Semiconductor die having a high density array of composite bond pads

Claim 2

A high-density bond pad arrangement for a semiconductor die, comprising: a semiconductor die having an edge; a plurality of elongated composite bond pads arranged in a substantially linear army along the edge of the semiconductor die; wherein: each bond pad has a major axis; each major axis is oriented such that it aligns with an expected approach angle of a conductive line, wherein each composite bond pad comprises: a lower bond pad element having a top surface; an upper bond pad element having a bottom surface; an insulating component disposed between the upper and lower bond pad elements; at least one opening through the insulating component, extending from the upper bond pad element to the lower bond pad element, and aligned with a peripheral region of the bottom bond pad element; and tungsten filling the at least one opening, and electrically connecting the upper bond pad element to the lower bond pad element, said upper bond pad being formed from a different material than tungsten.

Claim 3

A high-density bond pad arrangement for a semiconductor die, comprising: a semiconductor die having an edge; a plurality of elongated composite bond pads arranged in a substantially linear array along the edge of the semiconductor die; wherein: each bond pad has a major axis; each major axis is oriented such that it aligns with an expected approach angle of a conductive line. wherein each composite bond pad comprises: a lower bond pad element having a top surface; an upper bond pad element having a bottom surface; an insulating component disposed between the upper and lower bond pad elements; at least one opening through the insulating component, extending from the upper bond pad element to the lower bond pad element, and aligned with a peripheral region of the bottom bond pad element; and conductive material filling the at least one opening, and electrically connecting the upper bond pad element to the lower bond pad element; wherein: the at least one opening is a plurality of vias; and the plurality of vias extend in one string around the peripheral region; further comprising: a barrier metal layer beneath said lower bond pad.

Claim 4

A high-density bond pad arrangement for a semiconductor die, comprising: a semiconductor die having an edge; a plurality of elongated composite bond pads arranged in a substantially linear array along the edge of the semiconductor die; wherein: each bond pad has a major axis; each major axis is oriented such that it aligns with an expected approach angle of a conductive line. wherein each composite bond pad comprises: a lower bond pad element having a top surface; an upper bond pad element having a bottom surface; an insulating component disposed between the upper and lower bond pad elements; at least one opening through the insulating component, extending from the upper bond pad element to the lower bond pad element, and aligned with a peripheral region of the bottom bond pad element; and conductive material filling the at least one opening, and electrically connecting the upper bond pad element to the lower bond pad element; wherein: the at least one opening is a plurality of vias; and the plurality of vias extend in one string around the peripheral region; further comprising: a barrier metal layer beneath said lower bond pad.

Claim 5

A high-density bond pad arrangement for a semiconductor die, comprising: a semiconductor die having an edge; a plurality of elongated composite bond pads arranged in a substantially linear array along the edge of the semiconductor die; wherein: each bond pad has a major axis; each major axis is oriented such that it aligns with an expected approach angle of a conductive line. wherein each composite bond pad comprises: a lower bond pad element having a top surface; an upper bond pad element having a bottom surface; an insulating component disposed between the upper and lower bond pad elements; at least one opening through the insulating component, extending from the upper bond pad element to the lower bond pad element, and aligned with a peripheral region of the bottom bond pad element; and conductive material filling the at least one opening, and electrically connecting the upper bond pad element to the lower bond pad element; wherein: the at least one opening is a plurality of vias; and the plurality of vias extend in one string around the peripheral region; further comprising: a barrier metal layer beneath said lower bond pad; wherein: said barrier metal layer is selected from the group consisting of titanium, titanium nitride and titanium tungsten.

