Abstract A method for hydrogenating a thin film transistor, capable of making a sufficient amount of hydrogen penetrate a channel polysilicon of the thin film transistor, thereby reducing the amount of leakage current at a turn-off state of the thin film transistor while increasing the amount of drive current at a turn-on state of the thin film transistor so as to improve the characteristic of the thin film transistor. The method includes the steps of depositing an insulating film as a metal electrode protective film over a thin film transistor, which has been subjected to a patterning for forming metal electrodes, coating a silicon-on-glass film over the insulating film, and depositing another insulating film over the silicon-on-glass film so as to prevent hydrogen contained in the silicon-on-glass film from being externally leaked when the silicon-on-glass film is subsequently subjected to heat treatment.
A method for hydrogenating a thin film transistor by using a spin-on-glass film, comprising the steps of: depositing a first insulating film over a thin film transistor which has been subjected to a patterning for forming metal electrodes, said first insulating film serving as a protective film for said metal electrodes of the thin film transistor, and coating a spin-on-glass film over the first insulating film; depositing a second insulating film over said spin-on-glass film, said second insulating film serving to prevent hydrogen contained in the spin-on-glass film from bein externally leaked when the spin-on-glass film is subsequently subjected to heat treatment; heat treating the spin-on-glass film so that the hydrogen of the spin-on-glass film can permeate a channel polysilicon of the thin film transistor; and removing the second insulating film and the spin-on-glass film.
Claim 2
Independent Claim
135 words
A method for hydrogenating a thin film transistor by using a spin-on-glass film, comprising the steps of: depositing a first insulating film over a thin film transistor which has been subjected to a patterning for forming metal electrodes, said first insulating film serving as a protective film for said metal electrodes of the thin film transistor, and coating a spin-on-glass film over the first insulating film; depositing a second insulating film over said spin-on-glass film, said second insulating film serving to prevent hydrogen contained in the spin-on-glass film from bein externally leaked when the spin-on-glass film is subsequently subjected to heat treatment; heat treating the spin-on-glass film so that the hydrogen of the spin-on-glass film can permeate a channel polysilicon of the thin film transistor; and removing the second insulating film and the spin-on-glass film.