US5222090A
Expired / Lapsed
US
⏱️ 0.0 years remaining
700-850 nanometer semiconductor diode laser
Assignee: University of Missouri System
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Filing: 1992-03-05
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Granted: 1993-06-22
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Expires: 2012-03-05
Abstract
Abstract Disclosed herein is a semiconductor laser device comprised of a semiconductor substrate having deposited thereon at least one quantum well active region comprised of an alloy of the group consisting of GaInAsP and AlGaInAs sandwiched between upper and lower confinement layers of AlGaInAsP alloy. The laser device is further comprised of AlGaInP cladding layers.
Inventors
- 👤 Harvey B. Serreze
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-07 12:59
CPC Classifications
B; B82; B82Y; B82Y20/00; H; H01; H01S; H01S5/00; H01S5/30; H01S5/34; H01S5/343; H01S5/32; H01S5/3211; H01S5/34306; H01S5/34313; H01S5/3434
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
127 words
A semiconductor laser device, comprising: (a) a substrate; (b) at least one quantum well active region comprised of an alloy of the group consisting of GaInAsP and AlGaInAs sandwiched between first and second confinement layers deposited upon a first and second surface of said quantum well active region, respectively, both said confinement layers comprised of an AlGaInAsP alloy; (c) an n-type cladding layer deposited upon said first confinement layer, said n-type cladding layer comprised of an AlGaInP alloy; (d) a p-type cladding layer deposited upon said second confinement layer, said p-type cladding layer comprised of an AlGaInP alloy; and (e) a p-type cap layer and metalization and n-type buffer layer and metalization deposited upon the p-type and n-type cladding layers respectively for applying an electric voltage thereto.
Claim 2
Dependent Claim
127 words
A semiconductor laser device, comprising: (a) a substrate; (b) at least one quantum well active region comprised of an alloy of the group consisting of GaInAsP and AlGaInAs sandwiched between first and second confinement layers deposited upon a first and second surface of said quantum well active region, respectively, both said confinement layers comprised of an AlGaInAsP alloy; (c) an n-type cladding layer deposited upon said first confinement layer, said n-type cladding layer comprised of an AlGaInP alloy; (d) a p-type cladding layer deposited upon said second confinement layer, said p-type cladding layer comprised of an AlGaInP alloy; and (e) a p-type cap layer and metalization and n-type buffer layer and metalization deposited upon the p-type and n-type cladding layers respectively for applying an electric voltage thereto.
Claim 3
Dependent Claim
39 words
A semiconductor laser device, as recited in claim 1, wherein said first and second confinement layers, said n-type cladding layer, and said p-type cladding layer each have a lattice constant substantially equal to the lattice constant of said substrate.
Claim 4
Dependent Claim
49 words
A semiconductor laser device, as recited in claim 2, wherein each of said n-type and p-type cladding layers are comprised of a compound selected from the group consisting of (Al 0 .8 Ga 0 .2) 0 .5 In 0 .5 P and Al 0 .5 In 0 .5 P.
Claim 5
Dependent Claim
25 words
A semiconductor laser device, as recited in claim 2, wherein said quantum well active region is comprised of Ga 0 .5 In 0 .5 AsP.
Claim 6
Dependent Claim
41 words
A semiconductor laser device, as recited in claim 4, wherein said first and second confinement layers are comprised of a compound selected from the group consisting of (Al 0 .2 Ga 0 .8) 0 .5 In 0 .5 P and GaInP.
Claim 7
Dependent Claim
19 words
A semiconductor laser device, as recited in claim 2, wherein said quantum well active region is comprised of AlGaInAs.
Claim 8
Dependent Claim
31 words
A semiconductor laser device, as recited in claim 6, wherein said first and second confinement layers are comprised of (Al 0 .2 Ga 0 .8) 0 .5 In 0 .5 P.
Claim 9
Dependent Claim
37 words
A semiconductor laser device, as recited in claim 2, wherein said first and second confinement layers are comprised of (Al x Ga 1-x ) 0 .5 In 0 .5 P wherein x varies from 0 to 1.0.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1996-06-21 | 1996-12-21 | 1997-06-22 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2000-06-21 | 2000-12-21 | 2001-06-22 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2004-06-21 | 2004-12-21 | 2005-06-22 | $7700.00 | Window Closed / Lapsed |