Claim 6

A high-density bond pad arrangement for a semiconductor die, comprising: a semiconductor die having an edge; a plurality of elongated composite bond pads arranged in a substantially linear array along the edge of the semiconductor die; wherein: each bond pad has a major axis; each major axis is oriented such that it aligns with an expected approach angle of a conductive line. wherein each composite bond pad comprises: a lower bond pad element having a top surface; an upper bond pad element having a bottom surface; an insulating component disposed between the upper and lower bond pad elements; at least one opening through the insulating component, extending from the upper bond pad element to the lower bond pad element, and aligned with a peripheral region of the bottom bond pad element; and conductive material filling the at least one opening, and electrically connecting the upper bond pad element to the lower bond pad element; wherein: the at least one opening is a plurality of vias; and the plurality of vias extend in one string around the peripheral region; further comprising: a barrier metal layer beneath said lower bond pad; wherein: said barrier metal layer is selected from the group consisting of titanium, titanium nitride and titanium tungsten.

Claim 7

A high-density bond pad arrangement for a semiconductor die, comprising: a semiconductor die having an edge; a plurality of elongated composite bond pads arranged in a substantially linear array along the edge of the semiconductor die; wherein: each bond pad has a major axis; each major axis is oriented such that it aligns with an expected approach angle of a conductive line. wherein each composite bond pad comprises: a lower bond pad element having a top surface; an upper bond pad element having a bottom surface; an insulating component disposed between the upper and lower bond pad elements; at least one opening through the insulating component, extending from the upper bond pad element to the lower bond pad element, and aligned with a peripheral region of the bottom bond pad element; and conductive material filling the at least one opening, and electrically connecting the upper bond pad element to the lower bond pad element; wherein: the at least one opening is a plurality of vias; the plurality of vias extend in one string around the peripheral region; said conductive material is selectively deposited in the opening; and said conductive material is tungsten.

Claim 8

A high-density bond pad arrangement for a semiconductor die, comprising: a semiconductor die having an edge; a plurality of elongated composite bond pads arranged in a substantially linear array along the edge of the semiconductor die; wherein: each bond pad has a major axis; each major axis is oriented such that it aligns with an expected approach angle of a conductive line. wherein each composite bond pad comprises: a lower bond pad element having a top surface; an upper bond pad element having a bottom surface; an insulating component disposed between the upper and lower bond pad elements; at least one opening through the insulating component, extending from the upper bond pad element to the lower bond pad element, and aligned with a peripheral region of the bottom bond pad element; and conductive material filling the at least one opening, and electrically connecting the upper bond pad element to the lower bond pad element; wherein: the at least one opening is a plurality of vias; the plurality of vias extend in one string around the peripheral region; said conductive material is selectively deposited in the opening; and said conductive material is tungsten.

Claim 9

Composite bond pad for a semiconductor die having an edge having a plurality of composite bond pads arranged in a substantially linear array along the edge of the semiconductor die; wherein: each bond pad is elongated and has a major axis; each major axis is oriented such that it aligns with an expected approach angle of a conductive line; wherein each composite bond pad comprises: a lower bond pad element having a top surface with a first area; an upper bond pad element having a bottom surface and a second area, the upper bond pad element aligned atop and spaced apart from the lower bond pad element; a volumetric space defined between the top surface of the lower bond pad element and the bottom surface of the upper bond pad element; an insulating component disposed between the upper and lower bond pad elements and substantially filling the volumetric space between the top surface of the lower bond pad element and the bottom surface of the upper bond pad element; at least one opening through the insulating component, extending from the upper bond pad element to the lower bond pad element, and aligned with a peripheral region of the bottom bond pad element; and conductive material filling the at least one opening, and electrically connecting the upper bond pad element to the lower bond pad element; wherein: the peripheral region is defined as extending from a periphery of the first area towards a center point of the first area, less than 10% of a distance from the periphery towards the center point of the first area, on the top surface of the lower bond pad; and the at least one opening is a plurality of vias extending in one string around the peripheral region.

