor region by tunneling through said first gate insulating film, and wherein said first and second conductivity types are p-type and n-type, respectively.
Claim 10
Independent Claim
494 words
A method of manufacturing a semiconductor memory device including a memory cell and an MISFET for a peripheral circuit, comprising the steps of: providing a semiconductor substrate of a first conductivity type having a memory cell forming region and a peripheral circuit forming region, with a first gate insulating film formed on said memory cell forming region, a floating gate electrode formed on said first gate insulating film, a second gate insulating film formed on said floating gate electrode, a control gate electrode formed on said second gate insulating film, and with a third gate insulating film formed on said peripheral circuit forming region, a first gate electrode of said MISFET formed on said third gate insulating film; forming a first semiconductor region, of a second conductivity type, in said memory cell forming region, by introducing in said memory cell forming region an impurity in self-alignment with one end portion of said control gate electrode, said first semiconductor region extending under said floating gate electrode; forming a second semiconductor region, of said second conductivity type, in said memory cell forming region, by introducing in said memory cell forming region an impurity in self-alignment with another, opposing end portion of said control gate electrode, said first semiconductor region being formed with an impurity concentration higher than an impurity concentration of said second semiconductor region, and said first semiconductor region being formed with a junction depth into said semiconductor substrate greater than a junction depth of said second semiconductor region; forming a third semiconductor region, of said second conductivity type, in said peripheral circuit forming region, by introducing in said peripheral circuit forming region an impurity in self-alignment with said first gate electrode, said first semiconductor region being formed with an impurity concentration higher than an impurity concentration of said third semiconductor region; after the steps of forming first, second and third semiconductor regions, forming first side wall spacers on both of opposing, side surfaces of said control and floating gate electrodes in self-alignment with said control and floating gate electrodes, and forming second side wall spacers on both of opposing, side surfaces of said first gate electrode in self-alignment with said first gate electrode; and forming, adjacent said third semiconductor region, a fourth semiconductor region, of said second conductivity type, in said peripheral circuit forming region by introducing in said peripheral circuit forming region an impurity in self-alignment with a corresponding one of said second side wall spacers, said fourth semiconductor region being formed with an impurity concentration higher than an impurity concentration of said third semiconductor region, said fourth semiconductor region being formed with a junction depth into said semiconductor substrate greater than a junction depth of said third semiconductor region, and said third and fourth semiconductor regions serve as a drain region of said MISFET, wherein carriers stored in said floating gate electrode are emitted from said floating gate electrode to said first semiconductor region by tunneling through said first gate insulating film.
Claim 11
Independent Claim
494 words
A method of manufacturing a semiconductor memory device including a memory cell and an MISFET for a peripheral circuit, comprising the steps of: providing a semiconductor substrate of a first conductivity type having a memory cell forming region and a peripheral circuit forming region, with a first gate insulating film formed on said memory cell forming region, a floating gate electrode formed on said first gate insulating film, a second gate insulating film formed on said floating gate electrode, a control gate electrode formed on said second gate insulating film, and with a third gate insulating film formed on said peripheral circuit forming region, a first gate electrode of said MISFET formed on said third gate insulating film; forming a first semiconductor region, of a second conductivity type, in said memory cell forming region, by introducing in said memory cell forming region an impurity in self-alignment with one end portion of said control gate electrode, said first semiconductor region extending under said floating gate electrode; forming a second semiconductor region, of said second conductivity type, in said memory cell forming region, by introducing in said memory cell forming region an impurity in self-alignment with another, opposing end portion of said control gate electrode, said first semiconductor region being formed with an impurity concentration higher than an impurity concentration of said second semiconductor region, and said first semiconductor region being formed with a junction depth into said semiconductor substrate greater than a junction depth of said second semiconductor region; forming a third semiconductor region, of said second conductivity type, in said peripheral circuit forming region, by introducing in said peripheral circuit forming region an impurity in self-alignment with said first gate electrode, said first semiconductor region being formed with an impurity concentration higher than an impurity concentration of said third semiconductor region; after the steps of forming first, second and third semiconductor regions, forming first side wall spacers on both of opposing, side surfaces of said control and floating gate electrodes in self-alignment with said control and floating gate electrodes, and forming second side wall spacers on both of opposing, side surfaces of said first gate electrode in self-alignment with said first gate electrode; and forming, adjacent said third semiconductor region, a fourth semiconductor region, of said second conductivity type, in said peripheral circuit forming region by introducing in said peripheral circuit forming region an impurity in self-alignment with a corresponding one of said second side wall spacers, said fourth semiconductor region being formed with an impurity concentration higher than an impurity concentration of said third semiconductor region, said fourth semiconductor region being formed with a junction depth into said semiconductor substrate greater than a junction depth of said third semiconductor region, and said third and fourth semiconductor regions serve as a drain region of said MISFET, wherein carriers stored in said floating gate electrode are emitted from said floating gate electrode to said first semiconductor region by tunneling through said first gate insulating film.
