InGaAsP/GaAs diode laser

Claim 1

A method for the preparation of a strained layer heterostructure for a diode laser by LP-MOCVD comprising the steps of: a) preparing a substrate; b) growing, in succession, the following layers on said substrate: 1) a first cladding layer doped with an doping agent consisting of silane or H 2 S; 2) a waveguide layer of Ga x In 1-x As y P 1-y where 0≦x≦1 and 0≦y≦1; 3) an undoped active layer of Ga x In 1-x As y P 1-y , where 0≦x≦1 and 0≦y≦1; 4) a waveguide layer of Ga x In 1-x As y P 1-y , where 0≦x≦1 and 0≦y≦1. 5) a second doped cladding layer, and c) controlling the thickness of said active layer and said waveguide layers to total between 5000 Å and 1 micron.

Claim 2

A method for the preparation of a strained layer heterostructure for a diode laser by LP-MOCVD comprising the steps of: a) preparing a substrate; b) growing, in succession, the following layers on said substrate: 1) a first cladding layer doped with an doping agent consisting of silane or H 2 S; 2) a waveguide layer of Ga x In 1-x As y P 1-y where 0≦x≦1 and 0≦y≦1; 3) an undoped active layer of Ga x In 1-x As y P 1-y , where 0≦x≦1 and 0≦y≦1; 4) a waveguide layer of Ga x In 1-x As y P 1-y , where 0≦x≦1 and 0≦y≦1. 5) a second doped cladding layer, and c) controlling the thickness of said active layer and said waveguide layers to total between 5000 Å and 1 micron.

Claim 4

A method for the preparation of a GaInAsP strained layer double heterostructure for use in a diode laser comprising the steps of; a) growing a first cladding layer; b) doping said first cladding layer with Si; c growing sequential layers of GaInAsP by metal organic chemical vapor deposition on a substrate, including an active layer between two waveguide layers; d controlling the growth of said active layer and said waveguide layers so that the combined thickness of said layers is between 7000 Å and 1 micron; e growing a second cladding layer; and f doping said second cladding layer with a p-type dopant to achieve a saturation of dopant on the surface of said second cladding layer.

Claim 5

A method for the preparation of a GaInAsP strained layer double heterostructure for use in a diode laser comprising the steps of; a) growing a first cladding layer; b) doping said first cladding layer with Si; c growing sequential layers of GaInAsP by metal organic chemical vapor deposition on a substrate, including an active layer between two waveguide layers; d controlling the growth of said active layer and said waveguide layers so that the combined thickness of said layers is between 7000 Å and 1 micron; e growing a second cladding layer; and f doping said second cladding layer with a p-type dopant to achieve a saturation of dopant on the surface of said second cladding layer.

Claim 8

A method for the preparation of a strained layer heterostructure for a diode laser by LP-MOCVD comprising the steps of: a) preparing a heated substrate; b) growing, in succession, the following layers on said substrate by the controlled flow of trimethyl indium, triethyl gallium, arsine, and phosphine to said heated substrate: 1) a first cladding layer doped with a doping agent consisting of silane or H 2 S; 2) a first waveguide layers of Ga x In 1-x As y P 1-y where 0≦x≦1 and 0≦y≦1; 3) an undoped active layer of a GaInAsP composition; 4) a second waveguide layer of Ga x In 1-x As y P 1-y where 0≦x≦1 and 0≦y≦1; and 5) a second cladding layer, and controlling steps b)2), b)3), and b)4) so that the total thickness of said layers is between 5000 Å and 1 micron; c) doping said second cladding layer by: 1) cooling said substrate and grown layers; 2) terminating the flow of said trimethyl indium, triethyl gallium, arsine, and phosphine; and 3) introducing to said second cladding layer diethyl zinc for a period of about 2-3 minutes.

Claim 9

A method for the preparation of a strained layer heterostructure for a diode laser by LP-MOCVD comprising the steps of: a) preparing a heated substrate; b) growing, in succession, the following layers on said substrate by the controlled flow of trimethyl indium, triethyl gallium, arsine, and phosphine to said heated substrate: 1) a first cladding layer doped with a doping agent consisting of silane or H 2 S; 2) a first waveguide layers of Ga x In 1-x As y P 1-y where 0≦x≦1 and 0≦y≦1; 3) an undoped active layer of a GaInAsP composition; 4) a second waveguide layer of Ga x In 1-x As y P 1-y where 0≦x≦1 and 0≦y≦1; and 5) a second cladding layer, and controlling steps b)2), b)3), and b)4) so that the total thickness of said layers is between 5000 Å and 1 micron; c) doping said second cladding layer by: 1) cooling said substrate and grown layers; 2) terminating the flow of said trimethyl indium, triethyl gallium, arsine, and phosphine; and 3) introducing to said second cladding layer diethyl zinc for a period of about 2-3 minutes.

Claim 11

A method for the preparation of a strained layer heterostructure for a diode laser by LP-MOCVD comprising the steps of: a) preparing a heated substrate; b) growing, in succession, the following layers on said substrate by the flow of trimethyl indium, triethyl gallium, arsine, and phosphine to said heated substrate: 1) a first cladding layer; 2) a first waveguide layer of Ga x In 1-x As y P 1-y where 0≦x≦1 and 0≦y≦1; 3) an undoped active layer of a GaInAsP composition; 4) a second waveguide layer similar to said first waveguide layer; 5) a doped cladding layer, and c) growing a cap layer of GaAs; d) doping said cap layers by cooling said substrate and grown layers; terminating the flow of said trimethyl indium, triethyl gallium, arsine, and phosphine; introducing to said cooling cladding layer a dopant selected from the group consisting of silane and H 2 S; and e) doping said cap layer with Zn to a level of about 10 20 atoms/cm 3 .

Claim 12

A method for the preparation of a strained layer heterostructure for a diode laser by LP-MOCVD comprising the steps of: a) preparing a heated substrate; b) growing, in succession, the following layers on said substrate by the flow of trimethyl indium, triethyl gallium, arsine, and phosphine to said heated substrate: 1) a first cladding layer; 2) a first waveguide layer of Ga x In 1-x As y P 1-y where 0≦x≦1 and 0≦y≦1; 3) an undoped active layer of a GaInAsP composition; 4) a second waveguide layer similar to said first waveguide layer; 5) a doped cladding layer, and c) growing a cap layer of GaAs; d) doping said cap layers by cooling said substrate and grown layers; terminating the flow of said trimethyl indium, triethyl gallium, arsine, and phosphine; introducing to said cooling cladding layer a dopant selected from the group consisting of silane and H 2 S; and e) doping said cap layer with Zn to a level of about 10 20 atoms/cm 3 .