US4479222A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Diffusion barrier for long wavelength laser diodes
Assignee: RCA Corp
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Filing: 1982-04-27
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Granted: 1984-10-23
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Expires: 2002-04-27
Abstract
Abstract A diffusion barrier is created in a n-type heterojunction layer adjacent to the active region of a semiconductor laser by doping the n-type layer with a periodic table group VI element. The diffusion barrier in the n-type layer prevents the migration of acceptors into that layer. The group VI elements are, in particular, sulfur (S), selinium (Se), and tellurium (Te). The acceptor of concern is zinc (Zn).
Inventors
- 👤 Frank Z. Hawrylo
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 21:40
CPC Classifications
H; H01; H01S; H01S5/00; H01S5/30; H01S5/305; H10; H10P; H10P14/00; H10P14/20; H10P14/26; H10P14/263; H10P14/265; H10P14/29; H10P14/2901; H10P14/2907; H10P14/2909; H10P14/34; H10P14/3402; H10P14/3414; H10P14/3418; H10P14/3438; H10P14/3441; H10P14/3442; H10P14/3444; Y; Y10; Y10S; Y10S438/00; Y10S438/914; Y10S438/916
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
146 words
In an improved semiconductor laser diode in which a plurality of layers of semiconductor material are deposited by liquid phase epitaxy on a substrate to form an active lasing layer having heterojunction layers on each side thereof, the improvement comprising: a first heterojunction layer having an n-type dopant therein to form a diffusion barrier, said first heterojunction layer being deposited on one side of said active lasing layer, said n-type dopant selected from the group consisting of sulfur, selenium and tellurium, the concentration of said n-type dopant being mid 10 19 atoms per cubic centimeter; and a second heterojunction layer having a p-type dopant therein, the concentration of said n-type dopant exceeding the concentration of said p-type dopant so that said p-type dopant does not diffuse into said first heterojunction layer, said second heterojunction layer being deposited on the other side of said active lasing layer.
Claim 2
Dependent Claim
146 words
In an improved semiconductor laser diode in which a plurality of layers of semiconductor material are deposited by liquid phase epitaxy on a substrate to form an active lasing layer having heterojunction layers on each side thereof, the improvement comprising: a first heterojunction layer having an n-type dopant therein to form a diffusion barrier, said first heterojunction layer being deposited on one side of said active lasing layer, said n-type dopant selected from the group consisting of sulfur, selenium and tellurium, the concentration of said n-type dopant being mid 10 19 atoms per cubic centimeter; and a second heterojunction layer having a p-type dopant therein, the concentration of said n-type dopant exceeding the concentration of said p-type dopant so that said p-type dopant does not diffuse into said first heterojunction layer, said second heterojunction layer being deposited on the other side of said active lasing layer.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1987-10-23 | 1988-04-23 | 1988-10-23 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1991-10-23 | 1992-04-23 | 1992-10-23 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1995-10-23 | 1996-04-23 | 1996-10-23 | $7700.00 | Window Closed / Lapsed |