Claim 12
Dependent Claim
112 words
A method of manufacturing a semiconductor memory device according to claim 8, further comprising the step of: before the step of forming said first and second side wall spacers, forming a fifth semiconductor region, of said first conductivity type, in said memory cell forming region by introducing in said memory cell forming region an impurity in self-alignment with said another, opposing end portion of said control gate electrode, said fifth semiconductor region being formed with an impurity concentration higher than an impurity concentration of said semiconductor substrate, and said fifth semiconductor region being formed with a junction depth into said semiconductor substrate greater than a junction depth of said second semiconductor region.
Claim 13
Dependent Claim
156 words
A method of manufacturing a semiconductor memory device according to claim 9, further comprising the step of: before the step of forming said first and second side wall spacers, forming a sixth semiconductor region, of said second conductivity type, in said memory cell forming region by introducing in said memory cell forming region an impurity in self-alignment with said one end portion of said floating gate electrode, said sixth semiconductor region being formed with an impurity concentration lower than an impurity concentration of said first semiconductor region, and said sixth semiconductor region being formed with a junction depth greater than a junction depth of said first semiconductor region, wherein data is written in said memory cell by injecting hot-carriers into said floating gate electrode, and wherein data is erased from said memory cell by emitting said injected carriers from said floating gate electrode to said first semiconductor region by tunneling through said first gate insulating film.
Claim 14
Dependent Claim
116 words
A method of manufacturing a semiconductor memory device according to claim 10, wherein in the step of forming said fourth semiconductor region said impurity is introduced in both said peripheral circuit forming region and said memory cell forming region and is introduced in said memory cell forming region in self-alignment with a corresponding one of said first side wall spacers to form a seventh semiconductor region of said second conductivity type, said seventh semiconductor region being formed with an impurity concentration higher than an impurity concentration of said second semiconductor region, and said seventh semiconductor region being formed with a junction depth into said semiconductor substrate greater than a junction depth of said second semiconductor region.
Claim 15
Dependent Claim
116 words
A method of manufacturing a semiconductor memory device according to claim 9, wherein in the step of forming said fourth semiconductor region said impurity is introduced in both said peripheral circuit forming region and said memory cell forming region and is introduced in said memory cell forming region in self-alignment with a corresponding one of said first side wall spacers to form a sixth semiconductor region of said second conductivity type, said sixth semiconductor region being formed with an impurity concentration higher than an impurity concentration of said second semiconductor region, and said sixth semiconductor region being formed with a junction depth into said semiconductor substrate greater than a junction depth of said second semiconductor region.
Claim 16
Dependent Claim
32 words
A method of manufacturing a semiconductor memory device according to claim 9, wherein an impurity concentration of said second semiconductor region is higher than an impurity concentration of said third semiconductor region.
Claim 17
Dependent Claim
112 words
A method of manufacturing a semiconductor memory device according to claim 8, further comprising the step of: before the step of forming said first and second side wall spacers, forming a fifth semiconductor region, of said second conductivity type, in said memory cell forming region by introducing in said memory cell forming region an impurity in self-alignment with said one end portion of said floating gate electrode, said fifth semiconductor region being formed with an impurity concentration lower than an impurity concentration of said first semiconductor region, and said fifth semiconductor region being formed with a junction depth into said semiconductor substrate greater than a junction depth of said first semiconductor region.
Claim 18
Dependent Claim
116 words
A method of manufacturing a semiconductor memory device according to claim 14, wherein in the step of forming said fourth semiconductor region said impurity is introduced in both said peripheral circuit forming region and said memory cell forming region and is introduced in said memory cell forming region in self-alignment with a corresponding one of said first side wall spacers to form a sixth semiconductor region of said second conductivity type, said sixth semiconductor region being formed with an impurity concentration higher than an impurity concentration of said second semiconductor region, and said sixth semiconductor region being formed with a junction depth into said semiconductor substrate greater than a junction depth of said second semiconductor region.
Claim 19
Dependent Claim
116 words
A method of manufacturing a semiconductor memory device according to claim 8, wherein in the step of forming said fourth semiconductor region said impurity is introduced in both said peripheral circuit forming region and said memory cell forming region and is introduced in said memory cell forming region in self-alignment with a corresponding one of said first side wall spacers to form a fifth semiconductor region of said second conductivity type, said fifth semiconductor region being formed with an impurity concentration higher than an impurity concentration of said second semiconductor region, and said fifth semiconductor region being formed with a junction depth into said semiconductor substrate greater than a junction depth of said second semiconductor region.
Claim 20
Dependent Claim
32 words
A method of manufacturing a semiconductor memory device according to claim 8, wherein an impurity concentration of said second semiconductor region is higher than an impurity concentration of said third semiconductor region.
Claim 21
Dependent Claim
24 words
A method of manufacturing a semiconductor memory device according to claim 8, wherein said first and second conductivity types are p-type and n-type, respectively.
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