Semiconductor device

Abstract

Abstract PURPOSE:To reduce input capacitance by reducing the area of a polycrystalline silicon layer as compared with a bonding pad, forming said layer locally, and bringing said layer into contact only with a bonding pad. CONSTITUTION:A polycrystalline silicon layer 3a is locally formed only for a contact part 7, and its area is sufficiently small as compared with a bonding pad 5. In an insulating film 4, a hole 4a corresponding with the polycrystalline silicon layer 3a is opened, and the contact part 7 is formed by stretching a part of the aluminum pad 5 via the hole 4a. Thereby the minimum area of the polycrystalline silicon layer 3 can be realized.

Inventors

• 👤 Shuji Murakami
• 👤 修二 村上
• 👤 Kenji Anami
• 👤 穴見　健治

Bibliographic Details