US4665418A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor memory device
Assignee: Toshiba Corp
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Filing: 1983-12-16
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Granted: 1987-05-12
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Expires: 2003-12-16
Abstract
Abstract A semiconductor memory device includes n + -type first and second semiconductor regions which are separately formed in the surface area of a p-type semiconductor substrate, a floating gate and a control gate. The second semiconductor region acting as a drain in a data readout mode is composed of a main portion, and an additional portion having an impurity concentration lower than that of the main portion and formed in contact with the main portion and a channel region.
Inventors
- 👤 Yoshihisa Mizutani
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 13:26
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/60; G; G11; G11C; G11C16/00; G11C16/02; G11C16/04; G11C16/0408; G11C16/0416; H10D30/68; H10D30/681; H10D30/684; H10D30/685
Claims Analysis
Total Claims: 15
Claim 1
Independent Claim
137 words
A semiconductor memory device comprising: a semiconductor substrate of one conductivity type; first and second semiconductor regions of an opposite conductivity type, which are separately formed in the surface area of said semiconductor substrate, said second semiconductor region having a main portion and an additional portion which has an impurity concentration lower than of said main portion and is formed in contact with the main portion and a channel region between said first and second semiconductor regions; a floating gate insulatively formed on said channel region; a control gate insulatively formed on said floating gate; first and second power supply lines; and switching means for selectively changing the electrical connections between said first and second power supply lines and said first and second semiconductor regions to selectively reverse the potentials of said first and second semiconductor regions.
Claim 2
Dependent Claim
137 words
A semiconductor memory device comprising: a semiconductor substrate of one conductivity type; first and second semiconductor regions of an opposite conductivity type, which are separately formed in the surface area of said semiconductor substrate, said second semiconductor region having a main portion and an additional portion which has an impurity concentration lower than of said main portion and is formed in contact with the main portion and a channel region between said first and second semiconductor regions; a floating gate insulatively formed on said channel region; a control gate insulatively formed on said floating gate; first and second power supply lines; and switching means for selectively changing the electrical connections between said first and second power supply lines and said first and second semiconductor regions to selectively reverse the potentials of said first and second semiconductor regions.
Claim 3
Dependent Claim
56 words
A semiconductor memory device according to claim 1, further comprising a semiconductor region of said one conductivity type having an impurity concentration higher than that of said semiconductor substrate, and formed in the surface area of said semiconductor substrate and in contact with that part of said first semiconductor region which faces said second semiconductor region.
Claim 4
Dependent Claim
6 words
A semiconductor memory device according to
Claim 5
Dependent Claim
6 words
A semiconductor memory device according to
Claim 6
Dependent Claim
37 words
A semiconductor memory device according to claim 2, wherein said additional portion is formed in the surface area of said semiconductor substrate, and said main portion is formed in contact with the undersurface of said additional portion.
Claim 7
Dependent Claim
37 words
A semiconductor memory device according to claim 1, wherein said main portion is formed apart from said channel region, and at least part of said additional portion is formed between said main portion and said channel region.
Claim 8
Dependent Claim
37 words
A semiconductor memory device according to claim 1, wherein said additional portion is formed in the surface area of said semiconductor substrate, and said main portion is formed in contact with the undersurface of said additional portion.
Claim 9
Dependent Claim
119 words
A semiconductor memory device comprising: a semiconductor substrate of one conductivity type; first and second semiconductor regions of an opposite conductivity type, which are separately formed in the surface area of said semiconductor substrate, a channel region between said first and second semiconductor region, said second semiconductor region having a main portion and an additional portion which has an impurity concentration lower than that of said main portion and is formed in the surface area of said semiconductor substrate in contact with said channel region, and said main portion being formed in contact with the undersurface of said additional portion; a floating gate insulatively formed on said channel region; and a control gate insulatively formed on said floating gate.
Claim 10
Dependent Claim
119 words
A semiconductor memory device comprising: a semiconductor substrate of one conductivity type; first and second semiconductor regions of an opposite conductivity type, which are separately formed in the surface area of said semiconductor substrate, a channel region between said first and second semiconductor region, said second semiconductor region having a main portion and an additional portion which has an impurity concentration lower than that of said main portion and is formed in the surface area of said semiconductor substrate in contact with said channel region, and said main portion being formed in contact with the undersurface of said additional portion; a floating gate insulatively formed on said channel region; and a control gate insulatively formed on said floating gate.
Claim 11
Dependent Claim
56 words
A semiconductor memory device according to claim 7, further comprising a semiconductor region of said one conductivity type having an impurity concentration higher than that of said semiconductor substrate, and formed in the surface area of said semiconductor substrate and in contact with that part of said first semiconductor region which faces said second semiconductor region.
Claim 12
Dependent Claim
124 words
A semiconductor memory device comprising: a semiconductor substrate of one conductivity type; a first semiconductor region of an opposite conductivity type formed in the surface area of said semiconductor substrate; a second semiconductor region of said opposite conductivity type formed shallower than and separated from said first semiconductor region on the surface area of said semiconductor substrate; a floating gate insulatively formed on a channel region between said first and second semiconductor regions; a control gate insulatively formed on said floating gate; first and second power supply lines; and switching means for selectively changing the electrical connections between said first and second power supply lines and said first and second semiconductor regions to selectively reverse the potentials of said first and second semiconductor regions.
Claim 13
Dependent Claim
124 words
A semiconductor memory device comprising: a semiconductor substrate of one conductivity type; a first semiconductor region of an opposite conductivity type formed in the surface area of said semiconductor substrate; a second semiconductor region of said opposite conductivity type formed shallower than and separated from said first semiconductor region on the surface area of said semiconductor substrate; a floating gate insulatively formed on a channel region between said first and second semiconductor regions; a control gate insulatively formed on said floating gate; first and second power supply lines; and switching means for selectively changing the electrical connections between said first and second power supply lines and said first and second semiconductor regions to selectively reverse the potentials of said first and second semiconductor regions.
Claim 14
Dependent Claim
128 words
A semiconductor memory device comprising: a semiconductor substrate of one conductivity type; a first semiconductor region of an opposite conductivity type formed in the surface area of said semiconductor substrate; a conductive layer composed of a schotthy barrier metal formed apart from said first semiconductor region on the surface of said semiconductor substrate; a floating gate insulatively formed on a channel region between said first semiconductor region and said conductive layer; a control gate insulatively formed on said floating gate; first and second power supply lines; and switching means for selectively changing the electrical connections between said first and second power supply lines and said first semiconductor region and said Schottky barrier metal to selectively reverse the potentials of said first semiconductor region and said Schottky barrier metal.
Claim 15
Dependent Claim
128 words
A semiconductor memory device comprising: a semiconductor substrate of one conductivity type; a first semiconductor region of an opposite conductivity type formed in the surface area of said semiconductor substrate; a conductive layer composed of a schotthy barrier metal formed apart from said first semiconductor region on the surface of said semiconductor substrate; a floating gate insulatively formed on a channel region between said first semiconductor region and said conductive layer; a control gate insulatively formed on said floating gate; first and second power supply lines; and switching means for selectively changing the electrical connections between said first and second power supply lines and said first semiconductor region and said Schottky barrier metal to selectively reverse the potentials of said first semiconductor region and said Schottky barrier metal.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1990-05-11 | 1990-11-10 | 1991-05-12 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1994-05-11 | 1994-11-10 | 1995-05-12 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1998-05-11 | 1998-11-10 | 1999-05-12 | $7700.00 | Window Closed / Lapsed |