Claim 10

Composite bond pad for a semiconductor die having an edge having a plurality of composite bond pads arranged in a substantially linear array along the edge of the semiconductor die; wherein: each bond pad is elongated and has a major axis; each major axis is oriented such that it aligns with an expected approach angle of a conductive line; wherein each composite bond pad comprises: a lower bond pad element having a top surface with a first area; an upper bond pad element having a bottom surface and a second area, the upper bond pad element aligned atop and spaced apart from the lower bond pad element; a volumetric space defined between the top surface of the lower bond pad element and the bottom surface of the upper bond pad element; an insulating component disposed between the upper and lower bond pad elements and substantially filling the volumetric space between the top surface of the lower bond pad element and the bottom surface of the upper bond pad element; at least one opening through the insulating component, extending from the upper bond pad element to the lower bond pad element, and aligned with a peripheral region of the bottom bond pad element; and conductive material filling the at least one opening, and electrically connecting the upper bond pad element to the lower bond pad element; wherein: the peripheral region is defined as extending from a periphery of the first area towards a center point of the first area, less than 10% of a distance from the periphery towards the center point of the first area, on the top surface of the lower bond pad; and the at least one opening is a plurality of vias extending in one string around the peripheral region.

Claim 11

Composite bond pad, according to claim 5, wherein: each via measures one micron in cross-section.

Claim 12

The bond pad of claim 5, further comprising: a barrier metal layer beneath said lower bond pad.

Claim 13

The bond pad of claim 7, wherein: said barrier metal layer is selected from the group consisting of titanium, titanium nitride and titanium tungsten.

Claim 14

A semiconductor die having a high density array of composite bond pads, comprising: a semiconductor die having an edge; a first set of composite bond pads on the semiconductor die, each having a certain non-square shape which is wide on one end and narrow on an opposing end; and a second set of composite bond pads on the semiconductor die, each having another certain non-square shape which is narrow on one end and wide on an opposing end, and which is complementary to the certain non-square shape of the bond pads in the first set of composite bond pads; wherein: the first set of composite bond pads is oriented such that the wide end of each bond pad in the first set of composite bond pads is adjacent to the edge of the semiconductor die; and the second set of composite bond pads is oriented such that the narrow end of each bond pad in the second set of composite bond pads is adjacent to the edge of the semiconductor die; wherein each of the first and second sets of composite bond pads includes a plurality of composite bond pads, each composite bond pad comprising: a lower bond pad element having a top surface; an upper bond pad element having a bottom surface; an insulating component disposed between the upper and lower bond pad elements; at least one opening through the insulating component, extending from the upper bond pad element to the lower bond pad element, and aligned with a peripheral region of the bottom bond pad element; and conductive material filling the at least one opening, and electrically connecting the upper bond pad element to the lower bond pad element; wherein the at least one opening is one string of vias extending around the peripheral region of the bottom bond pad element.

Claim 15

A semiconductor die having a high density array of composite bond pads, comprising: a semiconductor die having an edge; a first set of composite bond pads on the semiconductor die, each having a certain non-square shape which is wide on one end and narrow on an opposing end; and a second set of composite bond pads on the semiconductor die, each having another certain non-square shape which is narrow on one end and wide on an opposing end, and which is complementary to the certain non-square shape of the bond pads in the first set of composite bond pads; wherein: the first set of composite bond pads is oriented such that the wide end of each bond pad in the first set of composite bond pads is adjacent to the edge of the semiconductor die; and the second set of composite bond pads is oriented such that the narrow end of each bond pad in the second set of composite bond pads is adjacent to the edge of the semiconductor die; wherein each of the first and second sets of composite bond pads includes a plurality of composite bond pads, each composite bond pad comprising: a lower bond pad element having a top surface; an upper bond pad element having a bottom surface; an insulating component disposed between the upper and lower bond pad elements; at least one opening through the insulating component, extending from the upper bond pad element to the lower bond pad element, and aligned with a peripheral region of the bottom bond pad element; and conductive material filling the at least one opening, and electrically connecting the upper bond pad element to the lower bond pad element; wherein the at least one opening is one string of vias extending around the peripheral region of the bottom bond pad element.

Claim 16

A semiconductor die, according to claim 9, wherein: each via measures one micron in cross-section.

Claim 17

A semiconductor die, according to claim 9, further comprising: a barrier metal layer beneath said lower bond pad.

Claim 18

A semiconductor die, according to claim 11, wherein: said barrier metal layer is selected from the group consisting of titanium, titanium nitride and titanium tungsten.