US4992983A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor memory device with an improved write control circuit
Assignee: Micron Memory Japan Ltd
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Filing: 1990-06-19
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Granted: 1991-02-12
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Expires: 2010-06-19
Abstract
Abstract A semiconductor memory device with a write control circuit free from error which may be induced during readout operation by noise on power line, or the like, is disclosed. The memory device comprises a write circuit for writing data to a selected memory cell, and a read circuit for reading data from the selected memory cell, a first control circuit for enabling the write circuit in response to a write enable signal, and a second control circuit for enabling the read circuit in response to a read enable signal. The first control circuit additionally receives the read enable signal and enable the write circuit only when the write enable signal is present and the read enable signal is not present.
Inventors
- 👤 Toru Suzuki
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-27 12:37
CPC Classifications
G; G11; G11C; G11C7/00; G11C7/22
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
164 words
A semiconductor memory device comprising a memory cell array including a plurality of read/write memory cells, selection means for selecting at least one memory cell in said memory cell array, a first input means for receiving a write enable signal, a second input means for receiving a read enable signal, a data input/output terminal, a write circuit for operatively writing data applied to said input/output terminal to the selected memory cell when enabled, a read circuit for operatively outputting data from the selected memory cell to said input/output terminal when enabled, a first control circuit coupled to said first and second input means, said first control circuit enabling said read circuit only when said read enable signal is active in level, and a second control circuit coupled to said first input means and said first control circuit, said second control circuit enabling said write circuit only when said write enable signal is active in level and said first control circuit disenables said read circuit.
Claim 2
Dependent Claim
164 words
A semiconductor memory device comprising a memory cell array including a plurality of read/write memory cells, selection means for selecting at least one memory cell in said memory cell array, a first input means for receiving a write enable signal, a second input means for receiving a read enable signal, a data input/output terminal, a write circuit for operatively writing data applied to said input/output terminal to the selected memory cell when enabled, a read circuit for operatively outputting data from the selected memory cell to said input/output terminal when enabled, a first control circuit coupled to said first and second input means, said first control circuit enabling said read circuit only when said read enable signal is active in level, and a second control circuit coupled to said first input means and said first control circuit, said second control circuit enabling said write circuit only when said write enable signal is active in level and said first control circuit disenables said read circuit.
Claim 3
Dependent Claim
47 words
A semiconductor memory device as claimed in claim 1, wherein said second control circuit includes a NOR circuit having first and second input terminals, said first input terminal being connected to said first input means and said second input terminal being connected to said first control circuit.
Claim 4
Dependent Claim
63 words
A semiconductor memory device as claimed in claim 1, wherein said first control circuit includes a first inverter having an input terminal connected to said second input means, and a NOR circuit having first and second input ends, said first input end being connected to the output of said first inverter and said second input end being connected to said second input means.
Claim 5
Dependent Claim
35 words
A semiconductor memory device as claimed in claim 1, further comprising an internal power line and an internal ground line connected to said read circuit, said write circuit, and said first and second control circuits.
Claim 6
Dependent Claim
52 words
A semiconductor memory device as claimed in claim 1, wherein said write circuit includes a flip-flop, means for setting a state of said flip-flop in response to data applied to said input/output terminal, and means for setting a state of the selected memory cell in response to the state of said flip-flop.
Claim 7
Dependent Claim
60 words
A semiconductor memory device as claimed in claim 1, wherein said memory cell array includes a plurality of word lines arranged in rows and a plurality of bit lines arranged in columns, and said selection means includes a row decoder for selecting one of said word lines, and a column decoder for selecting at least one of said bit lines.
Claim 8
Dependent Claim
134 words
A semiconductor memory device comprising a memory cell array having a plurality of memory cells, selection means for selecting at least one memory cell of said memory cell array, an input/output terminal, a write circuit for operatively, writing data applied to said input/output terminal to the selected memory cell when enabled, a read circuit for operatively, outputting data from the selected memory cell to said input/output terminal when enabled, a first control circuit receiving a write enable signal and a read enable signal and enabling said read circuit only when said write enable signal is inactive level and said read enable signal is active in level, and a second control circuit for enabling said data write circuit only when said write enable signal is active in level and said read circuit is not enabled.
Claim 9
Dependent Claim
134 words
A semiconductor memory device comprising a memory cell array having a plurality of memory cells, selection means for selecting at least one memory cell of said memory cell array, an input/output terminal, a write circuit for operatively, writing data applied to said input/output terminal to the selected memory cell when enabled, a read circuit for operatively, outputting data from the selected memory cell to said input/output terminal when enabled, a first control circuit receiving a write enable signal and a read enable signal and enabling said read circuit only when said write enable signal is inactive level and said read enable signal is active in level, and a second control circuit for enabling said data write circuit only when said write enable signal is active in level and said read circuit is not enabled.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1994-02-11 | 1994-08-13 | 1995-02-12 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1998-02-11 | 1998-08-13 | 1999-02-12 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2002-02-11 | 2002-08-13 | 2003-02-12 | $7700.00 | Window Closed / Lapsed |