US5173447A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method for producing strained quantum well semiconductor laser elements
Assignee: Furukawa Electric Co Ltd
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Filing: 1991-10-17
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Granted: 1992-12-22
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Expires: 2011-10-17
Abstract
Abstract A semiconductor laser element having a GaAs substrate formed thereon with an active layer of a strained quantum well construction provided with an InxGa1-xAs strained quantum well layer and a GaAs barrier layer, and clad layers arranged up and down said active layer through an epitaxial growth means. The lattice mismatching rate of the clad layer with respect to the substrate is less than 10-3.
Inventors
- 👤 Teturo Ijichi
- 👤 Hiroshi Okamoto
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-07 12:59
CPC Classifications
B; B82; B82Y; B82Y20/00; H; H01; H01S; H01S5/00; H01S5/30; H01S5/34; H01S5/343; H01S5/34313; H01S5/32; H01S5/20; H01S5/2054; H01S5/2081; H01S5/209; H01S5/22; H01S5/223; H01S5/2231; H01S5/3403; H01S5/3406
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
121 words
A method for the production of a semiconductor laser element having a GaAs substrate formed thereon with an active layer of a strained quantum well construction provided with an In x Ga 1-x As strained quantum well layer and a GaAs barrier layer, InGaP clad layers arranged up and down said active layer and a GaAs etching step layer inserted into said clad layer through an epitaxial growth means, the method comprising the steps of: etching a GaAs layer to an InGaP layer with an etching liquid containing hydrogen peroxide and any one of sulfuric acid, tartaric acid or ammonia, and etching an InGaP layer to a GaAs layer with an etching liquid containing hydrochloric acid but not containing hydrogen peroxide.
Claim 2
Independent Claim
121 words
A method for the production of a semiconductor laser element having a GaAs substrate formed thereon with an active layer of a strained quantum well construction provided with an In x Ga 1-x As strained quantum well layer and a GaAs barrier layer, InGaP clad layers arranged up and down said active layer and a GaAs etching step layer inserted into said clad layer through an epitaxial growth means, the method comprising the steps of: etching a GaAs layer to an InGaP layer with an etching liquid containing hydrogen peroxide and any one of sulfuric acid, tartaric acid or ammonia, and etching an InGaP layer to a GaAs layer with an etching liquid containing hydrochloric acid but not containing hydrogen peroxide.
References Cited (Backward Citations)
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| 3.5 Years (Year 4) | 1995-12-22 | 1996-06-22 | 1996-12-22 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1999-12-22 | 2000-06-22 | 2000-12-22 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2003-12-22 | 2004-06-22 | 2004-12-22 | $7700.00 | Window Closed / Lapsed |