US5406554A
Expired / Lapsed
US
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Synchronous FIFO having an alterable buffer store
Assignee: Music Semiconductor Corp
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Filing: 1993-10-05
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Granted: 1995-04-11
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Expires: 2013-10-05
Abstract
Abstract A synchronous first-in, first-out ("FIFO") having an alterable buffer store includes a dual-ported, random access memory ("RAM") based memory device incorporating conventional "empty" and "full" flags while also providing an alternate mode of operation in which the inhibiting effects of the "empty" and "full" flags are disabled whereby information contained within the FIFO may be modified before being read out. The alternate mode of operation is particularly useful in asynchronous transfer mode ("ATM") networking applications.
Inventors
- 👤 Raymond E. Parry
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-27 09:03
CPC Classifications
G; G06; G06F; G06F5/00; G06F5/06; H; H04; H04Q; H04Q11/00; H04Q11/04; H04Q11/0428; H04Q11/0478; H04L; H04L12/00; H04L12/54; H04L12/56; H04L12/5601; H04L2012/5638; H04L2012/5646; H04L2012/5647; H04L2012/5678; H04L2012/5681
Claims Analysis
Total Claims: 13
Claim 1
Independent Claim
176 words
A first-in first-out memory device including a memory array, said device having input and output registers thereof respectively coupling an input data bus and an output data bus of said device to said memory array, said device comprising: write control logic responsive to a write enable signal for transferring data on said input data bus to said input register for writing to a first predetermined location in said memory array; read control logic responsive to a read enable signal for transferring data from a second predetermined location in said memory array to said output register for reading on said output data bus; flag logic responsive to said write control logic and said read control logic for indicating when said memory array is full or empty; first means for inhibiting said write control logic and said read control logic in response to a respective full or empty indication from said flag logic; and second means for enabling said write control logic and said read control logic despite said respective full or empty indication from said flag logic.
Claim 2
Dependent Claim
176 words
A first-in first-out memory device including a memory array, said device having input and output registers thereof respectively coupling an input data bus and an output data bus of said device to said memory array, said device comprising: write control logic responsive to a write enable signal for transferring data on said input data bus to said input register for writing to a first predetermined location in said memory array; read control logic responsive to a read enable signal for transferring data from a second predetermined location in said memory array to said output register for reading on said output data bus; flag logic responsive to said write control logic and said read control logic for indicating when said memory array is full or empty; first means for inhibiting said write control logic and said read control logic in response to a respective full or empty indication from said flag logic; and second means for enabling said write control logic and said read control logic despite said respective full or empty indication from said flag logic.
Claim 3
Dependent Claim
156 words
A first-in first-out memory device having a memory array, said device including write control logic responsive to a write enable signal for transferring data on an input data bus to an input register for writing to a first predetermined location in said memory array and read control logic responsive to a read enable signal for transferring data from a second predetermined location in said memory array to an output register for reading on an output data bus, said device further including flag logic responsive to said write control logic and said read control logic for indicating when said memory array is full or empty, said write control logic and said read control logic being inhibited in response to a respective full or empty indication from said flag logic, the improvement comprising, in combination: means for enabling said write control logic and said read control logic despite said respective full or empty indication from said flag logic.
Claim 4
Dependent Claim
156 words
A first-in first-out memory device having a memory array, said device including write control logic responsive to a write enable signal for transferring data on an input data bus to an input register for writing to a first predetermined location in said memory array and read control logic responsive to a read enable signal for transferring data from a second predetermined location in said memory array to an output register for reading on an output data bus, said device further including flag logic responsive to said write control logic and said read control logic for indicating when said memory array is full or empty, said write control logic and said read control logic being inhibited in response to a respective full or empty indication from said flag logic, the improvement comprising, in combination: means for enabling said write control logic and said read control logic despite said respective full or empty indication from said flag logic.
Claim 5
Dependent Claim
143 words
A data switching system coupled between an input data bus and an output data bus, said system including a plurality of memory devices in which data may be selectively modified in any of said devices comprising: a first memory device coupled to said input data bus for writing in input data to a first memory array; a second memory device coupled to a modification data bus for overwriting selected data in a second memory array with modified data substantially concurrently with the writing in of the input data to the first memory array of said first memory device; and a third memory device coupled to said output data bus for reading out output data from a third memory array to said output data bus substantially concurrently with the overwriting of the selected data in the second memory array of said second memory device.
Claim 6
Dependent Claim
143 words
A data switching system coupled between an input data bus and an output data bus, said system including a plurality of memory devices in which data may be selectively modified in any of said devices comprising: a first memory device coupled to said input data bus for writing in input data to a first memory array; a second memory device coupled to a modification data bus for overwriting selected data in a second memory array with modified data substantially concurrently with the writing in of the input data to the first memory array of said first memory device; and a third memory device coupled to said output data bus for reading out output data from a third memory array to said output data bus substantially concurrently with the overwriting of the selected data in the second memory array of said second memory device.
Claim 7
Dependent Claim
81 words
The data switching system of claim 3 further comprising: a multiplexer system selectively coupling said input and modification data buses to said first, second and third memory devices, said multiplexer system coupling said input data bus and said modification data bus to said first and second memory devices respectively at a first predetermined time, to said third and first memory devices respectively at a second predetermined time and to said second and third memory devices respectively at a third predetermined time.
Claim 8
Dependent Claim
113 words
A data switching system coupled between an input data bus and an output data bus, said system including a plurality of memory devices in which data may be selectively modified in any of said devices comprising: means for writing in data from said input data bus to a first memory device; means for modifying data in a second memory device substantially concurrently with the writing in of the data from said input data base by said means for writing; and means for reading out data from a third memory device to said output data bus substantially concurrently with the modifying of the data in the second memory device by said means for modifying.
Claim 9
Dependent Claim
113 words
A data switching system coupled between an input data bus and an output data bus, said system including a plurality of memory devices in which data may be selectively modified in any of said devices comprising: means for writing in data from said input data bus to a first memory device; means for modifying data in a second memory device substantially concurrently with the writing in of the data from said input data base by said means for writing; and means for reading out data from a third memory device to said output data bus substantially concurrently with the modifying of the data in the second memory device by said means for modifying.
Claim 10
Independent Claim
67 words
A method for data switching between an input data bus and an output data bus comprising the substantially concurrent steps of: writing in a first cell of data from said input data bus to a first memory device; modifying a second cell of data in a second memory device; and reading out a third cell of data from a third memory device to said output data bus.
Claim 11
Independent Claim
67 words
A method for data switching between an input data bus and an output data bus comprising the substantially concurrent steps of: writing in a first cell of data from said input data bus to a first memory device; modifying a second cell of data in a second memory device; and reading out a third cell of data from a third memory device to said output data bus.
Claim 12
Dependent Claim
66 words
The method of claim 6 further comprising the steps of: secondly modifying the first cell of data in said first memory device; secondly reading out the second cell of data from said second memory device once modified during said step of modifying to said output data bus; and secondly writing in a fourth cell of data from said input data bus to said third memory device.
Claim 13
Dependent Claim
67 words
The method of claim 7 further comprising the steps of: thirdly reading out the first cell of data from said first memory device once modified during said step of secondly modifying to said output data bus; thirdly writing in a fifth cell of data from said input data bus to said second memory device; and thirdly modifying the fourth cell of data in said third memory device.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1998-04-10 | 1998-10-10 | 1999-04-11 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2002-04-10 | 2002-10-10 | 2003-04-11 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2006-04-10 | 2006-10-10 | 2007-04-11 | $7700.00 | Window Closed / Lapsed |