Method for selective removal of organometallic and organosilicon residues and damaged oxides using anhydrous ammonium fluoride solution

Claim 1

A method for selectively removing organometallic residues, organosilicon residues, native silicon oxides, or damaged silicon oxides created in processing a semiconductor substrate from said semiconductor substrate, comprising contacting said semiconductor substrate with an etching solution for a time sufficient to remove said organometallic residues, organosilicon residues, native silicon oxides, or damaged silicon oxides from said semiconductor substrate, wherein (a) said etching solution comprises an anhydrous ammonium fluoride salt dissolved in a polyhydric alcohol, said anhydrous ammonium fluoride salt selected from the group consisting of anhydrous ammonium fluoride and anhydrous ammonium bifluoride and mixtures thereof, and (b) said etching solution contains less than about 4% by weight water and is free of added hydrogen fluoride.

Claim 2

A method for selectively removing organometallic residues, organosilicon residues, native silicon oxides, or damaged silicon oxides created in processing a semiconductor substrate from said semiconductor substrate, comprising contacting said semiconductor substrate with an etching solution for a time sufficient to remove said organometallic residues, organosilicon residues, native silicon oxides, or damaged silicon oxides from said semiconductor substrate, wherein (a) said etching solution comprises an anhydrous ammonium fluoride salt dissolved in a polyhydric alcohol, said anhydrous ammonium fluoride salt selected from the group consisting of anhydrous ammonium fluoride and anhydrous ammonium bifluoride and mixtures thereof, and (b) said etching solution contains less than about 4% by weight water and is free of added hydrogen fluoride.