Abstract A semiconductor laser formed on an InP substrate to have a hetero structure comprising a plurality of In 1-x Ga x`As y P 1-y (0.42y≦x≦0.5y,0≦y≦1) layers which are lattice-matched with InP, in which a light emitting layer included in the layers and having a forbidden band width larger than 0.6 eV but smaller than 0.9 eV at room temperature is sandwiched between two InP layers on the InP substrate, and in which there is provided between the light emitting layer and the InP layer grown thereon at least one buffer layer having a forbidden band width larger than the forbidden band width of the light emitting layer but smaller than the forbidden band width of InP. The forbidden band width of the buffer layer at room temperature may be larger than 0.8 eV but smaller than 1.0 eV.
In a semiconductor laser formed on an InP substrate having a hetero structure comprising a plurality of In 1-x Ga x As y P 1-y (0.42y≦x≦0.5y, 0≦y≦1) layers which are lattice-matched with InP, said semiconductor laser having carrier injecting electrodes and resonant cavity means formed by a light emitting layer included in said plurality of In 1-x Ga x As y P 1-y layers, the improvement comprising said layers comprising the light emitting layer having a forbidden band width larger than 0.6 eV but smaller than 0.9 eV at room temperature and sandwiched between two InP layers on the InP substrate, and said layers including a buffer layer having a forbidden band width larger than the forbidden band width of the light emitting layer but smaller than the forbidden band width of InP and disposed between the light emitting layer and the InP layer grown thereon.
Claim 2
Dependent Claim
146 words
In a semiconductor laser formed on an InP substrate having a hetero structure comprising a plurality of In 1-x Ga x As y P 1-y (0.42y≦x≦0.5y, 0≦y≦1) layers which are lattice-matched with InP, said semiconductor laser having carrier injecting electrodes and resonant cavity means formed by a light emitting layer included in said plurality of In 1-x Ga x As y P 1-y layers, the improvement comprising said layers comprising the light emitting layer having a forbidden band width larger than 0.6 eV but smaller than 0.9 eV at room temperature and sandwiched between two InP layers on the InP substrate, and said layers including a buffer layer having a forbidden band width larger than the forbidden band width of the light emitting layer but smaller than the forbidden band width of InP and disposed between the light emitting layer and the InP layer grown thereon.
Claim 3
Dependent Claim
29 words
A semiconductor laser according to claim 1, wherein the forbidden band width of the buffer layer at room temperature is larger than 0.8 eV but smaller than 1.0 eV.