Hybrid integrated circuit apparatus

Claim 2

A hybrid integrated circuit apparatus, comprising: a sintered substrate having a circuit portion formed on a surface thereof; porous conductive material layers formed on said surface of said substrate, each said layer being connected to said circuit portion, said porous conductive material layers being formed of a conductive material having a melting point higher than a sintering temperature of said substrate, said porous conductive material layers covering portions of said sintered substrate; plated layers made of copper and formed directly on a surface of said porous conductive material layers, said plated layers having a thickness in the range of from 2 to 4 μm and covering said surface of said porous conductive material layer to thereby prevent exposure of said surface, wherein particles of copper enter said porous conductive layer, and said plated layers extend to the surface of said sintered substrate; and conductor layers formed on said copper-plated layers to serve as connecting terminals for circuit elements.

Claim 3

An apparatus according to claim 1, wherein said substrate is constituted by a multilayer substrate obtained by laminating a plurality of sheet substrates.

Claim 4

An apparatus according to claim 1, wherein said substrate is constituted by a single multilayer substrate, obtained by laminating a plurality of ceramic green sheets which contain an alumina ceramic as its major constituent, said ceramic green sheets being formed such that conductive layers constituted by the porous conductive material having the melting point higher than the sintering temperature of said substrate are respectively formed on the surfaces thereof.

Claim 5

An apparatus according to claim 1, wherein said substrate is constituted by a single multilayer substrate, obtained by laminating and sintering a plurality of sheet substrates which contain an alumina ceramic as its major constituent, said sheet substrate being formed such that conductive layers constituted by the porous conductive material layer having the melting point higher than the sintering temperature of said substrate are respectively formed on the surfaces thereof.

Claim 6

An apparatus according to claim 1, wherein said copper-plated layers are so formed as to cover the entire porous conductive material layers.

Claim 7

An apparatus according to claim 1, wherein said copper-plated layers are so formed as to cover portions of said porous conductive material layers.

Claim 8

An apparatus according to claim 1, wherein said conductor layers are constituted by thick film conductor layers formed on at least portions of said copper-plated layers, said thick film conductor layers forming patterns extending to positions where circuit elements are connected.

Claim 9

An apparatus according to claim 1, wherein said conductor layers are constituted by thick film copper conductor layers printed on at least portions of said copper-plated layers and baked in a nitrogen atmosphere.

Claim 10

A hybrid integrated circuit apparatus comprising: a sintered substrate having a wiring layer thereon, said wiring layer being formed on the sintered substrate by printing a porous conductive material thereon; a plated layer made of copper and formed directly on at least a portion of said porous conductive material, said plated layer having a thickness of 2 to 4 μm and being constituted by copper particles some of which diffuse into pores of the porous conductive material during formation of the plated layer; and a conductive layer formed directly over the plated layer and constituting a terminal of a circuit element to be arranged on the substrate, said conductive layer being bonded to the porous conductive material via said plated layer as a result of said plated layer being exposed to heat after said conductive layer is formed thereon, said conductive layer being formed so as to cover an upper surfacer and side surfaces of said plated layer and to extend to the surface of said substrate.

Claim 11

A hybrid integrated circuit apparatus comprising: a sintered substrate having a wiring layer thereon, said wiring layer being formed on the sintered substrate by printing a porous conductive material thereon; a plated layer made of copper and formed directly on at least a portion of said porous conductive material, said plated layer having a thickness of 2 to 4 μm and being constituted by copper particles some of which diffuse into pores of the porous conductive material during formation of the plated layer; and a conductive layer formed directly over the plated layer and constituting a terminal of a circuit element to be arranged on the substrate, said conductive layer being bonded to the porous conductive material via said plated layer as a result of said plated layer being exposed to heat after said conductive layer is formed thereon, said conductive layer being formed so as to cover an upper surfacer and side surfaces of said plated layer and to extend to the surface of said substrate.

Claim 12

An apparatus according to claim 9, wherein said conductive layer is made of a material containing copper and glass, and constitutes a thick sintered conductor.

Claim 13

An apparatus according to claim 9, wherein said conductive layer is formed such that side surfaces of said conductive material layer are covered by said conductive layer.

Claim 14

An apparatus according to claim 9, further comprising a solder layer formed on the porous conductive layer to allow circuit elements to be mounted on the sintered substrate.

Claim 15

A hybrid integrated circuit apparatus comprising: a sintered substrate having a wiring layer thereon, said wiring layer being formed on the sintered substrate by printing a porous conductive material; a plated layer made of copper and formed directly on at least a portion of said porous conductive material, said plated layer having a thickness of 2 to 4 μm and being constituted by small copper particles some of which diffuse into pores of the porous conductive material during formation of the plated layer; and a conductive layer formed directly over the plated layer and constituting a terminal of a circuit element to be arranged on the substrate, said conductive layer being bonded to the porous conductive material via said plated layer, the bonding of said conductive layer to the porous conductive material being caused by the formation of said conductive layer onto said plated layer in a manner such that the small copper particles previously diffused into said pores of said porous conductive material are permitted to become larger in size, resulting in increased bonding strength and lower contact resistance between said conductive layer and said porous conductive material, said conductive layer being formed so as to cover an upper surface and side surfaces of said plated layer and to extend to the surface of said substrate.

Claim 16

A hybrid integrated circuit apparatus comprising: a sintered substrate having a wiring layer thereon, said wiring layer being formed on the sintered substrate by printing a porous conductive material; a plated layer made of copper and formed directly on at least a portion of said porous conductive material, said plated layer having a thickness of 2 to 4 μm and being constituted by small copper particles some of which diffuse into pores of the porous conductive material during formation of the plated layer; and a conductive layer formed directly over the plated layer and constituting a terminal of a circuit element to be arranged on the substrate, said conductive layer being bonded to the porous conductive material via said plated layer, the bonding of said conductive layer to the porous conductive material being caused by the formation of said conductive layer onto said plated layer in a manner such that the small copper particles previously diffused into said pores of said porous conductive material are permitted to become larger in size, resulting in increased bonding strength and lower contact resistance between said conductive layer and said porous conductive material, said conductive layer being formed so as to cover an upper surface and side surfaces of said plated layer and to extend to the surface of said substrate.

Claim 17

An apparatus according to claim 13, wherein said conductive layer is formed such that side surfaces of said conductive material layer are covered by said conductive layer.

Claim 18

An apparatus according to claim 13, further comprising a solder layer formed on the porous conductive layer to allow circuit elements to be mounted on the sintered substrate.