Abstract The invention provides a semiconductor memory device including a semiconductor substrate of a first conductivity type, comprising, a gate insulating film on a channel region of the semiconductor substrate, a floating gate on the gate insulating film, a floating gate insulating film on the floating gate, a control gate on the floating gate insulating film, first and second impurity regions of a second conductivity type in the semiconductor substrate and being adjacent to the gate insulating film, a third impurity region of the second conductivity type more lightly doped than the first and second impurity regions, being adjacent to the channel region, and a fourth impurity region of the second conductivity type more highly doped than the third impurity region and more lightly doped then the first and second impurity regions in the surface region of the third impurity region.
A semiconductor memory device including a semiconductor substrate of a first conductivity type, comprising: a gate insulating film on a channel region of the semiconductor substrate; a floating gate on the gate insulating film; a floating gate insulating film on the floating gate; a control gate on the floating gate insulating film; first and second impurity regions of a second conductivity type in the semiconductor substrate and being adjacent to the gate insulating film; a third impurity region of the second conductivity type more lightly doped than the first and second impurity regions, being adjacent to the channel region; and a fourth impurity region of the second conductivity type more highly doped than the third impurity regio and more lightly doped than the first and second impurity regions, being in the surface region of the third impurity region.
Claim 2
Dependent Claim
138 words
A semiconductor memory device including a semiconductor substrate of a first conductivity type, comprising: a gate insulating film on a channel region of the semiconductor substrate; a floating gate on the gate insulating film; a floating gate insulating film on the floating gate; a control gate on the floating gate insulating film; first and second impurity regions of a second conductivity type in the semiconductor substrate and being adjacent to the gate insulating film; a third impurity region of the second conductivity type more lightly doped than the first and second impurity regions, being adjacent to the channel region; and a fourth impurity region of the second conductivity type more highly doped than the third impurity regio and more lightly doped than the first and second impurity regions, being in the surface region of the third impurity region.
Claim 3
Dependent Claim
46 words
The semiconductor memory device as claimed in claim 1, wherein the semiconductor memory device comprises a fifth impurity region of the first conductivity type more highly doped than the semiconductor substrate and being deeper from the surface of the semiconductor substrate than the third impurity region.