US5399519A
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Method of manufacturing semiconductor on insulator transistor with complementary transistor coupled to the channel
Assignee: Texas Instruments Inc
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Filing: 1993-06-14
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Granted: 1995-03-21
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Expires: 2013-06-14
Abstract
Abstract The described embodiments of the present invention provide a method and structure for actively controlling the voltage applied to the channel of field effect transistors. In the described embodiments, a transistor connected to the channel region is fabricated. The channel transistor has opposite conductivity type to the transistor using the main channel region. The source of the channel transistor is connected to the channel and the drain of the channel transistor is connected to a reference voltage. The same gate is used to control the channel transistor and the main transistor. When a voltage which causes the main transistor to be on is applied, the channel transistor is off, thus allowing the channel to float and allowing higher drive current. On the other hand, when a voltage to turn off the main transistor is applied, the channel transistor is turned on, thus clamping the channel region to the reference voltage. This allows for consistent threshold voltage control of the main transistor. In a preferred embodiment, the channel of the main transistor is used as the source of the channel transistor and the gate of the main transistor extends onto the channel region of the channel transistor. The reference voltage is then connected to the drain region which is formed on the opposite side of the channel transistor channel region from the main transistor's channel.
Inventors
- 👤 Mishel Matloubian
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 18:32
CPC Classifications
H; H10; H10D; H10D86/00; H10D86/201; H10D30/00; H10D30/01; H10D30/021; H10D30/031; H10D30/0312; H10D30/0314; H10D30/0321; H10D30/0323; H10D30/60; H10D30/67; H10D30/6729; H10D30/673; H10D30/6731; H10D30/674; H10D30/6741; H10D30/6743; H10D30/6744; H10D84/00; H10D84/80; H10D84/82; H10D84/83
Claims Analysis
Total Claims: 26
Claim 1
Independent Claim
137 words
A method for forming a semiconductor device comprising: providing a substrate having a first conductivity type; forming a first source region in said substrate, said source region having a second conductivity type; forming a first drain region in said substrate, said first drain region having said second conductivity type and said first drain region being spaced from said first source region defining a first channel region therebetween; forming a second channel region of said second conductivity type in said substrate and abutting said first channel region; forming a second drain region of said first conductivity type abutting said second channel region; and forming a gate formed adjacent to said first and second channel regions, said gate controlling current between said first source and first drain regions and between said second drain region and said first channel region.
Claim 2
Independent Claim
137 words
A method for forming a semiconductor device comprising: providing a substrate having a first conductivity type; forming a first source region in said substrate, said source region having a second conductivity type; forming a first drain region in said substrate, said first drain region having said second conductivity type and said first drain region being spaced from said first source region defining a first channel region therebetween; forming a second channel region of said second conductivity type in said substrate and abutting said first channel region; forming a second drain region of said first conductivity type abutting said second channel region; and forming a gate formed adjacent to said first and second channel regions, said gate controlling current between said first source and first drain regions and between said second drain region and said first channel region.
Claim 3
Dependent Claim
19 words
A method for forming a device as in claim 1 wherein said substrate is formed on an insulating layer.
Claim 4
Dependent Claim
24 words
A method for forming a device as in claim 2 wherein said substrate is electrically isolated from other components formed on said insulating layer.
Claim 5
Dependent Claim
17 words
A method for forming a device as in claim 3 wherein said substrate comprises a mesa structure.
Claim 6
Dependent Claim
16 words
A method for forming a device as in claim 1 wherein said substrate comprises crystalline silicon.
Claim 7
Dependent Claim
24 words
A method for forming a device as in claim 1 further comprising the step of connecting said second drain region to a reference potential.
Claim 8
Dependent Claim
30 words
A method for forming a device as in claim 1 further comprising the step of forming a dielectric layer interposed between said gate and said first and second channel regions.
Claim 9
Dependent Claim
16 words
The method of claim 1 wherein said second channel is disposed perpendicularly to said first channel.
Claim 10
Dependent Claim
20 words
The method of claim 1 wherein said step of forming a gate comprises the step of forming a T-shaped gate.
Claim 11
Dependent Claim
19 words
The method of claim 1 wherein said first conductivity type is P and said second conductivity type is N.
Claim 12
Independent Claim
211 words
A method of forming a transistor structure comprising the steps of: providing a semiconductor layer having a first conductivity type; forming a first drain region in said semiconductor layer, said first drain region having a second conductivity type; forming a first source region in said semiconductive layer, said first source region having said second conductivity type, said first source region being separated from said first drain region by a first channel region; forming a second channel region having said second conductivity type in said semiconductive layer abutting said first channel region, said second channel disposed substantially perpendicularly to said first channel region; forming a second drain region in said semiconductive layer, said second drain region having said first conductivity type, said second drain region being separated from said first channel region by said second channel region; and forming a T-shaped gate on the surface of said semiconductive layer over said first and second channel regions such that a first potential applied to said gate causes said first channel region to be conductive and said second channel region to be non conductive and such that a second potential applied to said gate causes said second channel region to be substantially conductive and to couple said first channel region to a reference potential.
