Semiconductor light emitting element

Abstract

Abstract PURPOSE:To reduce a threshold current, resistance, generated heat and the driving current of an element by providing a semiconductor layer containing at least Al>=zGa1-zAs layer between a second clad layer and a contact layer. CONSTITUTION:In a semiconductor light emitting element having a first clad layer 21 made of (AlyGa1-y)xIn1-xP mixed crystal (0<=x<=1, 0<=y<=1), an active layer 22, a second clad layer 23 made of (AlyGa1-x)xIn1-xP mixed crystal (0<=x<=1, 0<=y<=1), and a contact layer 25 sequentially formed on a semiconduc tor substrate 10, one or more semiconductor layers, each containing at least AlzGa1-zAs layer 24 (0<=z<=1) are provided between the layer 23 and the layer 25.

Inventors

• 👤 Masahiro Hosoda
• 👤 昌宏 細田
• 👤 Hisahoshi Takahashi
• 👤 向星 高橋
• 👤 Atsutoshi Tsunoda
• 👤 篤勇 角田
• 👤 Yasuo Suga
• 👤 康夫 菅
• 👤 Naohiro Suyama
• 👤 尚宏 須山
• 👤 Kaneki Matsui
• 👤 完益 松井

Bibliographic Details