Claim 13
Independent Claim
211 words
A method of forming a transistor structure comprising the steps of: providing a semiconductor layer having a first conductivity type; forming a first drain region in said semiconductor layer, said first drain region having a second conductivity type; forming a first source region in said semiconductive layer, said first source region having said second conductivity type, said first source region being separated from said first drain region by a first channel region; forming a second channel region having said second conductivity type in said semiconductive layer abutting said first channel region, said second channel disposed substantially perpendicularly to said first channel region; forming a second drain region in said semiconductive layer, said second drain region having said first conductivity type, said second drain region being separated from said first channel region by said second channel region; and forming a T-shaped gate on the surface of said semiconductive layer over said first and second channel regions such that a first potential applied to said gate causes said first channel region to be conductive and said second channel region to be non conductive and such that a second potential applied to said gate causes said second channel region to be substantially conductive and to couple said first channel region to a reference potential.
Claim 14
Dependent Claim
15 words
The method of claim 11 wherein said semiconductive layer is formed on an insulating layer.
Claim 15
Dependent Claim
12 words
The method of claim 12 wherein said insulating layer comprises silicon dioxide.
Claim 16
Dependent Claim
22 words
The method of claim 11 wherein said gate is separated from said first and second channel regions by a gate dielectric layer.
Claim 17
Dependent Claim
13 words
The method of claim 14 wherein said gate dielectric layer comprises silicon dioxide.
Claim 18
Independent Claim
239 words
A method for forming a transistor structure comprising the steps of: providing a semiconductive layer having a first conductivity type; forming a first drain region in said semiconductive layer, said first drain region having a second conductivity type; forming a first source region in said semiconductive layer, said first source region having said second conductivity type, said first source region being separated from said first drain region by a first channel region; forming a second source region in said semiconductive layer, said second source region having said first conductivity type and said second source region abutting said first channel region; forming a second channel region having said second conductivity type in said semiconductive layer abutting said second source region, said second channel region disposed perpendicularly to said first channel region; forming a second drain formed in said semiconductive layer, said second drain region having said first conductivity type, said second drain region being separated from said first channel region by said second channel region; and forming a T-shaped gate on the surface of said semiconductive layer over said first and second channel regions such that a first potential applied to said gate causes said first channel region to be conductive and said second channel region to be non conductive and such that a second potential applied to said gate causes said second channel region to be substantially conductive and to couple said first channel region to a reference potential.
Claim 19
Independent Claim
239 words
A method for forming a transistor structure comprising the steps of: providing a semiconductive layer having a first conductivity type; forming a first drain region in said semiconductive layer, said first drain region having a second conductivity type; forming a first source region in said semiconductive layer, said first source region having said second conductivity type, said first source region being separated from said first drain region by a first channel region; forming a second source region in said semiconductive layer, said second source region having said first conductivity type and said second source region abutting said first channel region; forming a second channel region having said second conductivity type in said semiconductive layer abutting said second source region, said second channel region disposed perpendicularly to said first channel region; forming a second drain formed in said semiconductive layer, said second drain region having said first conductivity type, said second drain region being separated from said first channel region by said second channel region; and forming a T-shaped gate on the surface of said semiconductive layer over said first and second channel regions such that a first potential applied to said gate causes said first channel region to be conductive and said second channel region to be non conductive and such that a second potential applied to said gate causes said second channel region to be substantially conductive and to couple said first channel region to a reference potential.
Claim 20
Dependent Claim
21 words
The method of claim 16 wherein said step of providing semiconductor layer comprises forming a semiconductor layer overlying an insulating layer.
Claim 21
Dependent Claim
11 words
The method of claim 17 wherein said semiconductor layer comprises silicon.
Claim 22
Dependent Claim
12 words
The method of claim 18 wherein said insulating layer comprises silicon dioxide.
Claim 23
Dependent Claim
22 words
The method of claim 16 wherein said gate is separated from said first and second channel regions by a gate dielectric layer.
Claim 24
Dependent Claim
13 words
The method of claim 20 wherein said gate dielectric layer comprises silicon dioxide.
Claim 25
Independent Claim
148 words
A method for forming a semiconductor device comprising: providing a substrate having a first conductivity type; forming a first source region in said substrate, said source region having a second conductivity type; forming a first drain region in said substrate, said first drain region having said second conductivity type and said first drain region being spaced from said first source region defining a first channel region therebetween; forming a second channel region of said second conductivity type in said substrate and abutting said first channel region said second channel disposed perpendicularly to said first channel region; forming a second drain region of said first conductivity type abutting said second channel region; and forming a T-shaped gate formed adjacent to said first and second channel regions, said gate controlling current between said first source and first drain regions and between said second drain region and said first channel region.
Claim 26
Independent Claim
148 words
A method for forming a semiconductor device comprising: providing a substrate having a first conductivity type; forming a first source region in said substrate, said source region having a second conductivity type; forming a first drain region in said substrate, said first drain region having said second conductivity type and said first drain region being spaced from said first source region defining a first channel region therebetween; forming a second channel region of said second conductivity type in said substrate and abutting said first channel region said second channel disposed perpendicularly to said first channel region; forming a second drain region of said first conductivity type abutting said second channel region; and forming a T-shaped gate formed adjacent to said first and second channel regions, said gate controlling current between said first source and first drain regions and between said second drain region and said first channel region.
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